JP7120540B2 - イオン照射装置、イオン照射方法、成膜装置、及び成膜方法 - Google Patents

イオン照射装置、イオン照射方法、成膜装置、及び成膜方法 Download PDF

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JP7120540B2
JP7120540B2 JP2018121004A JP2018121004A JP7120540B2 JP 7120540 B2 JP7120540 B2 JP 7120540B2 JP 2018121004 A JP2018121004 A JP 2018121004A JP 2018121004 A JP2018121004 A JP 2018121004A JP 7120540 B2 JP7120540 B2 JP 7120540B2
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film
nitride
ion irradiation
forming
plasma
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JP2020002400A5 (enExample
JP2020002400A (ja
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尚久 北見
淳一 野本
俊之 酒見
哲也 山本
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Sumitomo Heavy Industries Ltd
Kochi Prefectural PUC
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Sumitomo Heavy Industries Ltd
Kochi Prefectural PUC
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JP2018121004A 2018-06-26 2018-06-26 イオン照射装置、イオン照射方法、成膜装置、及び成膜方法 Active JP7120540B2 (ja)

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JP2018121004A JP7120540B2 (ja) 2018-06-26 2018-06-26 イオン照射装置、イオン照射方法、成膜装置、及び成膜方法

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JP2020002400A5 JP2020002400A5 (enExample) 2021-06-17
JP7120540B2 true JP7120540B2 (ja) 2022-08-17

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000087227A (ja) 1998-09-15 2000-03-28 Japan Science & Technology Corp 窒素化合物ガスクラスターイオンビームによる窒化物 もしくは窒化表面の形成方法
JP2017025407A (ja) 2015-07-21 2017-02-02 住友重機械工業株式会社 成膜装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0784640B2 (ja) * 1987-12-11 1995-09-13 理化学研究所 結晶性窒化アルミニウムの製造方法
JPH07221018A (ja) * 1994-01-31 1995-08-18 Sanyo Electric Co Ltd 窒化化合物半導体の形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000087227A (ja) 1998-09-15 2000-03-28 Japan Science & Technology Corp 窒素化合物ガスクラスターイオンビームによる窒化物 もしくは窒化表面の形成方法
JP2017025407A (ja) 2015-07-21 2017-02-02 住友重機械工業株式会社 成膜装置

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