CN111480219A - 金属污染评价方法 - Google Patents

金属污染评价方法 Download PDF

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Publication number
CN111480219A
CN111480219A CN201880082997.6A CN201880082997A CN111480219A CN 111480219 A CN111480219 A CN 111480219A CN 201880082997 A CN201880082997 A CN 201880082997A CN 111480219 A CN111480219 A CN 111480219A
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China
Prior art keywords
silicon wafer
lifetime
metal contamination
concentration
evaluation method
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Pending
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CN201880082997.6A
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English (en)
Chinese (zh)
Inventor
荒木延惠
小野塚健
石原知幸
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GlobalWafers Japan Co Ltd
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GlobalWafers Japan Co Ltd
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Publication of CN111480219A publication Critical patent/CN111480219A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6408—Fluorescence; Phosphorescence with measurement of decay time, time resolved fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32073—Corona discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Immunology (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201880082997.6A 2017-12-22 2018-08-02 金属污染评价方法 Pending CN111480219A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017246190A JP7057122B2 (ja) 2017-12-22 2017-12-22 金属汚染評価方法
JP2017-246190 2017-12-22
PCT/JP2018/029009 WO2019123706A1 (ja) 2017-12-22 2018-08-02 金属汚染評価方法

Publications (1)

Publication Number Publication Date
CN111480219A true CN111480219A (zh) 2020-07-31

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Family Applications (1)

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CN201880082997.6A Pending CN111480219A (zh) 2017-12-22 2018-08-02 金属污染评价方法

Country Status (7)

Country Link
US (1) US11538721B2 (enExample)
EP (1) EP3731263A4 (enExample)
JP (1) JP7057122B2 (enExample)
KR (1) KR102463966B1 (enExample)
CN (1) CN111480219A (enExample)
TW (1) TWI717628B (enExample)
WO (1) WO2019123706A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112366146A (zh) * 2020-11-05 2021-02-12 天津中环领先材料技术有限公司 一种晶圆片的寿命测试方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7561498B2 (ja) * 2020-02-14 2024-10-04 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法
CN112908876A (zh) * 2021-01-18 2021-06-04 上海新昇半导体科技有限公司 硅片金属污染测试方法及装置
JP7249395B1 (ja) * 2021-11-10 2023-03-30 株式会社Sumco 半導体試料の評価方法、半導体試料の評価装置および半導体ウェーハの製造方法

Citations (9)

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KR20040054017A (ko) * 2002-12-16 2004-06-25 주식회사 실트론 실리콘웨이퍼의 금속 불순물 농도 측정 방법
JP2009266835A (ja) * 2008-04-21 2009-11-12 Sumco Corp シリコン単結晶の金属汚染評価方法
JP2011238656A (ja) * 2010-05-06 2011-11-24 Shin Etsu Handotai Co Ltd 金属汚染評価用シリコンウエーハ及び金属汚染評価用シリコンウエーハの製造方法
US20120001301A1 (en) * 2009-04-13 2012-01-05 Shin-Etsu Handotai Co., Ltd. Annealed wafer, method for producing annealed wafer and method for fabricating device
JP2013162094A (ja) * 2012-02-08 2013-08-19 Shin Etsu Handotai Co Ltd 金属汚染評価方法
JP2014058414A (ja) * 2012-09-14 2014-04-03 Jnc Corp 評価用シリコン単結晶の製造方法
TW201435984A (zh) * 2013-03-12 2014-09-16 Globalwafers Japan Co Ltd 飽和電壓估計方法及矽磊晶晶圓製造方法
JP2017103275A (ja) * 2015-11-30 2017-06-08 株式会社Sumco シリコンウェーハの評価方法およびその利用
TW201720972A (zh) * 2015-12-11 2017-06-16 世創電子材料公司 由單晶矽製成的半導體晶圓及其製備方法

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KR20040054017A (ko) * 2002-12-16 2004-06-25 주식회사 실트론 실리콘웨이퍼의 금속 불순물 농도 측정 방법
JP2009266835A (ja) * 2008-04-21 2009-11-12 Sumco Corp シリコン単結晶の金属汚染評価方法
US20120001301A1 (en) * 2009-04-13 2012-01-05 Shin-Etsu Handotai Co., Ltd. Annealed wafer, method for producing annealed wafer and method for fabricating device
JP2011238656A (ja) * 2010-05-06 2011-11-24 Shin Etsu Handotai Co Ltd 金属汚染評価用シリコンウエーハ及び金属汚染評価用シリコンウエーハの製造方法
JP2013162094A (ja) * 2012-02-08 2013-08-19 Shin Etsu Handotai Co Ltd 金属汚染評価方法
JP2014058414A (ja) * 2012-09-14 2014-04-03 Jnc Corp 評価用シリコン単結晶の製造方法
TW201435984A (zh) * 2013-03-12 2014-09-16 Globalwafers Japan Co Ltd 飽和電壓估計方法及矽磊晶晶圓製造方法
JP2017103275A (ja) * 2015-11-30 2017-06-08 株式会社Sumco シリコンウェーハの評価方法およびその利用
TW201720972A (zh) * 2015-12-11 2017-06-16 世創電子材料公司 由單晶矽製成的半導體晶圓及其製備方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112366146A (zh) * 2020-11-05 2021-02-12 天津中环领先材料技术有限公司 一种晶圆片的寿命测试方法

Also Published As

Publication number Publication date
WO2019123706A1 (ja) 2019-06-27
KR20200100783A (ko) 2020-08-26
US20210082774A1 (en) 2021-03-18
US11538721B2 (en) 2022-12-27
TW201929111A (zh) 2019-07-16
JP2019114633A (ja) 2019-07-11
EP3731263A4 (en) 2021-09-08
TWI717628B (zh) 2021-02-01
EP3731263A1 (en) 2020-10-28
KR102463966B1 (ko) 2022-11-04
JP7057122B2 (ja) 2022-04-19

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Application publication date: 20200731