JP7774456B2 - 半導体レーザ装置 - Google Patents

半導体レーザ装置

Info

Publication number
JP7774456B2
JP7774456B2 JP2022008695A JP2022008695A JP7774456B2 JP 7774456 B2 JP7774456 B2 JP 7774456B2 JP 2022008695 A JP2022008695 A JP 2022008695A JP 2022008695 A JP2022008695 A JP 2022008695A JP 7774456 B2 JP7774456 B2 JP 7774456B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
layer
laser element
pad electrode
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022008695A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023107471A5 (https=
JP2023107471A (ja
Inventor
洋希 永井
康光 久納
篤志 山田
東吾 中谷
剛 荒木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Priority to JP2022008695A priority Critical patent/JP7774456B2/ja
Priority to PCT/JP2023/001051 priority patent/WO2023140224A1/ja
Priority to CN202380017963.XA priority patent/CN118575377A/zh
Publication of JP2023107471A publication Critical patent/JP2023107471A/ja
Publication of JP2023107471A5 publication Critical patent/JP2023107471A5/ja
Application granted granted Critical
Publication of JP7774456B2 publication Critical patent/JP7774456B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2022008695A 2022-01-24 2022-01-24 半導体レーザ装置 Active JP7774456B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2022008695A JP7774456B2 (ja) 2022-01-24 2022-01-24 半導体レーザ装置
PCT/JP2023/001051 WO2023140224A1 (ja) 2022-01-24 2023-01-16 半導体レーザ装置及び半導体レーザ素子の製造方法
CN202380017963.XA CN118575377A (zh) 2022-01-24 2023-01-16 半导体激光装置及半导体激光元件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022008695A JP7774456B2 (ja) 2022-01-24 2022-01-24 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2023107471A JP2023107471A (ja) 2023-08-03
JP2023107471A5 JP2023107471A5 (https=) 2025-02-03
JP7774456B2 true JP7774456B2 (ja) 2025-11-21

Family

ID=87348771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022008695A Active JP7774456B2 (ja) 2022-01-24 2022-01-24 半導体レーザ装置

Country Status (3)

Country Link
JP (1) JP7774456B2 (https=)
CN (1) CN118575377A (https=)
WO (1) WO2023140224A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002109774A (ja) 2000-10-02 2002-04-12 Ricoh Co Ltd 光ピックアップ
JP2003218450A (ja) 2002-01-21 2003-07-31 Sumitomo Electric Ind Ltd 半導体光集積素子
JP2007027572A (ja) 2005-07-20 2007-02-01 Sony Corp 半導体発光装置およびその製造方法
JP2009289775A (ja) 2008-05-27 2009-12-10 Sony Corp 発光装置及び発光装置の製造方法
JP2010027942A (ja) 2008-07-23 2010-02-04 Sony Corp 半導体レーザ装置
WO2011102064A1 (ja) 2010-02-19 2011-08-25 Jsr株式会社 ｎ型半導体層上の電極の形成方法
US20190089125A1 (en) 2016-03-03 2019-03-21 Osram Opto Semiconductors Gmbh Optoelectronic lighting device, carrier for an optoelectronic semiconductor chip, and optoelectronic lighting system

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196824A (ja) * 1992-12-24 1994-07-15 Furukawa Electric Co Ltd:The 半導体素子の製造方法
JP3117107B2 (ja) * 1993-08-03 2000-12-11 シャープ株式会社 光集積回路素子の組立構造

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002109774A (ja) 2000-10-02 2002-04-12 Ricoh Co Ltd 光ピックアップ
JP2003218450A (ja) 2002-01-21 2003-07-31 Sumitomo Electric Ind Ltd 半導体光集積素子
JP2007027572A (ja) 2005-07-20 2007-02-01 Sony Corp 半導体発光装置およびその製造方法
JP2009289775A (ja) 2008-05-27 2009-12-10 Sony Corp 発光装置及び発光装置の製造方法
JP2010027942A (ja) 2008-07-23 2010-02-04 Sony Corp 半導体レーザ装置
WO2011102064A1 (ja) 2010-02-19 2011-08-25 Jsr株式会社 ｎ型半導体層上の電極の形成方法
US20190089125A1 (en) 2016-03-03 2019-03-21 Osram Opto Semiconductors Gmbh Optoelectronic lighting device, carrier for an optoelectronic semiconductor chip, and optoelectronic lighting system

Also Published As

Publication number Publication date
WO2023140224A1 (ja) 2023-07-27
JP2023107471A (ja) 2023-08-03
CN118575377A (zh) 2024-08-30

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