JP7113757B2 - 表示基板、表示基板の製造方法、および表示装置 - Google Patents

表示基板、表示基板の製造方法、および表示装置 Download PDF

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JP7113757B2
JP7113757B2 JP2018552877A JP2018552877A JP7113757B2 JP 7113757 B2 JP7113757 B2 JP 7113757B2 JP 2018552877 A JP2018552877 A JP 2018552877A JP 2018552877 A JP2018552877 A JP 2018552877A JP 7113757 B2 JP7113757 B2 JP 7113757B2
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layer
metal
display
conductive material
display area
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JP2020526778A (ja
JP2020526778A5 (https=
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▲ウェイ▼贇 ▲黄▼
▲海▼▲剛▼ 青
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01908—Manufacture or treatment of bond pads using permanent auxiliary members, e.g. using alignment marks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/953—Materials of bond pads not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
JP2018552877A 2017-07-17 2018-01-10 表示基板、表示基板の製造方法、および表示装置 Active JP7113757B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201710584603.4A CN109273483B (zh) 2017-07-17 2017-07-17 显示基板及其制备方法和显示装置
CN201710584603.4 2017-07-17
PCT/CN2018/072071 WO2019015270A1 (zh) 2017-07-17 2018-01-10 显示基板及其制备方法和显示装置

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JP2020526778A JP2020526778A (ja) 2020-08-31
JP2020526778A5 JP2020526778A5 (https=) 2020-12-17
JP7113757B2 true JP7113757B2 (ja) 2022-08-05

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US (1) US10756034B2 (https=)
EP (1) EP3457438A4 (https=)
JP (1) JP7113757B2 (https=)
CN (1) CN109273483B (https=)
WO (1) WO2019015270A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020191623A1 (zh) * 2019-03-26 2020-10-01 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN113809095B (zh) * 2020-05-27 2024-12-31 京东方科技集团股份有限公司 阵列基板及其制备方法
CN111682050B (zh) * 2020-06-22 2022-04-01 武汉华星光电半导体显示技术有限公司 触控显示装置及其制造方法
CN111708465B (zh) * 2020-07-08 2023-07-25 武汉华星光电半导体显示技术有限公司 触控显示装置及其制造方法
CN112002251B (zh) * 2020-08-06 2022-05-31 Tcl华星光电技术有限公司 显示面板及其制备方法
CN111916463B (zh) * 2020-08-20 2023-03-24 武汉华星光电技术有限公司 阵列基板、其制备方法及显示面板
WO2022048538A1 (zh) 2020-09-07 2022-03-10 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板和背光模组
CN120152481A (zh) * 2020-09-10 2025-06-13 京东方科技集团股份有限公司 一种发光基板、显示装置及制作方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2000267595A (ja) 1999-03-15 2000-09-29 Toshiba Corp 表示装置用アレイ基板の製造方法
US20110084257A1 (en) 2009-10-09 2011-04-14 Samsung Mobile Display Co., Ltd. Organic light emitting diode display and method of manufacturing the same
JP2014145857A (ja) 2013-01-28 2014-08-14 Sony Corp 表示装置およびその製造方法、並びに電子機器
US20160020422A1 (en) 2014-07-16 2016-01-21 Lg Display Co., Ltd. Organic light emitting display device and method of manufacturing the same

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US6639265B2 (en) * 2000-01-26 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
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JP4036154B2 (ja) * 2002-09-12 2008-01-23 セイコーエプソン株式会社 配線構造の製造方法、電気光学装置の製造方法、電気光学装置および電子機器
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EP3220410A4 (en) 2014-11-13 2018-07-18 Renesas Electronics Corporation Semiconductor device and manufacturing method for same
US10032844B2 (en) 2014-12-29 2018-07-24 Lg Display Co., Ltd. Organic light emitting display device and method of manufacturing the same
KR102377531B1 (ko) 2015-01-23 2022-03-22 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101879180B1 (ko) 2015-11-16 2018-07-17 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
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Publication number Priority date Publication date Assignee Title
JP2000267595A (ja) 1999-03-15 2000-09-29 Toshiba Corp 表示装置用アレイ基板の製造方法
US20110084257A1 (en) 2009-10-09 2011-04-14 Samsung Mobile Display Co., Ltd. Organic light emitting diode display and method of manufacturing the same
JP2014145857A (ja) 2013-01-28 2014-08-14 Sony Corp 表示装置およびその製造方法、並びに電子機器
US20160020422A1 (en) 2014-07-16 2016-01-21 Lg Display Co., Ltd. Organic light emitting display device and method of manufacturing the same

Also Published As

Publication number Publication date
JP2020526778A (ja) 2020-08-31
WO2019015270A1 (zh) 2019-01-24
CN109273483A (zh) 2019-01-25
US20190189573A1 (en) 2019-06-20
EP3457438A4 (en) 2020-03-11
CN109273483B (zh) 2021-04-02
US10756034B2 (en) 2020-08-25
EP3457438A1 (en) 2019-03-20

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