JPWO2023062766A5 - - Google Patents

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JPWO2023062766A5
JPWO2023062766A5 JP2022506158A JP2022506158A JPWO2023062766A5 JP WO2023062766 A5 JPWO2023062766 A5 JP WO2023062766A5 JP 2022506158 A JP2022506158 A JP 2022506158A JP 2022506158 A JP2022506158 A JP 2022506158A JP WO2023062766 A5 JPWO2023062766 A5 JP WO2023062766A5
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JP
Japan
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waveguide
buried region
light
semiconductor substrate
semiconductor
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JP2022506158A
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English (en)
Japanese (ja)
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JPWO2023062766A1 (https=
JP7118306B1 (ja
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Priority claimed from PCT/JP2021/038000 external-priority patent/WO2023062766A1/ja
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Publication of JPWO2023062766A1 publication Critical patent/JPWO2023062766A1/ja
Publication of JPWO2023062766A5 publication Critical patent/JPWO2023062766A5/ja
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JP2022506158A 2021-10-14 2021-10-14 導波路型受光素子及び導波路型受光素子アレイ Active JP7118306B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/038000 WO2023062766A1 (ja) 2021-10-14 2021-10-14 導波路型受光素子、導波路型受光素子アレイ及び導波路型受光素子の製造方法

Publications (3)

Publication Number Publication Date
JP7118306B1 JP7118306B1 (ja) 2022-08-15
JPWO2023062766A1 JPWO2023062766A1 (https=) 2023-04-20
JPWO2023062766A5 true JPWO2023062766A5 (https=) 2023-09-20

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ID=82847638

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JP2022506158A Active JP7118306B1 (ja) 2021-10-14 2021-10-14 導波路型受光素子及び導波路型受光素子アレイ

Country Status (4)

Country Link
US (1) US20240332438A1 (https=)
JP (1) JP7118306B1 (https=)
CN (1) CN118077062A (https=)
WO (1) WO2023062766A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120266599A (zh) * 2022-12-01 2025-07-04 三菱电机株式会社 波导型受光元件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202263A (ja) * 1993-12-28 1995-08-04 Ricoh Co Ltd 端面発光型発光ダイオード、アレイ状光源、側面受光型受光素子、受発光素子、端面発光型発光ダイオードアレイ状光源
JPH10107310A (ja) * 1996-09-26 1998-04-24 Japan Aviation Electron Ind Ltd 導波路型フォトダイオードアレイ
JP2000150925A (ja) * 1998-11-05 2000-05-30 Furukawa Electric Co Ltd:The 導波路型集積半導体装置の作製方法
JP2002033504A (ja) * 2000-07-18 2002-01-31 Nippon Sheet Glass Co Ltd 受光素子アレイおよびその実装方法
JP3544352B2 (ja) * 2000-10-30 2004-07-21 日本電気株式会社 半導体受光素子
JP2002305319A (ja) * 2001-04-06 2002-10-18 Toshiba Corp 半導体受光素子および光通信用モジュール
JP2004128064A (ja) * 2002-09-30 2004-04-22 Toshiba Corp 光半導体装置及びその製造方法
JP2006066488A (ja) * 2004-08-25 2006-03-09 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
CN100573925C (zh) * 2005-05-18 2009-12-23 三菱电机株式会社 雪崩光电二极管

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