JP7032139B2 - 磁気トンネル接合をパターニングするためのハードマスク - Google Patents
磁気トンネル接合をパターニングするためのハードマスク Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 38
- 229910052799 carbon Inorganic materials 0.000 claims description 38
- 239000011247 coating layer Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 25
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- 239000010941 cobalt Substances 0.000 claims description 12
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
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- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
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- 239000000395 magnesium oxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
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- 238000011282 treatment Methods 0.000 description 24
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 125000000123 silicon containing inorganic group Chemical group 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Drying Of Semiconductors (AREA)
- Magnetic Heads (AREA)
Description
Claims (13)
- 膜スタックであって、該膜スタックは、
磁気トンネル接合層と、
前記磁気トンネル接合層上に配置された誘電体キャップ層と、
前記誘電体キャップ層上に配置されたエッチング停止層と、
前記エッチング停止層上に配置された導電性ハードマスク層と、
前記導電性ハードマスク層上に配置された誘電体ハードマスク層と、
前記誘電体ハードマスク層上に配置されたスピンオンカーボン層であって、50nmと250nmとの間のピッチを有する磁気トンネル接合デバイスを生成するようにパターニングされている、スピンオンカーボン層と、
前記スピンオンカーボン層上に配置された反射防止被覆層と
を備え、前記導電性ハードマスク層の側壁プロファイルが、前記エッチング停止層と前記導電性ハードマスク層との界面に対して平行な基準面に対して85°よりも大きい側壁角を有する、膜スタック。 - 底部電極を備える基板であって、前記膜スタックの前記磁気トンネル接合層が前記基板上に配置されている基板をさらに備える、請求項1に記載の膜スタック。
- 前記反射防止被覆層上に配置されたフォトレジスト層をさらに備える、請求項2に記載の膜スタック。
- 前記誘電体キャップ層は、酸化マグネシウム材料、酸化アルミニウム材料、酸化亜鉛材料、酸化チタン材料、酸化タンタル材料、窒化タンタル材料、並びにこれらの組み合わせ及び混合物のうちの1つ以上から形成されている、請求項1に記載の膜スタック。
- 前記エッチング停止層は、ルテニウム含有材料、タングステン含有材料、タンタル含有材料、白金含有材料、ニッケル含有材料、コバルト含有材料、並びにこれらの組み合わせ及び混合物のうちの1つ以上から形成されている、請求項1に記載の膜スタック。
- 前記導電性ハードマスク層は、タンタル含有材料、窒化タンタル含有材料、チタン含有材料、窒化チタン含有材料、タングステン含有材料、窒化タングステン含有材料、並びにこれらの組み合わせ及び混合物のうちの1つ以上から形成されている、請求項1に記載の膜スタック。
- 前記誘電体ハードマスク層は、酸化ケイ素含有材料、酸化アルミニウム含有材料、窒化ケイ素含有材料、並びにこれらの組み合わせ及び混合物のうちの1つ以上から形成されている、請求項1に記載の膜スタック。
- 前記誘電体キャップ層は、8Åと12Åの間の厚さを有する、請求項1に記載の膜スタック。
- 磁気トンネル接合層と、
前記磁気トンネル接合層上に配置された、5Åと20Åの間の厚さを有する誘電体キャップ層と、
前記誘電体キャップ層上に配置された、5Åと50Åの間の厚さを有するエッチング停止層と、
前記エッチング停止層上に配置された、400Åと1000Åの間の厚さを有する導電性ハードマスク層と、
前記導電性ハードマスク層上に配置された誘電体ハードマスク層と、
前記誘電体ハードマスク層上に配置されたスピンオンカーボン層と、
前記スピンオンカーボン層上に配置された反射防止被覆層と
を備え、
前記導電性ハードマスク層の側壁プロファイルが、前記エッチング停止層と前記導電性ハードマスク層との界面に対して平行な基準面に対して85°よりも大きい側壁角を有する、膜スタック。 - 前記誘電体ハードマスク層は、400Åと1000Åの間の厚さを有する、請求項9に記載の膜スタック。
- 前記スピンオンカーボン層は、500Åと2500Åの間の厚さを有する、請求項9に記載の膜スタック。
- 前記側壁角は、100nmと400nmの間のピッチを有する磁気トンネル接合デバイス上で達成される、請求項9に記載の膜スタック。
- 膜スタックをエッチングする方法であって、
フォトレジスト層をパターニングして膜スタックの反射防止被覆層をエッチングすることと、
前記反射防止被覆層を第1のマスクとして用いて前記膜スタックのスピンオンカーボン層をエッチングすることであって、前記スピンオンカーボン層が、50nmと250nmとの間のピッチを有する磁気トンネル接合デバイスを生成するようにパターニングされている、スピンオンカーボン層をエッチングすることと、
前記スピンオンカーボン層を第2のマスクとして用いて前記膜スタックの誘電体ハードマスク層をエッチングすることと、
前記誘電体ハードマスク層を第3のマスクとして用いて前記膜スタックの導電性ハードマスク層をエッチングすることと、
前記導電性ハードマスク層を第4のマスクとして用いて前記膜スタックのエッチング停止層をエッチングし、前記膜スタックの誘電体キャップ層を露出することとを含み、前記誘電体キャップ層は磁気トンネル接合層上に配置されており、
前記導電性ハードマスク層をエッチングすることによって、前記導電性ハードマスク層の側壁が、前記エッチング停止層と前記導電性ハードマスク層との界面に対して平行な基準面に対して85°よりも大きい側壁角を有する結果となる、方法。
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US14/755,964 US20160351799A1 (en) | 2015-05-30 | 2015-06-30 | Hard mask for patterning magnetic tunnel junctions |
PCT/US2016/031941 WO2016195946A1 (en) | 2015-05-30 | 2016-05-11 | Hard mask for patterning magnetic tunnel junctions |
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JP (2) | JP7032139B2 (ja) |
KR (1) | KR102578718B1 (ja) |
CN (1) | CN107660315A (ja) |
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JP2021184473A (ja) * | 2015-05-30 | 2021-12-02 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | 磁気トンネル接合をパターニングするためのハードマスク |
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TW202205706A (zh) | 2022-02-01 |
KR102578718B1 (ko) | 2023-09-15 |
TWI737607B (zh) | 2021-09-01 |
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US20160351799A1 (en) | 2016-12-01 |
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