JP2020002400A5 - - Google Patents
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- Publication number
- JP2020002400A5 JP2020002400A5 JP2018121004A JP2018121004A JP2020002400A5 JP 2020002400 A5 JP2020002400 A5 JP 2020002400A5 JP 2018121004 A JP2018121004 A JP 2018121004A JP 2018121004 A JP2018121004 A JP 2018121004A JP 2020002400 A5 JP2020002400 A5 JP 2020002400A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- nitride
- ions
- forming material
- ion irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- -1 nitride ion Chemical class 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims 5
- 230000001678 irradiating effect Effects 0.000 claims 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018121004A JP7120540B2 (ja) | 2018-06-26 | 2018-06-26 | イオン照射装置、イオン照射方法、成膜装置、及び成膜方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018121004A JP7120540B2 (ja) | 2018-06-26 | 2018-06-26 | イオン照射装置、イオン照射方法、成膜装置、及び成膜方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020002400A JP2020002400A (ja) | 2020-01-09 |
| JP2020002400A5 true JP2020002400A5 (enExample) | 2021-06-17 |
| JP7120540B2 JP7120540B2 (ja) | 2022-08-17 |
Family
ID=69098860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018121004A Active JP7120540B2 (ja) | 2018-06-26 | 2018-06-26 | イオン照射装置、イオン照射方法、成膜装置、及び成膜方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7120540B2 (enExample) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0784640B2 (ja) * | 1987-12-11 | 1995-09-13 | 理化学研究所 | 結晶性窒化アルミニウムの製造方法 |
| JPH07221018A (ja) * | 1994-01-31 | 1995-08-18 | Sanyo Electric Co Ltd | 窒化化合物半導体の形成方法 |
| JP3865513B2 (ja) | 1998-09-15 | 2007-01-10 | 独立行政法人科学技術振興機構 | 窒素化合物ガスクラスターイオンビームによる窒化物 もしくは窒化表面の形成方法 |
| JP6584982B2 (ja) | 2015-07-21 | 2019-10-02 | 住友重機械工業株式会社 | 成膜装置 |
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2018
- 2018-06-26 JP JP2018121004A patent/JP7120540B2/ja active Active