JP2020061534A5 - - Google Patents

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Publication number
JP2020061534A5
JP2020061534A5 JP2018193752A JP2018193752A JP2020061534A5 JP 2020061534 A5 JP2020061534 A5 JP 2020061534A5 JP 2018193752 A JP2018193752 A JP 2018193752A JP 2018193752 A JP2018193752 A JP 2018193752A JP 2020061534 A5 JP2020061534 A5 JP 2020061534A5
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JP
Japan
Prior art keywords
frequency power
period
voltage output
plasma processing
plasma treatment
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JP2018193752A
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English (en)
Japanese (ja)
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JP7101096B2 (ja
JP2020061534A (ja
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Priority claimed from JP2018193752A external-priority patent/JP7101096B2/ja
Priority to JP2018193752A priority Critical patent/JP7101096B2/ja
Priority to TW108135619A priority patent/TWI828773B/zh
Priority to KR1020190123868A priority patent/KR102797229B1/ko
Priority to CN202411208809.3A priority patent/CN119092391A/zh
Priority to CN201910958296.0A priority patent/CN111048389B/zh
Priority to US16/599,952 priority patent/US11282701B2/en
Publication of JP2020061534A publication Critical patent/JP2020061534A/ja
Publication of JP2020061534A5 publication Critical patent/JP2020061534A5/ja
Publication of JP7101096B2 publication Critical patent/JP7101096B2/ja
Application granted granted Critical
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JP2018193752A 2018-10-12 2018-10-12 プラズマ処理方法及びプラズマ処理装置 Active JP7101096B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018193752A JP7101096B2 (ja) 2018-10-12 2018-10-12 プラズマ処理方法及びプラズマ処理装置
TW108135619A TWI828773B (zh) 2018-10-12 2019-10-02 電漿處理方法及電漿處理裝置
KR1020190123868A KR102797229B1 (ko) 2018-10-12 2019-10-07 플라즈마 처리 방법 및 플라즈마 처리 장치
CN201910958296.0A CN111048389B (zh) 2018-10-12 2019-10-10 等离子体处理方法和等离子体处理装置
CN202411208809.3A CN119092391A (zh) 2018-10-12 2019-10-10 等离子体处理装置
US16/599,952 US11282701B2 (en) 2018-10-12 2019-10-11 Plasma processing method and plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018193752A JP7101096B2 (ja) 2018-10-12 2018-10-12 プラズマ処理方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2020061534A JP2020061534A (ja) 2020-04-16
JP2020061534A5 true JP2020061534A5 (enExample) 2021-07-26
JP7101096B2 JP7101096B2 (ja) 2022-07-14

Family

ID=70160685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018193752A Active JP7101096B2 (ja) 2018-10-12 2018-10-12 プラズマ処理方法及びプラズマ処理装置

Country Status (5)

Country Link
US (1) US11282701B2 (enExample)
JP (1) JP7101096B2 (enExample)
KR (1) KR102797229B1 (enExample)
CN (2) CN111048389B (enExample)
TW (1) TWI828773B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6846387B2 (ja) 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7434669B2 (ja) * 2021-06-21 2024-02-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
WO2023238740A1 (ja) * 2022-06-08 2023-12-14 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3210469B2 (ja) 1993-03-12 2001-09-17 株式会社日立製作所 半導体集積回路装置の製造方法
JP2000269198A (ja) * 1999-03-19 2000-09-29 Toshiba Corp プラズマ処理方法及びプラズマ処理装置
JP4408423B2 (ja) 2005-03-25 2010-02-03 シャープ株式会社 トナー濃度センサの校正方法および現像システム
JP5395491B2 (ja) * 2009-03-31 2014-01-22 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR102247560B1 (ko) * 2014-07-14 2021-05-03 삼성전자 주식회사 Rps에서의 플라즈마 생성방법, 및 그 플라즈마 생성방법을 포함한 반도체 소자 제조방법
JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
JP6410592B2 (ja) * 2014-12-18 2018-10-24 東京エレクトロン株式会社 プラズマエッチング方法
JP6424120B2 (ja) * 2015-03-23 2018-11-14 東京エレクトロン株式会社 電源システム、プラズマ処理装置及び電源制御方法
US10090162B2 (en) * 2016-01-18 2018-10-02 Hitachi High-Technologies Corporation Plasma processing method and plasma processing device
JP6667343B2 (ja) * 2016-03-30 2020-03-18 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP6689674B2 (ja) * 2016-05-30 2020-04-28 東京エレクトロン株式会社 エッチング方法

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