JP2020002400A5

JP2020002400A5 -

Info

Publication number: JP2020002400A5
Application number: JP2018121004A
Authority: JP
Filing date: 2018-06-26
Publication date: 2021-06-17
Anticipated expiration: 2038-06-26

Description

続いて、窒化物イオン照射部２４の構成について詳細に説明する。窒化物イオン照射部２４は、プラズマガン７と、窒化物ガス供給部４０と、制御部５０と、回路部３４とを有している。なお、制御部５０及び回路部３４に含まれる一部の機能は、前述の成膜部１４にも属する。窒化物イオン照射部２４は、窒化物イオンを生成する。また、窒化物イオン照射部２４は、生成した窒化物イオンをＡｌＮ基板１５０に照射する（図４参照）。窒化物イオン照射部２４は、窒化物イオンとして、負イオンを生成する。窒化物イオンとして、水素の窒化物イオン（ＮＨ_２ ⁻）が挙げられる。なお、窒化物イオン照射部２４は、例えば、Ｎ^＋、Ｎ_２ ^＋などの窒素の陽イオンを生成してもよい。 Subsequently, the configuration of the nitride ion irradiation unit 24 will be described in detail. The nitride ion irradiation unit 24 includes a plasma gun 7, a nitride gas supply unit 40, a control unit 50, and a circuit unit 34. Some functions included in the control unit 50 and the circuit unit 34 also belong to the film forming unit 14 described above. The nitride ion irradiation unit 24 generates nitride ions. Further, the nitride ion irradiation unit 24 irradiates the AlN substrate 150 with the generated nitride ions (see FIG. 4). The nitride ion irradiation unit 24 generates negative ions as nitride ions. As a nitride ion, a nitride ion hydrogen (NH ₂ ^-) and the like. Incidentally, nitride ion irradiation unit 24 is, for ^example, N _+, and may generate a cationic nitrogen such as _N ^{2 +.}

例えば、成膜材料としてＡｌを採用する場合、窒化物ガス供給部４０は、成膜処理モード時にＮ_２ガスを供給する。これにより、Ｎ_２をプラズマＰと反応させてＮ^＋またはＮ_２ ^＋とし、昇華したＡｌとＮ^＋またはＮ_２ ^＋によって、ＡｌＮ膜を形成する。そして、窒化物ガス供給部４０は、窒化物イオン照射モード時には、Ｎ_２ガス（正イオンを作る場合）、またはＮＨ_３ガス若しくはＮＨ_２ガス（負イオンを作る場合）を供給する。このような場合、窒化物ガス供給部４０は、供給するガスの種類に応じた複数のガス貯留部と接続され、使用するガスに応じてガス貯留部からガスを引き出してよい。
For example, when Al is used as the film forming material, the nitride gas supply unit 40 _{supplies N 2} gas in the film forming processing mode. Thus, by reacting _{N 2} plasma P ^{N +} or _N ^{2 +} and then sublimated by Al and ^{N +} or _N ^{2 +} it was to form the AlN film. Then, the nitride gas supply unit 40 supplies N ₂ gas (when producing positive ions), or NH ₃ gas or NH ₂ gas (when producing negative ions) in the nitride ion irradiation mode. In such a case, the nitride gas supply unit 40 may be connected to a plurality of gas storage units according to the type of gas to be supplied, and gas may be drawn out from the gas storage unit according to the gas to be used.

Claims

An ion irradiation device that irradiates an AlN substrate with ions.
An ion irradiation device including a nitride ion irradiation unit that generates nitride ions and irradiates the AlN substrate with nitride ions.

The ion irradiation device according to claim 1, wherein the nitride ion irradiation unit generates hydrogen nitride ions as the nitride ions.

The ion irradiation device according to claim 1 or 2, further comprising a heating unit that heats the AlN substrate during or after irradiation of the nitride ions by the nitride ion irradiation unit.

The ion irradiation device according to any one of claims 1 to 3, wherein the nitride ion irradiation unit generates negative ions as the nitride ions.

It is an ion irradiation method of irradiating an AlN substrate with ions.
An ion irradiation method comprising a step of generating nitride ions and irradiating the AlN substrate with the nitride ions.

A film forming apparatus that forms a film of a film forming material on a film forming object.
A chamber for accommodating the film-forming object and performing film-forming,
A plasma gun that generates plasma in the chamber and
A film-forming material holding portion that holds the film-forming material containing Al or AlN in the chamber, and a film-forming material holding portion.
And Ruga scan supply unit to supply at least one to the chamber of the nitride gas and nitrogen gas,
A control unit for controlling the film forming apparatus is provided.
The control unit
The plasma generated by the plasma gun is applied to the film forming material or the film forming material holding portion to form a film of the film forming material on the film forming object.
And it generates the plasma in the plasma gun, at least one of nitride ions and nitrogen ions at least one by supplying into the chamber of the front Kiga scan feed the nitride from part gas and the nitrogen gas A film forming apparatus that is generated and irradiates a film of the film forming material with at least one of the nitride ion and the nitrogen ion.

This is a film forming method for forming a film of a film forming material on a film forming object.
The plasma generated by the plasma gun is irradiated into the chamber to the film-forming material containing Al or AlN or the film-forming material holding portion that holds the film-forming material to form a film of the film-forming material on the film-forming object. And the process to do
And generates the plasma in the plasma gun to generate at least one of nitride ions and nitrogen ions by supplying at least one of nitride and nitrogen gases from the gas supply unit into the chamber, the formation A film forming method comprising a step of irradiating a film of a film material with at least one of the nitride ion and the nitrogen ion.