JPWO2023175827A5 - - Google Patents

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Publication number
JPWO2023175827A5
JPWO2023175827A5 JP2024507340A JP2024507340A JPWO2023175827A5 JP WO2023175827 A5 JPWO2023175827 A5 JP WO2023175827A5 JP 2024507340 A JP2024507340 A JP 2024507340A JP 2024507340 A JP2024507340 A JP 2024507340A JP WO2023175827 A5 JPWO2023175827 A5 JP WO2023175827A5
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JP
Japan
Prior art keywords
layer
conductivity type
ridge portion
semiconductor substrate
contact layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024507340A
Other languages
English (en)
Japanese (ja)
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JPWO2023175827A1 (https=
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Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/012234 external-priority patent/WO2023175827A1/ja
Publication of JPWO2023175827A1 publication Critical patent/JPWO2023175827A1/ja
Publication of JPWO2023175827A5 publication Critical patent/JPWO2023175827A5/ja
Pending legal-status Critical Current

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JP2024507340A 2022-03-17 2022-03-17 Pending JPWO2023175827A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/012234 WO2023175827A1 (ja) 2022-03-17 2022-03-17 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023175827A1 JPWO2023175827A1 (https=) 2023-09-21
JPWO2023175827A5 true JPWO2023175827A5 (https=) 2024-08-07

Family

ID=88022572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024507340A Pending JPWO2023175827A1 (https=) 2022-03-17 2022-03-17

Country Status (4)

Country Link
US (1) US20250087970A1 (https=)
JP (1) JPWO2023175827A1 (https=)
CN (1) CN118830155A (https=)
WO (1) WO2023175827A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186661A (ja) * 1997-12-24 1999-07-09 Hitachi Ltd 変調器付半導体レーザ
JP3941296B2 (ja) * 1999-09-20 2007-07-04 三菱電機株式会社 変調器と変調器付き半導体レーザ装置並びにその製造方法
JP2010287604A (ja) * 2009-06-09 2010-12-24 Nec Corp 導波路型光素子及びその製造方法
JP5573386B2 (ja) * 2010-06-10 2014-08-20 三菱電機株式会社 半導体光集積素子及びその製造方法
US20140233595A1 (en) * 2013-02-15 2014-08-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Vertical Cavity Surface Emitting Laser With An Integrated Protection Diode
JP6996183B2 (ja) * 2017-09-14 2022-01-17 日本電信電話株式会社 半導体光素子
JP2019134140A (ja) * 2018-02-02 2019-08-08 住友電気工業株式会社 半導体面発光装置
JP7102930B2 (ja) * 2018-05-18 2022-07-20 富士フイルムビジネスイノベーション株式会社 発光素子アレイ、発光素子アレイの製造方法、および光伝送装置

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