WO2004023515A1 - Zerstäubungskatode, herstellverfahren sowie katode hierzu - Google Patents
Zerstäubungskatode, herstellverfahren sowie katode hierzu Download PDFInfo
- Publication number
- WO2004023515A1 WO2004023515A1 PCT/CH2003/000580 CH0300580W WO2004023515A1 WO 2004023515 A1 WO2004023515 A1 WO 2004023515A1 CH 0300580 W CH0300580 W CH 0300580W WO 2004023515 A1 WO2004023515 A1 WO 2004023515A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- friction
- reducing layer
- target
- layer
- cathode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
Definitions
- the invention relates to a sputtering cathode, in particular according to the magnetron principle, according to claim 1, a method for manufacturing according to claim 9, a target according to claim 17 and a vacuum coating system according to claim 22.
- Vacuum coating systems for plasma applications consisting essentially of a vacuum recipient which receives substrates to be coated and one or more sputtering cathodes. These cathodes in turn are composed essentially of a target consisting of the material to be sputtered, a cooling contact body arranged behind it and a cathode base body which a cooling device, for. B. has a cooling circuit and to which the cooling contact body and the target are attached.
- target is understood to mean both one-piece targets (monoblock target) and composite targets (compound targets), in which the actual atomizing material is attached (bonded) to a back plate, eg. B. by soldering, gluing, welding, pouring or another known type.
- a sputtering cathode further comprises a magnet system, which is responsible for guiding the plasma on the target surface, and further devices and (electrical) equipment, which, however, are not relevant for further consideration.
- a magnet system which is responsible for guiding the plasma on the target surface
- further devices and (electrical) equipment which, however, are not relevant for further consideration.
- metal foils or thin metal sheets as cooling contact bodies which, on the one hand, closes off a cavity in the cathode main body which is designed as a trough or channel and which, on the other hand, contacts the rear of the target.
- the pressure of the cooling medium presses the metal foil against the back of the target and ensures even heat transfer.
- the cooling circuit is relaxed (kept depressurized).
- DE 40 15 388 AI shows an example of such a device.
- a layer of material with a low sputtering rate is applied between the back of the target and the cooling contact body, which is intended to prevent sputtering.
- the problem of the different thermal expansion coefficients of the cooling plate / metal foil (e.g. copper) compared to the target (e.g. aluminum) remains unsolved in the prior art. These cause the two metal surfaces to rub against one another during operation. These cyclical lateral relative movements are most noticeable at the edge of the cooling plate / film and target, while they are minimal in the middle of the surface. Friction welding (cold welding) can occur, particularly in the areas of the strongest movement.
- the heat flow from the target to the cooling circuit may only be slightly impaired, in particular the surface homogeneity of the heat conduction.
- the friction-reducing layer must be abrasion-resistant, evenly thin and hard.
- the layer should ideally not mean any contamination for the operation of the recipient, i.e. there must be no outgassing and long-term changes to the layer.
- an atomizing cathode on the contact surface between the cooling contact body and the target, a friction-reducing layer is applied.
- this can consist of refractory metals, whereby “refractory” in the technically known sense means insensitive, heat-resistant, fire-resistant (definition see, for example, Römpps Chemie Lexikon, Frankhsche Verlag Stuttgart). These include examples, but not conclusively Cr, Mo, Ta, Nb, W or their alloys, hard-material layers based on the metals of the Build groups 4a to 6a of the periodic table.
- the third group of friction-reducing layers also includes the group of amorphous diamond-like carbon layers (DLC, diamond-like carbon). Depending on the application, these can be pure DLC layers or metal-containing DLC layers.
- DLC amorphous diamond-like carbon layers
- the thickness of the friction-reducing layer is 0.1 to 5 ⁇ m, preferably 0.5 to 2.5 ⁇ m.
- One method according to the invention is to provide the contact surface between the cooling contact body and the target of an atomizing cathode with a friction-reducing layer.
- a friction-reducing layer can consist of refractory metals, preferably Cr, Mo, Ta, Nb, W or their alloys.
- the coating methods include PVD processes (physical vapor deposit), including sputtering, in particular magnetron sputtering, as a reactive process with corresponding nitrogen, carbon or oxygen-containing gas compounds. Vapor deposition processes, also reactive, are also considered, as are cathodic are processes.
- CVD chemical vapor deposition
- plasma support also with plasma support.
- the back of the target is subjected to a plasma-assisted pretreatment step, preferably a plasma cleaning or plasma etching step, before the friction-reducing layer is applied. This results in further advantages, particularly with regard to the adhesiveness and durability of the layer.
- the friction-reducing layer is applied to the back of the target.
- the cooling contact body can alternatively or additionally be equipped with such a friction-reducing layer.
- the advantage of a target coated according to the invention is that all of the above requirements are met and, furthermore, compatibility with non-coated targets is ensured, that is to say that no changes to the cathode configurations are necessary when used in a coating system.
- the invention is subsequently explained for example and with reference to the schematic figure 1.
- This shows a preferred variant with a coated target.
- the basic cathode body 1 is shown schematically in section. It is trough-shaped and comprises an area 2 which is filled with coolant which is circulated during operation.
- the trough is closed in a fluid-tight and vacuum-tight manner by the cooling contact body 3, which can be designed as a rigid or semi-rigid plate or metal foil.
- the target 4 is shown spaced from the cooling contact body, which corresponds to an assembly situation.
- the layer 5 according to the invention is applied on the side facing the cooling contact body.
- the target 4 is releasably connected to the layer 5 on the cathode base body 1 by suitable fastening means (not shown) such that the target held in position against the cooling contact body has an intimate heat-conducting connection to the cooling contact body 3.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/525,993 US20060163059A1 (en) | 2002-09-03 | 2003-08-27 | Sputtering cathode, production method and corresponding cathode |
EP03793554A EP1537597A1 (de) | 2002-09-03 | 2003-08-27 | Zerst ubungskatode, herstellverfahren sowie katode hierzu |
AU2003250728A AU2003250728A1 (en) | 2002-09-03 | 2003-08-27 | Sputtering cathode, production method and corresponding cathode |
JP2004533148A JP2005537391A (ja) | 2002-09-03 | 2003-08-27 | スパッタ陰極、製造方法およびこれに関する陰極 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1501/02 | 2002-09-03 | ||
CH15012002 | 2002-09-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004023515A1 true WO2004023515A1 (de) | 2004-03-18 |
Family
ID=31954544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CH2003/000580 WO2004023515A1 (de) | 2002-09-03 | 2003-08-27 | Zerstäubungskatode, herstellverfahren sowie katode hierzu |
Country Status (6)
Country | Link |
---|---|
US (1) | US20060163059A1 (de) |
EP (1) | EP1537597A1 (de) |
JP (1) | JP2005537391A (de) |
AU (1) | AU2003250728A1 (de) |
TW (1) | TW200404103A (de) |
WO (1) | WO2004023515A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8123107B2 (en) * | 2004-05-25 | 2012-02-28 | Praxair S.T. Technology, Inc. | Method for forming sputter target assemblies |
EP2726642A4 (de) * | 2011-06-30 | 2014-11-05 | View Inc | Sputtertarget und sputteringverfahren |
DE102013011074A1 (de) * | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag | An eine indirekte Kühlvorrichtung angepasstes Target mit Kühlplatte |
RU2717129C1 (ru) * | 2019-09-16 | 2020-03-18 | федеральное государственное бюджетное образовательное учреждение высшего образования "Ульяновский государственный технический университет" | Способ получения многослойного покрытия для режущего инструмента |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4209375A (en) * | 1979-08-02 | 1980-06-24 | The United States Of America As Represented By The United States Department Of Energy | Sputter target |
DE4015388A1 (de) * | 1990-05-14 | 1991-11-21 | Leybold Ag | Kathodenzerstaeubungsvorrichtung |
WO1992017622A1 (en) * | 1991-04-08 | 1992-10-15 | Tosoh Smd, Inc. | Thermally compatible sputter target and backing plate assembly |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3815457A1 (de) * | 1988-05-06 | 1989-11-16 | Sipra Patent Beteiligung | Strickmaschine |
JPH01290765A (ja) * | 1988-05-16 | 1989-11-22 | Toshiba Corp | スパッタリングターゲット |
US6071389A (en) * | 1998-08-21 | 2000-06-06 | Tosoh Smd, Inc. | Diffusion bonded sputter target assembly and method of making |
WO2002020298A2 (en) * | 2000-09-05 | 2002-03-14 | Tara Investments, Llc | System and method for power generation |
-
2003
- 2003-08-27 EP EP03793554A patent/EP1537597A1/de not_active Withdrawn
- 2003-08-27 US US10/525,993 patent/US20060163059A1/en not_active Abandoned
- 2003-08-27 JP JP2004533148A patent/JP2005537391A/ja not_active Withdrawn
- 2003-08-27 WO PCT/CH2003/000580 patent/WO2004023515A1/de not_active Application Discontinuation
- 2003-08-27 AU AU2003250728A patent/AU2003250728A1/en not_active Abandoned
- 2003-09-01 TW TW092124086A patent/TW200404103A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4209375A (en) * | 1979-08-02 | 1980-06-24 | The United States Of America As Represented By The United States Department Of Energy | Sputter target |
DE4015388A1 (de) * | 1990-05-14 | 1991-11-21 | Leybold Ag | Kathodenzerstaeubungsvorrichtung |
WO1992017622A1 (en) * | 1991-04-08 | 1992-10-15 | Tosoh Smd, Inc. | Thermally compatible sputter target and backing plate assembly |
Also Published As
Publication number | Publication date |
---|---|
AU2003250728A1 (en) | 2004-03-29 |
TW200404103A (en) | 2004-03-16 |
EP1537597A1 (de) | 2005-06-08 |
US20060163059A1 (en) | 2006-07-27 |
JP2005537391A (ja) | 2005-12-08 |
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