JPWO2023144960A5 - - Google Patents

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Publication number
JPWO2023144960A5
JPWO2023144960A5 JP2022523704A JP2022523704A JPWO2023144960A5 JP WO2023144960 A5 JPWO2023144960 A5 JP WO2023144960A5 JP 2022523704 A JP2022523704 A JP 2022523704A JP 2022523704 A JP2022523704 A JP 2022523704A JP WO2023144960 A5 JPWO2023144960 A5 JP WO2023144960A5
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JP
Japan
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conductivity type
layer
active
semiconductor substrate
type contact
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JP2022523704A
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English (en)
Japanese (ja)
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JP7103552B1 (ja
JPWO2023144960A1 (https=
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Priority claimed from PCT/JP2022/003098 external-priority patent/WO2023144960A1/ja
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Publication of JP7103552B1 publication Critical patent/JP7103552B1/ja
Publication of JPWO2023144960A1 publication Critical patent/JPWO2023144960A1/ja
Publication of JPWO2023144960A5 publication Critical patent/JPWO2023144960A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2022523704A 2022-01-27 2022-01-27 光半導体装置 Active JP7103552B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/003098 WO2023144960A1 (ja) 2022-01-27 2022-01-27 光半導体装置

Publications (3)

Publication Number Publication Date
JP7103552B1 JP7103552B1 (ja) 2022-07-20
JPWO2023144960A1 JPWO2023144960A1 (https=) 2023-08-03
JPWO2023144960A5 true JPWO2023144960A5 (https=) 2023-12-26

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ID=82482487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022523704A Active JP7103552B1 (ja) 2022-01-27 2022-01-27 光半導体装置

Country Status (5)

Country Link
US (1) US20250141189A1 (https=)
JP (1) JP7103552B1 (https=)
CN (1) CN118541886A (https=)
DE (1) DE112022006526T5 (https=)
WO (1) WO2023144960A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202510039A (zh) * 2023-08-16 2025-03-01 台亞半導體股份有限公司 發光二極體

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
JP2000277852A (ja) * 1999-03-24 2000-10-06 Fuji Xerox Co Ltd 表面発光型半導体レーザ、及びその製造方法
JP2003069152A (ja) * 2001-06-15 2003-03-07 Sony Corp マルチビーム半導体レーザ素子
JP2003152274A (ja) 2001-11-13 2003-05-23 Furukawa Electric Co Ltd:The 半導体レーザ装置、半導体レーザモジュールおよびこれを用いたラマン増幅器
KR100587320B1 (ko) * 2003-12-31 2006-06-08 엘지전자 주식회사 반도체 레이저 다이오드의 제조방법
JP6704942B2 (ja) * 2018-01-31 2020-06-03 浜松ホトニクス株式会社 光半導体素子及び光モジュール

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