CN118575377A - 半导体激光装置及半导体激光元件的制造方法 - Google Patents

半导体激光装置及半导体激光元件的制造方法 Download PDF

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Publication number
CN118575377A
CN118575377A CN202380017963.XA CN202380017963A CN118575377A CN 118575377 A CN118575377 A CN 118575377A CN 202380017963 A CN202380017963 A CN 202380017963A CN 118575377 A CN118575377 A CN 118575377A
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CN
China
Prior art keywords
semiconductor laser
laser element
layer
pad electrode
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380017963.XA
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English (en)
Chinese (zh)
Inventor
永井洋希
久纳康光
山田笃志
中谷东吾
荒木刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of CN118575377A publication Critical patent/CN118575377A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN202380017963.XA 2022-01-24 2023-01-16 半导体激光装置及半导体激光元件的制造方法 Pending CN118575377A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-008695 2022-01-24
JP2022008695A JP7774456B2 (ja) 2022-01-24 2022-01-24 半導体レーザ装置
PCT/JP2023/001051 WO2023140224A1 (ja) 2022-01-24 2023-01-16 半導体レーザ装置及び半導体レーザ素子の製造方法

Publications (1)

Publication Number Publication Date
CN118575377A true CN118575377A (zh) 2024-08-30

Family

ID=87348771

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380017963.XA Pending CN118575377A (zh) 2022-01-24 2023-01-16 半导体激光装置及半导体激光元件的制造方法

Country Status (3)

Country Link
JP (1) JP7774456B2 (https=)
CN (1) CN118575377A (https=)
WO (1) WO2023140224A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196824A (ja) * 1992-12-24 1994-07-15 Furukawa Electric Co Ltd:The 半導体素子の製造方法
JP3117107B2 (ja) * 1993-08-03 2000-12-11 シャープ株式会社 光集積回路素子の組立構造
JP2002109774A (ja) 2000-10-02 2002-04-12 Ricoh Co Ltd 光ピックアップ
JP4430848B2 (ja) 2002-01-21 2010-03-10 住友電気工業株式会社 発光装置
JP2007027572A (ja) 2005-07-20 2007-02-01 Sony Corp 半導体発光装置およびその製造方法
JP4492733B2 (ja) 2008-05-27 2010-06-30 ソニー株式会社 発光装置及び発光装置の製造方法
JP2010027942A (ja) 2008-07-23 2010-02-04 Sony Corp 半導体レーザ装置
WO2011102064A1 (ja) 2010-02-19 2011-08-25 Jsr株式会社 ｎ型半導体層上の電極の形成方法
DE102016103862A1 (de) 2016-03-03 2017-09-07 Osram Opto Semiconductors Gmbh Optoelektronische Leuchtvorrichtung, Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Leuchtsystem

Also Published As

Publication number Publication date
WO2023140224A1 (ja) 2023-07-27
JP2023107471A (ja) 2023-08-03
JP7774456B2 (ja) 2025-11-21

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