JP7118306B1 - 導波路型受光素子及び導波路型受光素子アレイ - Google Patents

導波路型受光素子及び導波路型受光素子アレイ Download PDF

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Publication number
JP7118306B1
JP7118306B1 JP2022506158A JP2022506158A JP7118306B1 JP 7118306 B1 JP7118306 B1 JP 7118306B1 JP 2022506158 A JP2022506158 A JP 2022506158A JP 2022506158 A JP2022506158 A JP 2022506158A JP 7118306 B1 JP7118306 B1 JP 7118306B1
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semiconductor
waveguide
light
light incident
semiconductor substrate
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Japanese (ja)
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JPWO2023062766A5 (https=
JPWO2023062766A1 (https=
Inventor
亮太 竹村
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
JP2022506158A 2021-10-14 2021-10-14 導波路型受光素子及び導波路型受光素子アレイ Active JP7118306B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/038000 WO2023062766A1 (ja) 2021-10-14 2021-10-14 導波路型受光素子、導波路型受光素子アレイ及び導波路型受光素子の製造方法

Publications (3)

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JP7118306B1 true JP7118306B1 (ja) 2022-08-15
JPWO2023062766A1 JPWO2023062766A1 (https=) 2023-04-20
JPWO2023062766A5 JPWO2023062766A5 (https=) 2023-09-20

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JP2022506158A Active JP7118306B1 (ja) 2021-10-14 2021-10-14 導波路型受光素子及び導波路型受光素子アレイ

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Country Link
US (1) US20240332438A1 (https=)
JP (1) JP7118306B1 (https=)
CN (1) CN118077062A (https=)
WO (1) WO2023062766A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7468791B1 (ja) * 2022-12-01 2024-04-16 三菱電機株式会社 導波路型受光素子

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202263A (ja) * 1993-12-28 1995-08-04 Ricoh Co Ltd 端面発光型発光ダイオード、アレイ状光源、側面受光型受光素子、受発光素子、端面発光型発光ダイオードアレイ状光源
JPH10107310A (ja) * 1996-09-26 1998-04-24 Japan Aviation Electron Ind Ltd 導波路型フォトダイオードアレイ
JP2000150925A (ja) * 1998-11-05 2000-05-30 Furukawa Electric Co Ltd:The 導波路型集積半導体装置の作製方法
JP2002033504A (ja) * 2000-07-18 2002-01-31 Nippon Sheet Glass Co Ltd 受光素子アレイおよびその実装方法
JP2002203984A (ja) * 2000-10-30 2002-07-19 Nec Corp 半導体受光素子
JP2002305319A (ja) * 2001-04-06 2002-10-18 Toshiba Corp 半導体受光素子および光通信用モジュール
JP2004128064A (ja) * 2002-09-30 2004-04-22 Toshiba Corp 光半導体装置及びその製造方法
JP2006066488A (ja) * 2004-08-25 2006-03-09 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
WO2006123410A1 (ja) * 2005-05-18 2006-11-23 Mitsubishi Denki Kabushiki Kaisha アバランシェフォトダイオード

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202263A (ja) * 1993-12-28 1995-08-04 Ricoh Co Ltd 端面発光型発光ダイオード、アレイ状光源、側面受光型受光素子、受発光素子、端面発光型発光ダイオードアレイ状光源
JPH10107310A (ja) * 1996-09-26 1998-04-24 Japan Aviation Electron Ind Ltd 導波路型フォトダイオードアレイ
JP2000150925A (ja) * 1998-11-05 2000-05-30 Furukawa Electric Co Ltd:The 導波路型集積半導体装置の作製方法
JP2002033504A (ja) * 2000-07-18 2002-01-31 Nippon Sheet Glass Co Ltd 受光素子アレイおよびその実装方法
JP2002203984A (ja) * 2000-10-30 2002-07-19 Nec Corp 半導体受光素子
JP2002305319A (ja) * 2001-04-06 2002-10-18 Toshiba Corp 半導体受光素子および光通信用モジュール
JP2004128064A (ja) * 2002-09-30 2004-04-22 Toshiba Corp 光半導体装置及びその製造方法
JP2006066488A (ja) * 2004-08-25 2006-03-09 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
WO2006123410A1 (ja) * 2005-05-18 2006-11-23 Mitsubishi Denki Kabushiki Kaisha アバランシェフォトダイオード

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7468791B1 (ja) * 2022-12-01 2024-04-16 三菱電機株式会社 導波路型受光素子
WO2024116371A1 (ja) * 2022-12-01 2024-06-06 三菱電機株式会社 導波路型受光素子

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CN118077062A (zh) 2024-05-24
WO2023062766A1 (ja) 2023-04-20
JPWO2023062766A1 (https=) 2023-04-20
US20240332438A1 (en) 2024-10-03

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