JP7113757B2 - 表示基板、表示基板の製造方法、および表示装置 - Google Patents
表示基板、表示基板の製造方法、および表示装置 Download PDFInfo
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- JP7113757B2 JP7113757B2 JP2018552877A JP2018552877A JP7113757B2 JP 7113757 B2 JP7113757 B2 JP 7113757B2 JP 2018552877 A JP2018552877 A JP 2018552877A JP 2018552877 A JP2018552877 A JP 2018552877A JP 7113757 B2 JP7113757 B2 JP 7113757B2
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- 239000000758 substrate Substances 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 164
- 239000002184 metal Substances 0.000 claims description 164
- 239000004020 conductor Substances 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 43
- 239000010936 titanium Substances 0.000 claims description 39
- 229910052719 titanium Inorganic materials 0.000 claims description 39
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 38
- 230000007797 corrosion Effects 0.000 claims description 34
- 238000005260 corrosion Methods 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
- 229910052782 aluminium Inorganic materials 0.000 claims description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 14
- 239000002245 particle Substances 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 239000010405 anode material Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000007769 metal material Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
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- Electroluminescent Light Sources (AREA)
Description
本開示については、2017年7月17日に出願された中国特許出願番号201710584603.4である出願を基礎とする優先権を主張し、当該基礎出願の内容をすべて本開示にとりこむものとする。
パッド領域1000には、第1の金属サブ層34と、第1の金属サブ層34の上に積層され、耐腐食性が第1の金属サブ層34の耐腐食性よりも強い第2の金属サブ層36とを含む金属層30を形成するステップと、
第2の金属サブ層36の上にプリ導電材料層40を形成するステップと、
プリ導電材料層40の上にフォトレジスト50を塗布するステップと、
を含む。
20 絶縁層
30 金属層
32 第3の金属サブ層
34 第1の金属サブ層
36 第2の金属サブ層
40 プリ導電材料層
50 フォトレジスト
60 異方性導電ペースト
65 金球
70 画素定義層
75 画素定義層
80 表示電極
90 薄膜トランジスタ(TFT)
91 ゲート
92 層間誘電体層
93 能動層
94 ソース金属層
96 ドレイン金属層
100 パッド
150 パッド
1000 パッド領域
2000 表示領域
Claims (4)
- 表示電極を含む表示領域と前記表示領域以外のパッド領域とを含む表示基板であって、
前記表示領域は、ソースおよびドレインを有するトランジスタを含み、
前記パッド領域は、少なくとも一つのパッドを含み、
前記パッドは、
前記表示領域の前記ソースおよびドレインと同層に設置されている金属層であって、第1の金属サブ層と、前記第1の金属サブ層の上に積層され、耐腐食性が前記第1の金属サブ層の耐腐食性よりも強い第2の金属サブ層とを含む金属層と、
前記表示領域の前記表示電極と同層に設置され、前記表示領域の前記ソースおよびドレインと同層に設置されている前記金属層の側面を覆い、前記表示領域の前記ソースおよびドレインと同層に設置されている前記金属層の少なくとも一部の上面を覆わない導電材料層と、
を備え、
前記表示電極は、アノードを含み、
前記パッドの前記導電材料層は、前記アノードと同層に設置されており、
前記第1の金属サブ層は、アルミニウムを含み、
前記第2の金属サブ層は、チタンを含む、
ことを特徴とする表示基板。 - 前記金属層は、第3の金属サブ層をさらに含み、
前記第1の金属サブ層は、前記第3の金属サブ層の上に積層され、
前記第3の金属サブ層の耐腐食性は、前記第1の金属サブ層の耐腐食性よりも強い、
ことを特徴とする請求項1に記載の表示基板。 - 請求項1または2に記載の表示基板を含む、
ことを特徴とする表示装置。 - 表示電極を含む表示領域と前記表示領域以外のパッド領域とを含む表示基板を製造する方法であって、
前記表示領域は、ソースおよびドレインを有するトランジスタを含み、
パッド領域には、前記表示領域の前記ソースおよびドレインと同時に形成される金属層であって、第1の金属サブ層と、前記第1の金属サブ層の上に積層され、耐腐食性が前記第1の金属サブ層の耐腐食性よりも強い第2の金属サブ層とを含む金属層を形成するステップと、
前記表示領域の前記ソースおよびドレインと同時に形成された前記金属層の側面を覆う導電材料層を形成するステップと、
を含み、
導電材料層を形成するステップは、
少なくとも前記金属層の上面および側面を覆うプリ導電材料層を形成するステップと、
前記プリ導電材料層の上にフォトレジストを塗布するステップと、
マスクを介して前記フォトレジストを露出し現像して、前記プリ導電材料層の一部を暴露するステップであって、前記現像の後、前記金属層の側面の上のプリ導電材料層を覆うフォトレジストが少なくとも保留され、前記金属層の一部の上面の上のプリ導電材料層を覆うフォトレジストが少なくとも除去されるステップと、
前記プリ導電材料層の暴露された部分をエッチングするステップと、
残りのフォトレジストを除去するステップと、
を含み、
前記現像の後、前記表示領域中の前記プリ導電材料層の一部を覆うフォトレジストがさらに保留され、残りのフォトレジストを除去した後、前記表示領域中の前記プリ導電材料層の部分に表示電極を形成し、
前記表示電極は、アノードを含み、
前記パッド領域の前記導電材料層は、前記表示領域の前記アノードと同時に形成される、
ことを特徴とする方法。
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PCT/CN2018/072071 WO2019015270A1 (zh) | 2017-07-17 | 2018-01-10 | 显示基板及其制备方法和显示装置 |
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CN112005377B (zh) * | 2019-03-26 | 2023-04-28 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
CN111682050B (zh) * | 2020-06-22 | 2022-04-01 | 武汉华星光电半导体显示技术有限公司 | 触控显示装置及其制造方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000267595A (ja) | 1999-03-15 | 2000-09-29 | Toshiba Corp | 表示装置用アレイ基板の製造方法 |
US20110084257A1 (en) | 2009-10-09 | 2011-04-14 | Samsung Mobile Display Co., Ltd. | Organic light emitting diode display and method of manufacturing the same |
JP2014145857A (ja) | 2013-01-28 | 2014-08-14 | Sony Corp | 表示装置およびその製造方法、並びに電子機器 |
US20160020422A1 (en) | 2014-07-16 | 2016-01-21 | Lg Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2988159B2 (ja) * | 1992-11-13 | 1999-12-06 | 日本電気株式会社 | 液晶表示装置 |
US6639265B2 (en) | 2000-01-26 | 2003-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
KR20020083249A (ko) * | 2001-04-26 | 2002-11-02 | 삼성전자 주식회사 | 배선의 접촉 구조 및 그의 제조 방법과 이를 포함하는박막 트랜지스터 기판 및 그 제조 방법 |
JP4036154B2 (ja) | 2002-09-12 | 2008-01-23 | セイコーエプソン株式会社 | 配線構造の製造方法、電気光学装置の製造方法、電気光学装置および電子機器 |
JP2006047827A (ja) * | 2004-08-06 | 2006-02-16 | Mitsubishi Electric Corp | 液晶表示装置およびその製造方法 |
KR101232549B1 (ko) * | 2005-12-29 | 2013-02-12 | 엘지디스플레이 주식회사 | 유기 전계 발광 표시 장치 및 이의 제조 방법 |
CN101645456A (zh) * | 2008-08-06 | 2010-02-10 | 奇美电子股份有限公司 | 电子装置、薄膜晶体管、显示装置及导体接触工艺 |
BRPI0920935A2 (pt) * | 2008-11-26 | 2019-09-24 | Sharp Kk | dispositivo de video |
JP5624061B2 (ja) * | 2009-03-05 | 2014-11-12 | コーニンクレッカ フィリップス エヌ ヴェ | 直列接続されたoled |
WO2013011602A1 (ja) * | 2011-07-19 | 2013-01-24 | パナソニック株式会社 | 表示装置、及び表示装置の製造方法 |
CN102496616B (zh) * | 2011-11-28 | 2016-04-27 | 日月光半导体制造股份有限公司 | 具有整合被动元件的半导体元件及其制造方法 |
KR101980766B1 (ko) | 2012-12-27 | 2019-05-21 | 엘지디스플레이 주식회사 | 터치 패널 내장형 유기 발광 다이오드 표시 장치 |
KR102077144B1 (ko) * | 2013-05-30 | 2020-02-14 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그 제조 방법 |
EP2966705B1 (en) * | 2014-07-11 | 2018-09-19 | LG Display Co., Ltd. | Organic light-emitting diode display device and method of fabricating the same |
KR102230692B1 (ko) * | 2014-07-29 | 2021-03-19 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
JPWO2016075791A1 (ja) * | 2014-11-13 | 2017-08-24 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US10032844B2 (en) * | 2014-12-29 | 2018-07-24 | Lg Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
KR102377531B1 (ko) | 2015-01-23 | 2022-03-22 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101879180B1 (ko) | 2015-11-16 | 2018-07-17 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN106338866B (zh) * | 2016-10-18 | 2019-08-02 | 武汉华星光电技术有限公司 | 一种液晶面板的焊盘区域结构 |
KR20180062293A (ko) * | 2016-11-30 | 2018-06-08 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
-
2017
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-
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- 2018-01-10 JP JP2018552877A patent/JP7113757B2/ja active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000267595A (ja) | 1999-03-15 | 2000-09-29 | Toshiba Corp | 表示装置用アレイ基板の製造方法 |
US20110084257A1 (en) | 2009-10-09 | 2011-04-14 | Samsung Mobile Display Co., Ltd. | Organic light emitting diode display and method of manufacturing the same |
JP2014145857A (ja) | 2013-01-28 | 2014-08-14 | Sony Corp | 表示装置およびその製造方法、並びに電子機器 |
US20160020422A1 (en) | 2014-07-16 | 2016-01-21 | Lg Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
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