CN110100042B - 气流溅射装置以及溅射靶原料的制造方法 - Google Patents

气流溅射装置以及溅射靶原料的制造方法 Download PDF

Info

Publication number
CN110100042B
CN110100042B CN201780078453.8A CN201780078453A CN110100042B CN 110100042 B CN110100042 B CN 110100042B CN 201780078453 A CN201780078453 A CN 201780078453A CN 110100042 B CN110100042 B CN 110100042B
Authority
CN
China
Prior art keywords
sputtering
target
gas flow
flat plate
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780078453.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN110100042A (zh
Inventor
小庄孝志
高见英生
中村祐一郎
武智幹雄
三上智广
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
Original Assignee
JX Nippon Mining and Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp
Publication of CN110100042A publication Critical patent/CN110100042A/zh
Application granted granted Critical
Publication of CN110100042B publication Critical patent/CN110100042B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851Coating a support with a magnetic layer by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
CN201780078453.8A 2016-12-28 2017-12-11 气流溅射装置以及溅射靶原料的制造方法 Active CN110100042B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-256657 2016-12-28
JP2016256657A JP7005896B2 (ja) 2016-12-28 2016-12-28 ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法
PCT/JP2017/044448 WO2018123550A1 (ja) 2016-12-28 2017-12-11 ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法

Publications (2)

Publication Number Publication Date
CN110100042A CN110100042A (zh) 2019-08-06
CN110100042B true CN110100042B (zh) 2021-12-07

Family

ID=62708037

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780078453.8A Active CN110100042B (zh) 2016-12-28 2017-12-11 气流溅射装置以及溅射靶原料的制造方法

Country Status (5)

Country Link
JP (2) JP7005896B2 (https=)
CN (1) CN110100042B (https=)
SG (1) SG10202105751VA (https=)
TW (1) TWI660060B (https=)
WO (1) WO2018123550A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102586745A (zh) * 2011-01-13 2012-07-18 住友重机械工业株式会社 靶及具备该靶的成膜装置
JP2013147711A (ja) * 2012-01-20 2013-08-01 Renesas Electronics Corp 気相成長装置
WO2013136962A1 (ja) * 2012-03-15 2013-09-19 Jx日鉱日石金属株式会社 磁性材スパッタリングターゲット及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU4503696A (en) * 1995-05-11 1996-11-29 Materials Research Corporation Sputtering apparatus with isolated coolant and sputtering ta rget therefor
JP2004183022A (ja) 2002-12-02 2004-07-02 Ulvac Japan Ltd ターゲット装置及びスパッタリング装置
JP2009066497A (ja) 2007-09-12 2009-04-02 Bridgestone Corp 光触媒酸化チタン薄膜及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102586745A (zh) * 2011-01-13 2012-07-18 住友重机械工业株式会社 靶及具备该靶的成膜装置
JP2013147711A (ja) * 2012-01-20 2013-08-01 Renesas Electronics Corp 気相成長装置
WO2013136962A1 (ja) * 2012-03-15 2013-09-19 Jx日鉱日石金属株式会社 磁性材スパッタリングターゲット及びその製造方法

Also Published As

Publication number Publication date
JP2021127524A (ja) 2021-09-02
TW201827632A (zh) 2018-08-01
TWI660060B (zh) 2019-05-21
CN110100042A (zh) 2019-08-06
JP2018109206A (ja) 2018-07-12
SG10202105751VA (en) 2021-07-29
JP7005896B2 (ja) 2022-01-24
WO2018123550A1 (ja) 2018-07-05

Similar Documents

Publication Publication Date Title
JP5324759B2 (ja) 改善されたpvdターゲット
US10685821B2 (en) Physical vapor deposition processing systems target cooling
US20120118733A1 (en) Magnetron sputtering apparatus
US20070045108A1 (en) Monolithic sputter target backing plate with integrated cooling passages
US20120055787A1 (en) Sputtering Target and Method of Processing a Sputtering Target
CN110088352B (zh) 气流溅射装置、气流溅射用靶以及溅射靶原料的制造方法
CN110100042B (zh) 气流溅射装置以及溅射靶原料的制造方法
KR20120102430A (ko) Cigs 태양전지의 배면전극용 몰리브덴 스퍼터링 타겟 제조방법
KR101122307B1 (ko) 스퍼터링 타겟용 알루미늄 소결체 제조방법
JP4639764B2 (ja) 円筒状ターゲット及び成膜方法
US20150034481A1 (en) Fastening member and vacuum device
US9368331B2 (en) Sputtering apparatus
WO2008150686A1 (en) Bonding method for cylindrical target
JP2013129871A (ja) マグネトロンスパッタリングカソード及びこれを備えたスパッタリング装置
JP2013001943A (ja) スパッタリング装置
JP5246017B2 (ja) スパッタリング装置
US20110014394A1 (en) film depositing apparatus and method
JPS59170268A (ja) スパツタ・タ−ゲツトの冷却方法
US10100399B2 (en) Cathode assembly
KR20130047302A (ko) 고효율 스퍼터링 장치
CN105039918A (zh) 一种在石墨工件表面沉积金属扩散层的方法
JP2006336083A (ja) 多段カソード電極機構
JP2006131968A (ja) 円筒状マグネトロンスパッタ装置
KR20120072072A (ko) 고효율 이형상 스퍼터링 타겟
JP2008303453A (ja) スパッタリング装置のマルチカソード構造

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant