JP2023107471A5 - - Google Patents

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Publication number
JP2023107471A5
JP2023107471A5 JP2022008695A JP2022008695A JP2023107471A5 JP 2023107471 A5 JP2023107471 A5 JP 2023107471A5 JP 2022008695 A JP2022008695 A JP 2022008695A JP 2022008695 A JP2022008695 A JP 2022008695A JP 2023107471 A5 JP2023107471 A5 JP 2023107471A5
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JP
Japan
Prior art keywords
semiconductor laser
pad electrode
laser element
heat sink
electrode
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Application number
JP2022008695A
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English (en)
Japanese (ja)
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JP2023107471A (ja
JP7774456B2 (ja
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Publication date
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Priority to JP2022008695A priority Critical patent/JP7774456B2/ja
Priority claimed from JP2022008695A external-priority patent/JP7774456B2/ja
Priority to PCT/JP2023/001051 priority patent/WO2023140224A1/ja
Priority to CN202380017963.XA priority patent/CN118575377A/zh
Publication of JP2023107471A publication Critical patent/JP2023107471A/ja
Publication of JP2023107471A5 publication Critical patent/JP2023107471A5/ja
Application granted granted Critical
Publication of JP7774456B2 publication Critical patent/JP7774456B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2022008695A 2022-01-24 2022-01-24 半導体レーザ装置 Active JP7774456B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2022008695A JP7774456B2 (ja) 2022-01-24 2022-01-24 半導体レーザ装置
PCT/JP2023/001051 WO2023140224A1 (ja) 2022-01-24 2023-01-16 半導体レーザ装置及び半導体レーザ素子の製造方法
CN202380017963.XA CN118575377A (zh) 2022-01-24 2023-01-16 半导体激光装置及半导体激光元件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022008695A JP7774456B2 (ja) 2022-01-24 2022-01-24 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2023107471A JP2023107471A (ja) 2023-08-03
JP2023107471A5 true JP2023107471A5 (https=) 2025-02-03
JP7774456B2 JP7774456B2 (ja) 2025-11-21

Family

ID=87348771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022008695A Active JP7774456B2 (ja) 2022-01-24 2022-01-24 半導体レーザ装置

Country Status (3)

Country Link
JP (1) JP7774456B2 (https=)
CN (1) CN118575377A (https=)
WO (1) WO2023140224A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196824A (ja) * 1992-12-24 1994-07-15 Furukawa Electric Co Ltd:The 半導体素子の製造方法
JP3117107B2 (ja) * 1993-08-03 2000-12-11 シャープ株式会社 光集積回路素子の組立構造
JP2002109774A (ja) 2000-10-02 2002-04-12 Ricoh Co Ltd 光ピックアップ
JP4430848B2 (ja) 2002-01-21 2010-03-10 住友電気工業株式会社 発光装置
JP2007027572A (ja) 2005-07-20 2007-02-01 Sony Corp 半導体発光装置およびその製造方法
JP4492733B2 (ja) 2008-05-27 2010-06-30 ソニー株式会社 発光装置及び発光装置の製造方法
JP2010027942A (ja) 2008-07-23 2010-02-04 Sony Corp 半導体レーザ装置
WO2011102064A1 (ja) 2010-02-19 2011-08-25 Jsr株式会社 n型半導体層上の電極の形成方法
DE102016103862A1 (de) 2016-03-03 2017-09-07 Osram Opto Semiconductors Gmbh Optoelektronische Leuchtvorrichtung, Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Leuchtsystem

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