JP6995523B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6995523B2
JP6995523B2 JP2017140493A JP2017140493A JP6995523B2 JP 6995523 B2 JP6995523 B2 JP 6995523B2 JP 2017140493 A JP2017140493 A JP 2017140493A JP 2017140493 A JP2017140493 A JP 2017140493A JP 6995523 B2 JP6995523 B2 JP 6995523B2
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insulator
oxide
film
conductor
transistor
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JP2018133550A (ja
JP2018133550A5 (enExample
Inventor
靖正 山根
求 倉田
涼太 方堂
貴久 石山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2017140493A 2016-07-26 2017-07-20 半導体装置 Active JP6995523B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016146342 2016-07-26
JP2016146342 2016-07-26
JP2017026908 2017-02-16
JP2017026908 2017-02-16

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JP2018133550A JP2018133550A (ja) 2018-08-23
JP2018133550A5 JP2018133550A5 (enExample) 2020-08-20
JP6995523B2 true JP6995523B2 (ja) 2022-01-14

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US (1) US10236390B2 (enExample)
JP (1) JP6995523B2 (enExample)
KR (2) KR102613288B1 (enExample)
CN (2) CN115799342A (enExample)
TW (1) TWI731121B (enExample)
WO (1) WO2018020350A1 (enExample)

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TWI737665B (zh) * 2016-07-01 2021-09-01 日商半導體能源硏究所股份有限公司 半導體裝置以及半導體裝置的製造方法
KR102613288B1 (ko) * 2016-07-26 2023-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN111316448A (zh) * 2017-11-09 2020-06-19 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
JPWO2019166921A1 (ja) 2018-03-02 2021-02-12 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN111937161A (zh) * 2018-04-04 2020-11-13 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
US20210242207A1 (en) * 2018-05-18 2021-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
JP2020047732A (ja) * 2018-09-18 2020-03-26 キオクシア株式会社 磁気記憶装置
JPWO2020084415A1 (ja) * 2018-10-26 2021-10-28 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11211461B2 (en) 2018-12-28 2021-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US11289475B2 (en) * 2019-01-25 2022-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
KR102811827B1 (ko) * 2019-04-12 2025-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP7550759B2 (ja) * 2019-07-12 2024-09-13 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11349023B2 (en) * 2019-10-01 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integration of p-channel and n-channel E-FET III-V devices without parasitic channels
KR102819716B1 (ko) * 2020-06-12 2025-06-13 삼성전자주식회사 3차원 반도체 장치 및 반도체 장치의 제조방법
JP7744260B2 (ja) * 2022-02-15 2025-09-25 キオクシア株式会社 半導体装置
JPWO2023242664A1 (enExample) * 2022-06-17 2023-12-21
WO2024154036A1 (ja) * 2023-01-20 2024-07-25 株式会社半導体エネルギー研究所 半導体装置

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JP2018133550A (ja) 2018-08-23
CN115799342A (zh) 2023-03-14
CN109478514A (zh) 2019-03-15
KR20220080017A (ko) 2022-06-14
WO2018020350A1 (en) 2018-02-01
US20180033892A1 (en) 2018-02-01
TW201816988A (zh) 2018-05-01
KR102613288B1 (ko) 2023-12-12
US10236390B2 (en) 2019-03-19
KR20190032414A (ko) 2019-03-27
TWI731121B (zh) 2021-06-21

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