JP7014535B2 - 導電性ボール及び電子装置とそれらの製造方法 - Google Patents

導電性ボール及び電子装置とそれらの製造方法 Download PDF

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JP7014535B2
JP7014535B2 JP2017133267A JP2017133267A JP7014535B2 JP 7014535 B2 JP7014535 B2 JP 7014535B2 JP 2017133267 A JP2017133267 A JP 2017133267A JP 2017133267 A JP2017133267 A JP 2017133267A JP 7014535 B2 JP7014535 B2 JP 7014535B2
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layer
solder
tin
connection pad
conductive ball
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JP2019013960A5 (enExample
JP2019013960A (ja
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啓 村山
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to US16/023,500 priority patent/US10446513B2/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
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    • H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
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    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
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    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
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    • H01L2224/81815—Reflow soldering
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
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JP7041477B2 (ja) * 2017-07-05 2022-03-24 新光電気工業株式会社 導電性ボール及び電子装置とそれらの製造方法
US11145614B2 (en) * 2019-10-18 2021-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
KR102461313B1 (ko) * 2020-05-19 2022-11-01 엠케이전자 주식회사 리버스 리플로우용 심재를 이용한 반도체 패키지
US12313478B2 (en) * 2021-10-01 2025-05-27 Sensitronics, LLC Low drift force sensor with capacitive capability
JP2024026932A (ja) * 2022-08-16 2024-02-29 日立Astemo株式会社 電子装置、電子装置の製造方法

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JP2007075856A (ja) 2005-09-14 2007-03-29 Nippon Steel Materials Co Ltd Ｃｕコアボール
JP2010099736A (ja) 2008-09-25 2010-05-06 Hitachi Metals Ltd 耐落下衝撃特性に優れた接続端子用ボールおよび接続端子ならびに電子部品
JP2013031864A (ja) 2011-08-01 2013-02-14 Hitachi Metals Ltd はんだボールおよびはんだボールを用いた半導体装置
JP2015186826A (ja) 2015-06-05 2015-10-29 日立金属株式会社 はんだボールおよび半導体装置
JP2016106033A (ja) 2007-10-19 2016-06-16 株式会社日本スペリア社 はんだ継手

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JP2015072996A (ja) 2013-10-02 2015-04-16 新光電気工業株式会社 半導体装置
TWI637465B (zh) * 2017-06-03 2018-10-01 Siliconware Precision Industries Co., Ltd. 電子封裝件及其製法

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JP2007075856A (ja) 2005-09-14 2007-03-29 Nippon Steel Materials Co Ltd Ｃｕコアボール
JP2016106033A (ja) 2007-10-19 2016-06-16 株式会社日本スペリア社 はんだ継手
JP2010099736A (ja) 2008-09-25 2010-05-06 Hitachi Metals Ltd 耐落下衝撃特性に優れた接続端子用ボールおよび接続端子ならびに電子部品
JP2013031864A (ja) 2011-08-01 2013-02-14 Hitachi Metals Ltd はんだボールおよびはんだボールを用いた半導体装置
JP2015186826A (ja) 2015-06-05 2015-10-29 日立金属株式会社 はんだボールおよび半導体装置

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