JP7112491B2 - セラミック焼結体およびプラズマ処理装置用部材 - Google Patents
セラミック焼結体およびプラズマ処理装置用部材 Download PDFInfo
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- JP7112491B2 JP7112491B2 JP2020527643A JP2020527643A JP7112491B2 JP 7112491 B2 JP7112491 B2 JP 7112491B2 JP 2020527643 A JP2020527643 A JP 2020527643A JP 2020527643 A JP2020527643 A JP 2020527643A JP 7112491 B2 JP7112491 B2 JP 7112491B2
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- peripheral surface
- yttrium
- plasma processing
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- ceramic sintered
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- 239000000919 ceramic Substances 0.000 title claims description 21
- 230000002093 peripheral effect Effects 0.000 claims description 38
- 229910052727 yttrium Inorganic materials 0.000 claims description 24
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 24
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 18
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 18
- 238000002441 X-ray diffraction Methods 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 10
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 38
- 239000000843 powder Substances 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000002270 dispersing agent Substances 0.000 description 5
- 239000004014 plasticizer Substances 0.000 description 5
- 239000001993 wax Substances 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910020323 ClF3 Inorganic materials 0.000 description 1
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 238000003991 Rietveld refinement Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9669—Resistance against chemicals, e.g. against molten glass or molten salts
- C04B2235/9684—Oxidation resistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Description
2 :上部電極
2a :プラズマ処理装置用部材、ガス通路管
2b :電極板
2c :拡散部
2d :導入孔
2e :保持部材
3 :下部電極
4 :高周波電源
5 :静電チャック
6、7:測定点
8 :凸状部
9 :結晶粒子
10 :プラズマ処理装置
Claims (5)
- 酸化イットリウムを主成分とし、珪酸イットリウムを含むセラミック焼結体であって、X線回折法によって得られる、回折角2θが28°~30°の酸化イットリウムの最大ピーク強度Ioに対する、回折角2θが30°~32°の珪酸イットリウムの最大ピーク強度I1の比(I1/Io)が0.03以上0.12以下である、セラミック焼結体からなり、内部がプラズマ生成用ガスの流路となる筒状体であり、前記筒状体の内周面は前記筒状体の外周面よりも珪酸イットリウムを多く含む、プラズマ処理装置用部材。
- 前記セラミック焼結体は、YAP(AlYO3)、YAM(Al2Y4O9)およびYAG(Al5Y3O12)の少なくともいずれかであるイットリウムアルミニウム酸化物を含む、請求項1に記載のプラズマ処理装置用部材。
- 前記筒状体の内周面における珪酸イットリウムの最大ピーク強度I1は、前記筒状体の外周面における珪酸イットリウムの最大ピーク強度I1よりも大きい請求項1または2に記載のプラズマ処理装置用部材。
- 前記筒状体の内周面は前記筒状体の外周面よりもイットリウムアルミニウム酸化物を多く含む、請求項1乃至3のいずれかに記載のプラズマ処理装置用部材。
- 前記筒状体の外周面は、外側に向かって伸びる凸状部を有する結晶粒子を備えている、請求項1乃至請求項4のいずれかに記載のプラズマ処理装置用部材。
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PCT/JP2019/025653 WO2020004563A1 (ja) | 2018-06-28 | 2019-06-27 | セラミック焼結体およびプラズマ処理装置用部材 |
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EP (1) | EP3816136A4 (ja) |
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KR102659099B1 (ko) * | 2022-09-06 | 2024-04-18 | 한국재료연구원 | 이트륨계 복합 소결체를 포함하는 반도체 제조용 플라즈마 식각 장치 부품 및 그 제조방법 |
Citations (3)
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JP2005097685A (ja) | 2002-11-27 | 2005-04-14 | Kyocera Corp | 耐食性部材およびその製造方法 |
JP2008260651A (ja) | 2007-04-11 | 2008-10-30 | Nitsukatoo:Kk | Y2o3質焼結体 |
WO2013065666A1 (ja) | 2011-10-31 | 2013-05-10 | 京セラ株式会社 | ガスノズル、これを用いたプラズマ装置およびガスノズルの製造方法 |
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JP3186158B2 (ja) * | 1992-01-21 | 2001-07-11 | 住友電気工業株式会社 | 複合セラミックス焼結体およびその製造方法 |
US5459111A (en) * | 1992-01-21 | 1995-10-17 | Sumitomo Electric Industries, Ltd. | Composite ceramics sintered body |
JP4548887B2 (ja) | 1999-12-27 | 2010-09-22 | 京セラ株式会社 | 耐食性セラミック部材およびその製造方法 |
JP6473830B2 (ja) * | 2015-10-30 | 2019-02-20 | 京セラ株式会社 | シャワープレート、半導体製造装置およびシャワープレートの製造方法 |
KR102674364B1 (ko) * | 2015-11-16 | 2024-06-13 | 쿠어스 테크, 인코포레이티드 | 내부식성 부품 및 제조 방법 |
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JP2005097685A (ja) | 2002-11-27 | 2005-04-14 | Kyocera Corp | 耐食性部材およびその製造方法 |
JP2008260651A (ja) | 2007-04-11 | 2008-10-30 | Nitsukatoo:Kk | Y2o3質焼結体 |
WO2013065666A1 (ja) | 2011-10-31 | 2013-05-10 | 京セラ株式会社 | ガスノズル、これを用いたプラズマ装置およびガスノズルの製造方法 |
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US20210265140A1 (en) | 2021-08-26 |
EP3816136A4 (en) | 2022-03-30 |
CN112334433A (zh) | 2021-02-05 |
KR20210011442A (ko) | 2021-02-01 |
KR102585554B1 (ko) | 2023-10-06 |
EP3816136A1 (en) | 2021-05-05 |
JPWO2020004563A1 (ja) | 2021-08-02 |
WO2020004563A1 (ja) | 2020-01-02 |
CN112334433B (zh) | 2022-10-25 |
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