JP7057122B2 - 金属汚染評価方法 - Google Patents

金属汚染評価方法 Download PDF

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Publication number
JP7057122B2
JP7057122B2 JP2017246190A JP2017246190A JP7057122B2 JP 7057122 B2 JP7057122 B2 JP 7057122B2 JP 2017246190 A JP2017246190 A JP 2017246190A JP 2017246190 A JP2017246190 A JP 2017246190A JP 7057122 B2 JP7057122 B2 JP 7057122B2
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lifetime
silicon wafer
metal contamination
concentration
evaluation method
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Japanese (ja)
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JP2019114633A (ja
JP2019114633A5 (https=
Inventor
延恵 荒木
健 小野塚
知幸 石原
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GlobalWafers Japan Co Ltd
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GlobalWafers Japan Co Ltd
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Priority to JP2017246190A priority Critical patent/JP7057122B2/ja
Application filed by GlobalWafers Japan Co Ltd filed Critical GlobalWafers Japan Co Ltd
Priority to CN201880082997.6A priority patent/CN111480219A/zh
Priority to KR1020207021032A priority patent/KR102463966B1/ko
Priority to US16/956,282 priority patent/US11538721B2/en
Priority to PCT/JP2018/029009 priority patent/WO2019123706A1/ja
Priority to EP18891783.5A priority patent/EP3731263A4/en
Priority to TW107128807A priority patent/TWI717628B/zh
Publication of JP2019114633A publication Critical patent/JP2019114633A/ja
Publication of JP2019114633A5 publication Critical patent/JP2019114633A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6408—Fluorescence; Phosphorescence with measurement of decay time, time resolved fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32073—Corona discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Plasma & Fusion (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
JP2017246190A 2017-12-22 2017-12-22 金属汚染評価方法 Active JP7057122B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2017246190A JP7057122B2 (ja) 2017-12-22 2017-12-22 金属汚染評価方法
KR1020207021032A KR102463966B1 (ko) 2017-12-22 2018-08-02 금속 오염 평가 방법
US16/956,282 US11538721B2 (en) 2017-12-22 2018-08-02 Evaluation method of metal contamination
PCT/JP2018/029009 WO2019123706A1 (ja) 2017-12-22 2018-08-02 金属汚染評価方法
CN201880082997.6A CN111480219A (zh) 2017-12-22 2018-08-02 金属污染评价方法
EP18891783.5A EP3731263A4 (en) 2017-12-22 2018-08-02 METAL CONTAMINATION ASSESSMENT PROCESS
TW107128807A TWI717628B (zh) 2017-12-22 2018-08-17 金屬污染評價方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017246190A JP7057122B2 (ja) 2017-12-22 2017-12-22 金属汚染評価方法

Publications (3)

Publication Number Publication Date
JP2019114633A JP2019114633A (ja) 2019-07-11
JP2019114633A5 JP2019114633A5 (https=) 2020-04-16
JP7057122B2 true JP7057122B2 (ja) 2022-04-19

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Country Status (7)

Country Link
US (1) US11538721B2 (https=)
EP (1) EP3731263A4 (https=)
JP (1) JP7057122B2 (https=)
KR (1) KR102463966B1 (https=)
CN (1) CN111480219A (https=)
TW (1) TWI717628B (https=)
WO (1) WO2019123706A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7561498B2 (ja) 2020-02-14 2024-10-04 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法
CN112366146A (zh) * 2020-11-05 2021-02-12 天津中环领先材料技术有限公司 一种晶圆片的寿命测试方法
CN112908876A (zh) * 2021-01-18 2021-06-04 上海新昇半导体科技有限公司 硅片金属污染测试方法及装置
JP7249395B1 (ja) * 2021-11-10 2023-03-30 株式会社Sumco 半導体試料の評価方法、半導体試料の評価装置および半導体ウェーハの製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004189584A (ja) 2002-10-18 2004-07-08 Sumitomo Mitsubishi Silicon Corp シリコン単結晶インゴットの点欠陥分布を測定する方法
JP2010177494A (ja) 2009-01-30 2010-08-12 Covalent Materials Corp シリコンウェーハの熱処理方法
WO2010119614A1 (ja) 2009-04-13 2010-10-21 信越半導体株式会社 アニールウエーハおよびアニールウエーハの製造方法ならびにデバイスの製造方法
JP2013084840A (ja) 2011-10-12 2013-05-09 Shin Etsu Handotai Co Ltd 金属汚染評価方法及びエピタキシャルウェーハの製造方法
JP2013105914A (ja) 2011-11-14 2013-05-30 Shin Etsu Handotai Co Ltd 気相成長装置の清浄度評価方法
JP2014058414A (ja) 2012-09-14 2014-04-03 Jnc Corp 評価用シリコン単結晶の製造方法
JP2017103275A (ja) 2015-11-30 2017-06-08 株式会社Sumco シリコンウェーハの評価方法およびその利用

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GB0216184D0 (en) 2002-07-12 2002-08-21 Aoti Operating Co Inc Detection method and apparatus
TWI231357B (en) 2002-10-18 2005-04-21 Sumitomo Mitsubishi Silicon Method for measuring defect-distribution in silicon monocrystal ingot
KR100500712B1 (ko) * 2002-12-16 2005-07-11 주식회사 실트론 실리콘웨이퍼의 금속 불순물 농도 측정 방법
JP2009266835A (ja) * 2008-04-21 2009-11-12 Sumco Corp シリコン単結晶の金属汚染評価方法
JP5439752B2 (ja) 2008-06-13 2014-03-12 信越半導体株式会社 汚染検出用モニターウェーハ、汚染検出方法及びエピタキシャルウェーハの製造方法
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JP5467923B2 (ja) * 2010-05-06 2014-04-09 信越半導体株式会社 金属汚染評価用シリコンウエーハの製造方法
JP5621612B2 (ja) 2011-01-19 2014-11-12 株式会社Sumco シリコン単結晶の検査方法および製造方法
JP5742742B2 (ja) * 2012-02-08 2015-07-01 信越半導体株式会社 金属汚染評価方法
JP5733245B2 (ja) 2012-03-16 2015-06-10 信越半導体株式会社 シリコン単結晶ウェーハの製造方法
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Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004189584A (ja) 2002-10-18 2004-07-08 Sumitomo Mitsubishi Silicon Corp シリコン単結晶インゴットの点欠陥分布を測定する方法
JP2010177494A (ja) 2009-01-30 2010-08-12 Covalent Materials Corp シリコンウェーハの熱処理方法
WO2010119614A1 (ja) 2009-04-13 2010-10-21 信越半導体株式会社 アニールウエーハおよびアニールウエーハの製造方法ならびにデバイスの製造方法
JP2013084840A (ja) 2011-10-12 2013-05-09 Shin Etsu Handotai Co Ltd 金属汚染評価方法及びエピタキシャルウェーハの製造方法
JP2013105914A (ja) 2011-11-14 2013-05-30 Shin Etsu Handotai Co Ltd 気相成長装置の清浄度評価方法
JP2014058414A (ja) 2012-09-14 2014-04-03 Jnc Corp 評価用シリコン単結晶の製造方法
JP2017103275A (ja) 2015-11-30 2017-06-08 株式会社Sumco シリコンウェーハの評価方法およびその利用

Also Published As

Publication number Publication date
TWI717628B (zh) 2021-02-01
EP3731263A1 (en) 2020-10-28
KR20200100783A (ko) 2020-08-26
WO2019123706A1 (ja) 2019-06-27
EP3731263A4 (en) 2021-09-08
US11538721B2 (en) 2022-12-27
US20210082774A1 (en) 2021-03-18
KR102463966B1 (ko) 2022-11-04
CN111480219A (zh) 2020-07-31
TW201929111A (zh) 2019-07-16
JP2019114633A (ja) 2019-07-11

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