JP7470222B2 - ガスノズルの製造方法 - Google Patents
ガスノズルの製造方法 Download PDFInfo
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- JP7470222B2 JP7470222B2 JP2023025189A JP2023025189A JP7470222B2 JP 7470222 B2 JP7470222 B2 JP 7470222B2 JP 2023025189 A JP2023025189 A JP 2023025189A JP 2023025189 A JP2023025189 A JP 2023025189A JP 7470222 B2 JP7470222 B2 JP 7470222B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000002347 injection Methods 0.000 claims description 51
- 239000007924 injection Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 49
- 238000005498 polishing Methods 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 16
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 16
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 11
- 238000000227 grinding Methods 0.000 claims description 11
- 239000011553 magnetic fluid Substances 0.000 claims description 11
- 239000002243 precursor Substances 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 239000008187 granular material Substances 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 87
- 239000002245 particle Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 150000002222 fluorine compounds Chemical class 0.000 description 4
- 239000006249 magnetic particle Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- HCXABBJICMOFPU-UHFFFAOYSA-N O(F)F.[Er] Chemical compound O(F)F.[Er] HCXABBJICMOFPU-UHFFFAOYSA-N 0.000 description 1
- YKJMTUPHTZPQHT-UHFFFAOYSA-N O(F)F.[Ho] Chemical compound O(F)F.[Ho] YKJMTUPHTZPQHT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- CHBIYWIUHAZZNR-UHFFFAOYSA-N [Y].FOF Chemical compound [Y].FOF CHBIYWIUHAZZNR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- OKOSPWNNXVDXKZ-UHFFFAOYSA-N but-3-enoyl chloride Chemical compound ClC(=O)CC=C OKOSPWNNXVDXKZ-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- AQYBMRSFTQBAJJ-UHFFFAOYSA-N dysprosium fluoro hypofluorite Chemical compound O(F)F.[Dy] AQYBMRSFTQBAJJ-UHFFFAOYSA-N 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 description 1
- OWCYYNSBGXMRQN-UHFFFAOYSA-N holmium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ho+3].[Ho+3] OWCYYNSBGXMRQN-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- JHYILIUWFVFNFI-UHFFFAOYSA-M oxygen(2-) ytterbium(3+) fluoride Chemical compound [O--].[F-].[Yb+3] JHYILIUWFVFNFI-UHFFFAOYSA-M 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- FWQVINSGEXZQHB-UHFFFAOYSA-K trifluorodysprosium Chemical compound F[Dy](F)F FWQVINSGEXZQHB-UHFFFAOYSA-K 0.000 description 1
- QGJSAGBHFTXOTM-UHFFFAOYSA-K trifluoroerbium Chemical compound F[Er](F)F QGJSAGBHFTXOTM-UHFFFAOYSA-K 0.000 description 1
- 238000003826 uniaxial pressing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
- XASAPYQVQBKMIN-UHFFFAOYSA-K ytterbium(iii) fluoride Chemical compound F[Yb](F)F XASAPYQVQBKMIN-UHFFFAOYSA-K 0.000 description 1
- 229940105963 yttrium fluoride Drugs 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B15/00—Details of spraying plant or spraying apparatus not otherwise provided for; Accessories
- B05B15/14—Arrangements for preventing or controlling structural damage to spraying apparatus or its outlets, e.g. for breaking at desired places; Arrangements for handling or replacing damaged parts
- B05B15/18—Arrangements for preventing or controlling structural damage to spraying apparatus or its outlets, e.g. for breaking at desired places; Arrangements for handling or replacing damaged parts for improving resistance to wear, e.g. inserts or coatings; for indicating wear; for handling or replacing worn parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
2 反応室
3 ガス導入管
4 ガスノズル
5 基板
6 内部電極
7 基板保持部
8 バイアス電源
9 コイル
10 電源
11 供給孔
12 噴射孔
13 供給口
14 噴射口
15 凹部
16 貯留部
Claims (8)
- ガスを案内する管状の供給孔と、該供給孔に接続する噴射孔とを備え、該噴射孔から前記ガスを噴射するガスノズルの製造方法であって、
希土類元素の酸化物、フッ化物もしくは酸フッ化物、またはイットリウムアルミニウム複合酸化物を主成分とする顆粒を加圧成形して成形体を得る工程と、
前記成形体に切削加工を施して供給孔用下穴および噴射孔用下穴が形成された前駆体を得る工程と、
前記前駆体を焼成して前記供給孔および前記噴射孔を備えた焼結体を得る工程と、
前記焼結体の少なくとも前記供給孔を形成する内周面を磁性流体研磨法を用いて研磨する工程と、
を含むガスノズルの製造方法。 - ガスを案内する管状の供給孔と、該供給孔に接続する噴射孔とを備え、該噴射孔から前記ガスを噴射するガスノズルの製造方法であって、
希土類元素の酸化物、フッ化物もしくは酸フッ化物、またはイットリウムアルミニウム複合酸化物を主成分とする顆粒を加圧成形して成形体を得る工程と、
前記成形体に切削加工を施して供給孔用下穴が形成された前駆体を得る工程と、
前記前駆体を焼成して前記供給孔を備えた焼結体を得る工程と、前記焼結体にホーニング加工、超音波ロータリー加工または研削加工を施して前記噴射孔を形成する工程と、
前記焼結体の少なくとも前記供給孔を形成する内周面を磁性流体研磨法を用いて研磨する工程と、
を含むガスノズルの製造方法。 - ガスを案内する管状の供給孔と、該供給孔に接続する噴射孔とを備え、該噴射孔から前記ガスを噴射するガスノズルの製造方法であって、
希土類元素の酸化物、フッ化物もしくは酸フッ化物、またはイットリウムアルミニウム複合酸化物を主成分とする円柱状の単結晶インゴットを育成する工程と、
前記単結晶インゴットにホーニング加工、超音波ロータリー加工または研削加工を施して前記供給孔および前記噴射孔を形成する工程と、
前記単結晶インゴットの少なくとも前記供給孔を形成する内周面を磁性流体研磨法を用いて研磨する工程と、
を含むガスノズルの製造方法。 - 前記磁性流体研磨法を用いて研磨する工程において、前記焼結体の外周側に磁石を配置する、請求項1または2に記載のガスノズルの製造方法。
- 前記磁性流体研磨法を用いて研磨する工程において、前記単結晶インゴットの外周側に磁石を配置する、請求項3に記載のガスノズルの製造方法。
- 前記噴射孔の軸心を前記供給孔の軸心に対して傾斜させる、請求項1~5のいずれかに記載のガスノズルの製造方法。
- 前記噴射孔の直径を前記供給孔の直径よりも小さくする、請求項1~6のいずれかに記載のガスノズルの製造方法。
- 前記供給孔におけるガスの流入側の算術平均粗さRaの最大値を、前記噴射孔におけるガスの流入側の算術平均粗さRaの最大値よりも小さくする、請求項1~7のいずれかに記載のガスノズルの製造方法。
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JP2018220528 | 2018-11-26 | ||
JP2018220528 | 2018-11-26 | ||
PCT/JP2019/045876 WO2020110965A1 (ja) | 2018-11-26 | 2019-11-22 | ガスノズルおよびガスノズルの製造方法ならびにプラズマ処理装置 |
JP2020557688A JPWO2020110965A1 (ja) | 2018-11-26 | 2019-11-22 | ガスノズルおよびガスノズルの製造方法ならびにプラズマ処理装置 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006015468A (ja) | 2004-07-05 | 2006-01-19 | Tochigi Prefecture | 磁性砥粒及び磁気研磨法 |
JP2007009988A (ja) | 2005-06-29 | 2007-01-18 | Shin Etsu Chem Co Ltd | 希土類金属部品 |
WO2013065666A1 (ja) | 2011-10-31 | 2013-05-10 | 京セラ株式会社 | ガスノズル、これを用いたプラズマ装置およびガスノズルの製造方法 |
WO2014119177A1 (ja) | 2013-01-30 | 2014-08-07 | 京セラ株式会社 | ガスノズルおよびこれを用いたプラズマ装置 |
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JPH1050677A (ja) * | 1996-07-31 | 1998-02-20 | Ibiden Co Ltd | プラズマエッチング用電極板 |
JP4423082B2 (ja) * | 2004-03-29 | 2010-03-03 | 京セラ株式会社 | ガスノズルおよびその製造方法とそれを用いた薄膜形成装置 |
KR20080014778A (ko) * | 2005-04-18 | 2008-02-14 | 호쿠리쿠세이케고교 가부시키가이샤 | 샤워 플레이트 및 그 제조 방법 |
KR101338301B1 (ko) * | 2005-09-16 | 2013-12-09 | 고에키자이단호진 고쿠사이카가쿠 신고우자이단 | 표시 장치 등의 전자 장치의 제조 장치, 제조 방법, 및표시 장치 등의 전자 장치 |
JP5352872B2 (ja) * | 2007-03-15 | 2013-11-27 | 国立大学法人宇都宮大学 | 研磨用複合粒子の製造方法 |
JP5818338B2 (ja) * | 2011-08-30 | 2015-11-18 | 株式会社不二越 | 磁気内面研磨装置および磁気内面研磨方法 |
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