JP7005896B2 - ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法 - Google Patents

ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法 Download PDF

Info

Publication number
JP7005896B2
JP7005896B2 JP2016256657A JP2016256657A JP7005896B2 JP 7005896 B2 JP7005896 B2 JP 7005896B2 JP 2016256657 A JP2016256657 A JP 2016256657A JP 2016256657 A JP2016256657 A JP 2016256657A JP 7005896 B2 JP7005896 B2 JP 7005896B2
Authority
JP
Japan
Prior art keywords
flat plate
sputtering
target
gas flow
targets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016256657A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018109206A (ja
JP2018109206A5 (https=
Inventor
孝志 小庄
英生 高見
祐一郎 中村
幹雄 武智
智広 三上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
Original Assignee
JX Nippon Mining and Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp
Priority to JP2016256657A priority Critical patent/JP7005896B2/ja
Priority to PCT/JP2017/044448 priority patent/WO2018123550A1/ja
Priority to SG10202105751VA priority patent/SG10202105751VA/en
Priority to CN201780078453.8A priority patent/CN110100042B/zh
Priority to TW106145564A priority patent/TWI660060B/zh
Publication of JP2018109206A publication Critical patent/JP2018109206A/ja
Publication of JP2018109206A5 publication Critical patent/JP2018109206A5/ja
Priority to JP2021087172A priority patent/JP2021127524A/ja
Application granted granted Critical
Publication of JP7005896B2 publication Critical patent/JP7005896B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
JP2016256657A 2016-12-28 2016-12-28 ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法 Active JP7005896B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2016256657A JP7005896B2 (ja) 2016-12-28 2016-12-28 ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法
SG10202105751VA SG10202105751VA (en) 2016-12-28 2017-12-11 Gas flow sputtering device and method for producing sputtering target raw material
CN201780078453.8A CN110100042B (zh) 2016-12-28 2017-12-11 气流溅射装置以及溅射靶原料的制造方法
PCT/JP2017/044448 WO2018123550A1 (ja) 2016-12-28 2017-12-11 ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法
TW106145564A TWI660060B (zh) 2016-12-28 2017-12-25 氣流濺鍍裝置及濺鍍靶材原料的製造方法
JP2021087172A JP2021127524A (ja) 2016-12-28 2021-05-24 ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016256657A JP7005896B2 (ja) 2016-12-28 2016-12-28 ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021087172A Division JP2021127524A (ja) 2016-12-28 2021-05-24 ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法

Publications (3)

Publication Number Publication Date
JP2018109206A JP2018109206A (ja) 2018-07-12
JP2018109206A5 JP2018109206A5 (https=) 2019-08-22
JP7005896B2 true JP7005896B2 (ja) 2022-01-24

Family

ID=62708037

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016256657A Active JP7005896B2 (ja) 2016-12-28 2016-12-28 ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法
JP2021087172A Pending JP2021127524A (ja) 2016-12-28 2021-05-24 ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2021087172A Pending JP2021127524A (ja) 2016-12-28 2021-05-24 ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法

Country Status (5)

Country Link
JP (2) JP7005896B2 (https=)
CN (1) CN110100042B (https=)
SG (1) SG10202105751VA (https=)
TW (1) TWI660060B (https=)
WO (1) WO2018123550A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004183022A (ja) 2002-12-02 2004-07-02 Ulvac Japan Ltd ターゲット装置及びスパッタリング装置
JP2009066497A (ja) 2007-09-12 2009-04-02 Bridgestone Corp 光触媒酸化チタン薄膜及びその製造方法
JP2012144793A (ja) 2011-01-13 2012-08-02 Sumitomo Heavy Ind Ltd ターゲット、およびこれを備えた成膜装置
JP2013147711A (ja) 2012-01-20 2013-08-01 Renesas Electronics Corp 気相成長装置
WO2013136962A1 (ja) 2012-03-15 2013-09-19 Jx日鉱日石金属株式会社 磁性材スパッタリングターゲット及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU4503696A (en) * 1995-05-11 1996-11-29 Materials Research Corporation Sputtering apparatus with isolated coolant and sputtering ta rget therefor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004183022A (ja) 2002-12-02 2004-07-02 Ulvac Japan Ltd ターゲット装置及びスパッタリング装置
JP2009066497A (ja) 2007-09-12 2009-04-02 Bridgestone Corp 光触媒酸化チタン薄膜及びその製造方法
JP2012144793A (ja) 2011-01-13 2012-08-02 Sumitomo Heavy Ind Ltd ターゲット、およびこれを備えた成膜装置
JP2013147711A (ja) 2012-01-20 2013-08-01 Renesas Electronics Corp 気相成長装置
WO2013136962A1 (ja) 2012-03-15 2013-09-19 Jx日鉱日石金属株式会社 磁性材スパッタリングターゲット及びその製造方法

Also Published As

Publication number Publication date
JP2021127524A (ja) 2021-09-02
TW201827632A (zh) 2018-08-01
TWI660060B (zh) 2019-05-21
CN110100042A (zh) 2019-08-06
JP2018109206A (ja) 2018-07-12
CN110100042B (zh) 2021-12-07
SG10202105751VA (en) 2021-07-29
WO2018123550A1 (ja) 2018-07-05

Similar Documents

Publication Publication Date Title
US8197894B2 (en) Methods of forming sputtering targets
US20070240977A1 (en) Sputtering with cooled target
US20100040202A1 (en) Stationary X-Ray Target and Methods for Manufacturing Same
US8016982B2 (en) Sputtering apparatus and sputtering method
US11515132B2 (en) Physical vapor deposition processing systems target cooling
CN106048545A (zh) 磁性材料溅射靶及其制造方法
CN104213076A (zh) Pvd与hipims制备超硬dlc涂层方法及设备
JP2007291524A (ja) スパッター源用ターゲット
US20170084434A1 (en) Diffusion-bonded sputter target assembly and method of manufacturing
JP6858365B2 (ja) ガスフロースパッタリング装置、ガスフロースパッタ用ターゲット及びスパッタリングターゲット原料の製造方法
WO2007024428A2 (en) Monolithic sputter target backing plate with integrated cooling passages
JP7005896B2 (ja) ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法
US10381203B2 (en) Backing plate obtained by diffusion-bonding anticorrosive metal and Mo or Mo alloy, and sputtering target-backing plate assembly provided with said backing plate
JP4639764B2 (ja) 円筒状ターゲット及び成膜方法
US20150034481A1 (en) Fastening member and vacuum device
US20150303042A1 (en) Sputtering apparatus
US20230227963A1 (en) Preparation method of niobium diselenide film with ultra-low friction and low electrical noise under sliding electrical contact in vacuum
JP5246017B2 (ja) スパッタリング装置
US20260043127A1 (en) Magnetron sputtering apparatus
CN204198841U (zh) 一种pvd与hipims制备超硬dlc涂层设备
KR20140108349A (ko) 스퍼터링 타깃
WO2004023515A1 (de) Zerstäubungskatode, herstellverfahren sowie katode hierzu
DAHLGREN TREATISE ON MATERIALS SCIENCE AND TECHNOLOGY, VOL. 19A
JP2011137215A (ja) 平行平板型プラズマｃｖｄ装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190513

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190614

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200225

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200825

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200917

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20210224

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210524

C60 Trial request (containing other claim documents, opposition documents)

Free format text: JAPANESE INTERMEDIATE CODE: C60

Effective date: 20210524

C11 Written invitation by the commissioner to file amendments

Free format text: JAPANESE INTERMEDIATE CODE: C11

Effective date: 20210601

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20210715

C21 Notice of transfer of a case for reconsideration by examiners before appeal proceedings

Free format text: JAPANESE INTERMEDIATE CODE: C21

Effective date: 20210720

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210921

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211012

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211130

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211220

R151 Written notification of patent or utility model registration

Ref document number: 7005896

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

R154 Certificate of patent or utility model (reissue)

Free format text: JAPANESE INTERMEDIATE CODE: R154

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250