JP7057122B2 - 金属汚染評価方法 - Google Patents

金属汚染評価方法 Download PDF

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Publication number
JP7057122B2
JP7057122B2 JP2017246190A JP2017246190A JP7057122B2 JP 7057122 B2 JP7057122 B2 JP 7057122B2 JP 2017246190 A JP2017246190 A JP 2017246190A JP 2017246190 A JP2017246190 A JP 2017246190A JP 7057122 B2 JP7057122 B2 JP 7057122B2
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lifetime
silicon wafer
metal contamination
concentration
evaluation method
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JP2019114633A5 (enExample
JP2019114633A (ja
Inventor
延恵 荒木
健 小野塚
知幸 石原
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GlobalWafers Japan Co Ltd
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GlobalWafers Japan Co Ltd
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Priority to JP2017246190A priority Critical patent/JP7057122B2/ja
Application filed by GlobalWafers Japan Co Ltd filed Critical GlobalWafers Japan Co Ltd
Priority to KR1020207021032A priority patent/KR102463966B1/ko
Priority to PCT/JP2018/029009 priority patent/WO2019123706A1/ja
Priority to CN201880082997.6A priority patent/CN111480219A/zh
Priority to EP18891783.5A priority patent/EP3731263A4/en
Priority to US16/956,282 priority patent/US11538721B2/en
Priority to TW107128807A priority patent/TWI717628B/zh
Publication of JP2019114633A publication Critical patent/JP2019114633A/ja
Publication of JP2019114633A5 publication Critical patent/JP2019114633A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6408—Fluorescence; Phosphorescence with measurement of decay time, time resolved fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32073—Corona discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Immunology (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2017246190A 2017-12-22 2017-12-22 金属汚染評価方法 Active JP7057122B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2017246190A JP7057122B2 (ja) 2017-12-22 2017-12-22 金属汚染評価方法
PCT/JP2018/029009 WO2019123706A1 (ja) 2017-12-22 2018-08-02 金属汚染評価方法
CN201880082997.6A CN111480219A (zh) 2017-12-22 2018-08-02 金属污染评价方法
EP18891783.5A EP3731263A4 (en) 2017-12-22 2018-08-02 METAL CONTAMINATION ASSESSMENT PROCESS
KR1020207021032A KR102463966B1 (ko) 2017-12-22 2018-08-02 금속 오염 평가 방법
US16/956,282 US11538721B2 (en) 2017-12-22 2018-08-02 Evaluation method of metal contamination
TW107128807A TWI717628B (zh) 2017-12-22 2018-08-17 金屬污染評價方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017246190A JP7057122B2 (ja) 2017-12-22 2017-12-22 金属汚染評価方法

Publications (3)

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JP2019114633A JP2019114633A (ja) 2019-07-11
JP2019114633A5 JP2019114633A5 (enExample) 2020-04-16
JP7057122B2 true JP7057122B2 (ja) 2022-04-19

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US (1) US11538721B2 (enExample)
EP (1) EP3731263A4 (enExample)
JP (1) JP7057122B2 (enExample)
KR (1) KR102463966B1 (enExample)
CN (1) CN111480219A (enExample)
TW (1) TWI717628B (enExample)
WO (1) WO2019123706A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7561498B2 (ja) * 2020-02-14 2024-10-04 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法
CN112366146A (zh) * 2020-11-05 2021-02-12 天津中环领先材料技术有限公司 一种晶圆片的寿命测试方法
CN112908876A (zh) * 2021-01-18 2021-06-04 上海新昇半导体科技有限公司 硅片金属污染测试方法及装置
JP7249395B1 (ja) * 2021-11-10 2023-03-30 株式会社Sumco 半導体試料の評価方法、半導体試料の評価装置および半導体ウェーハの製造方法

Citations (7)

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Publication number Priority date Publication date Assignee Title
JP2004189584A (ja) 2002-10-18 2004-07-08 Sumitomo Mitsubishi Silicon Corp シリコン単結晶インゴットの点欠陥分布を測定する方法
JP2010177494A (ja) 2009-01-30 2010-08-12 Covalent Materials Corp シリコンウェーハの熱処理方法
WO2010119614A1 (ja) 2009-04-13 2010-10-21 信越半導体株式会社 アニールウエーハおよびアニールウエーハの製造方法ならびにデバイスの製造方法
JP2013084840A (ja) 2011-10-12 2013-05-09 Shin Etsu Handotai Co Ltd 金属汚染評価方法及びエピタキシャルウェーハの製造方法
JP2013105914A (ja) 2011-11-14 2013-05-30 Shin Etsu Handotai Co Ltd 気相成長装置の清浄度評価方法
JP2014058414A (ja) 2012-09-14 2014-04-03 Jnc Corp 評価用シリコン単結晶の製造方法
JP2017103275A (ja) 2015-11-30 2017-06-08 株式会社Sumco シリコンウェーハの評価方法およびその利用

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GB0216184D0 (en) * 2002-07-12 2002-08-21 Aoti Operating Co Inc Detection method and apparatus
TWI231357B (en) 2002-10-18 2005-04-21 Sumitomo Mitsubishi Silicon Method for measuring defect-distribution in silicon monocrystal ingot
KR100500712B1 (ko) * 2002-12-16 2005-07-11 주식회사 실트론 실리콘웨이퍼의 금속 불순물 농도 측정 방법
JP2009266835A (ja) * 2008-04-21 2009-11-12 Sumco Corp シリコン単結晶の金属汚染評価方法
JP5439752B2 (ja) 2008-06-13 2014-03-12 信越半導体株式会社 汚染検出用モニターウェーハ、汚染検出方法及びエピタキシャルウェーハの製造方法
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JP5742742B2 (ja) * 2012-02-08 2015-07-01 信越半導体株式会社 金属汚染評価方法
JP5733245B2 (ja) 2012-03-16 2015-06-10 信越半導体株式会社 シリコン単結晶ウェーハの製造方法
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Patent Citations (7)

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Publication number Priority date Publication date Assignee Title
JP2004189584A (ja) 2002-10-18 2004-07-08 Sumitomo Mitsubishi Silicon Corp シリコン単結晶インゴットの点欠陥分布を測定する方法
JP2010177494A (ja) 2009-01-30 2010-08-12 Covalent Materials Corp シリコンウェーハの熱処理方法
WO2010119614A1 (ja) 2009-04-13 2010-10-21 信越半導体株式会社 アニールウエーハおよびアニールウエーハの製造方法ならびにデバイスの製造方法
JP2013084840A (ja) 2011-10-12 2013-05-09 Shin Etsu Handotai Co Ltd 金属汚染評価方法及びエピタキシャルウェーハの製造方法
JP2013105914A (ja) 2011-11-14 2013-05-30 Shin Etsu Handotai Co Ltd 気相成長装置の清浄度評価方法
JP2014058414A (ja) 2012-09-14 2014-04-03 Jnc Corp 評価用シリコン単結晶の製造方法
JP2017103275A (ja) 2015-11-30 2017-06-08 株式会社Sumco シリコンウェーハの評価方法およびその利用

Also Published As

Publication number Publication date
WO2019123706A1 (ja) 2019-06-27
KR20200100783A (ko) 2020-08-26
US20210082774A1 (en) 2021-03-18
US11538721B2 (en) 2022-12-27
TW201929111A (zh) 2019-07-16
CN111480219A (zh) 2020-07-31
JP2019114633A (ja) 2019-07-11
EP3731263A4 (en) 2021-09-08
TWI717628B (zh) 2021-02-01
EP3731263A1 (en) 2020-10-28
KR102463966B1 (ko) 2022-11-04

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