JP2020061534A - プラズマ処理方法及びプラズマ処理装置 - Google Patents
プラズマ処理方法及びプラズマ処理装置 Download PDFInfo
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
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- 239000004020 conductor Substances 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000013626 chemical specie Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 238000010586 diagram Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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Abstract
Description
Claims (8)
- 第1の期間においてチャンバ内で第1のプラズマ処理を実行する工程と、
前記第1の期間の後の又は該第1の期間に続く第2の期間において前記チャンバ内で第2のプラズマ処理を実行する工程と、
を含み、
第1のプラズマ処理を実行する前記工程と第2のプラズマ処理を実行する前記工程は、前記チャンバ内に設けられた基板支持台上に基板が載置された状態で実行され、
第1のプラズマ処理を実行する前記工程と第2のプラズマ処理を実行する前記工程とを含むシーケンスが複数回実行され、
前記第2の期間内で、第1の周波数を有する第1の高周波電力が、前記基板支持台の下部電極に供給され、
前記第1の期間内で、前記下部電極に対する前記第1の高周波電力の供給が停止され、
前記第1の周波数よりも高い第2の周波数を有するプラズマ生成用の第2の高周波電力が、前記第2の期間内の前記第1の高周波電力の各周期内において、パルス状の高周波電力として供給され、
前記第2の高周波電力は、前記第1の期間内において連続的に供給されるか、或いは、パルス状の高周波電力として供給される、
プラズマ処理方法。 - 前記第2の高周波電力は、前記第2の期間内の前記第1の高周波電力の各周期内で第1の高周波電源部から出力される前記第1の高周波電力が負の電位を有する期間内で、前記パルス状の高周波電力として供給される、請求項1に記載のプラズマ処理方法。
- 前記第2の高周波電力は、前記第2の期間内の前記第1の高周波電力の各周期内で第1の高周波電源部から出力される前記第1の高周波電力が正の電位を有する期間内で、前記パルス状の高周波電力として供給される、請求項1に記載のプラズマ処理方法。
- 前記第2の高周波電力は、前記第2の期間内で前記パルス状の高周波電力が供給される周期と同じ周期で、前記第1の期間内において、前記パルス状の高周波電力として供給される、請求項2又は3に記載のプラズマ処理方法。
- 前記第1の高周波電力及び前記第2の高周波電力の供給を停止した状態で、前記チャンバを排気する工程を更に含み、
前記チャンバを排気する前記工程は、前記シーケンス内で第2のプラズマ処理を実行する前記工程が実行された後に、実行される、
請求項1〜4の何れか一項に記載のプラズマ処理方法。 - 前記第1のプラズマ処理に用いられる処理ガスと前記第2のプラズマ処理に用いられる処理ガスは同一である、請求項1〜5の何れか一項に記載のプラズマ処理方法。
- 前記第1のプラズマ処理に用いられる処理ガスと前記第2のプラズマ処理に用いられる処理ガスは互いに異なる、請求項1〜5の何れか一項に記載のプラズマ処理方法。
- チャンバと、
下部電極を含み、前記チャンバ内に設けられた基板支持台と、
第1の周波数を有する第1の高周波電力を前記下部電極に供給するように構成された第1の高周波電源部と、
プラズマを生成するために第1の周波数よりも高い第2の周波数を有する第2の高周波電力を供給するように構成された第2の高周波電源部と、
前記第1の高周波電源部及び前記第2の高周波電源部を制御するように構成された制御部と、
を備え、
前記制御部は、第1の期間において前記チャンバ内で第1のプラズマ処理を実行するための第1の制御と、前記第1の期間の後の又は該第1の期間に続く第2の期間において前記チャンバ内で第2のプラズマ処理を実行するための第2の制御と、を含む制御シーケンスを繰り返して実行し、
前記第1の制御は、
前記第1の期間において、前記下部電極に対する前記第1の高周波電力の供給を停止するよう、第1の高周波電源部を制御すること、及び、
前記第1の期間内において、前記第2の高周波電力を、連続的に供給するか、或いは、パルス状の高周波電力として供給するよう、前記第2の高周波電源部を制御すること、
を含み、
前記第2の制御は、
前記第2の期間において、前記第1の高周波電力を前記下部電極に供給するよう、前記第1の高周波電源部を制御すること、及び、
前記第2の期間内の前記第1の高周波電力の各周期内において、前記第2の高周波電力を、パルス状の高周波電力として供給するよう、前記第2の高周波電源部を制御すること、
を含む、
プラズマ処理装置。
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