JP6987448B2 - 小径ウェーハの製造方法 - Google Patents
小径ウェーハの製造方法 Download PDFInfo
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- JP6987448B2 JP6987448B2 JP2017218842A JP2017218842A JP6987448B2 JP 6987448 B2 JP6987448 B2 JP 6987448B2 JP 2017218842 A JP2017218842 A JP 2017218842A JP 2017218842 A JP2017218842 A JP 2017218842A JP 6987448 B2 JP6987448 B2 JP 6987448B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02035—Shaping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/021—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by drilling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
Description
11a 第1面(一方の面)
11b 第2面(他方の面)
11c ノッチ
13,13a 第1保護部材
15,15a 第2保護部材
17 切り出し予定ライン
19 移動予定ライン
21 目印形成予定ライン
23 小径ウェーハ
23a 第1面(一方の面)
23b 第2面(他方の面)
23c 目印
2 レーザ照射ユニット
4 砥石
4a 側面
6 コアドリル
8 レーザ照射ユニット
L1,L2 レーザビーム
Claims (9)
- 一方の面と他方の面とを有し該一方の面が鏡面に加工されたウェーハの該一方の面に、レジスト材料、水溶性の樹脂、又は保護テープを用いて形成される第1保護部材を被覆し、該ウェーハの該他方の面に、レジスト材料、水溶性の樹脂、又は保護テープを用いて形成される第2保護部材を被覆する保護部材被覆工程と、
該第1保護部材及び該第2保護部材を被覆した該ウェーハから複数の小径ウェーハを切り出す切り出し工程と、
該小径ウェーハの外周部を面取りする面取り工程と、
該小径ウェーハから該第1保護部材及び該第2保護部材を除去する保護部材除去工程と、を含むことを特徴とする小径ウェーハの製造方法。 - 前記切り出し工程では、前記ウェーハに対して吸収性を有する波長のレーザビームを該ウェーハに照射することで複数の前記小径ウェーハを切り出すことを特徴とする請求項1に記載の小径ウェーハの製造方法。
- 前記切り出し工程では、前記ウェーハに対して透過性を有する波長のレーザビームの集光点を該ウェーハの内部に位置付けるように該レーザビームを該ウェーハに照射して該ウェーハの内部に改質層を形成することで複数の前記小径ウェーハを切り出すことを特徴とする請求項1に記載の小径ウェーハの製造方法。
- 前記切り出し工程では、前記ウェーハをコアドリルによってくり抜くことで複数の前記小径ウェーハを切り出すことを特徴とする請求項1に記載の小径ウェーハの製造方法。
- 前記切り出し工程では、前記第1保護部材又は前記第2保護部材の前記小径ウェーハの輪郭に相当する部分を除去し、該第1保護部材又は該第2保護部材をマスクとしてプラズマエッチングを行うことで複数の該小径ウェーハを切り出すことを特徴とする請求項1に記載の小径ウェーハの製造方法。
- 前記ウェーハの前記他方の面に前記第2保護部材を被覆する前に、該ウェーハの該他方の面側を研削して該ウェーハを所定の厚みまで薄くする研削工程を更に備えることを特徴とする請求項1から請求項5のいずれかに記載の小径ウェーハの製造方法。
- 前記ウェーハから前記小径ウェーハを切り出す前に、該小径ウェーハの結晶方位を示す目印を該ウェーハの前記一方の面又は前記他方の面に形成する目印形成工程を更に備えることを特徴とする請求項1から請求項6のいずれかに記載の小径ウェーハの製造方法。
- 前記ウェーハから前記小径ウェーハを切り出した後に、該小径ウェーハをピックアップするピックアップ工程を更に備えることを特徴とする請求項1から請求項7のいずれかに記載の小径ウェーハの製造方法。
- 前記小径ウェーハから前記第1保護部材及び前記第2保護部材を除去した後に、該小径ウェーハを洗浄する洗浄工程を更に備えることを特徴とする請求項1から請求項8のいずれかに記載の小径ウェーハの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017218842A JP6987448B2 (ja) | 2017-11-14 | 2017-11-14 | 小径ウェーハの製造方法 |
US16/184,022 US20190148132A1 (en) | 2017-11-14 | 2018-11-08 | Method of manufacturing small-diameter wafer |
CN201811323040.4A CN109786325B (zh) | 2017-11-14 | 2018-11-08 | 小直径晶片的制造方法 |
TW107140166A TWI796383B (zh) | 2017-11-14 | 2018-11-13 | 小徑晶圓的製造方法 |
KR1020180139010A KR102599910B1 (ko) | 2017-11-14 | 2018-11-13 | 소직경 웨이퍼의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017218842A JP6987448B2 (ja) | 2017-11-14 | 2017-11-14 | 小径ウェーハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019091779A JP2019091779A (ja) | 2019-06-13 |
JP6987448B2 true JP6987448B2 (ja) | 2022-01-05 |
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Application Number | Title | Priority Date | Filing Date |
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JP2017218842A Active JP6987448B2 (ja) | 2017-11-14 | 2017-11-14 | 小径ウェーハの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20190148132A1 (ja) |
JP (1) | JP6987448B2 (ja) |
KR (1) | KR102599910B1 (ja) |
CN (1) | CN109786325B (ja) |
TW (1) | TWI796383B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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USD954567S1 (en) * | 2019-06-25 | 2022-06-14 | Ebara Corporation | Measurement jig |
JP7344485B2 (ja) * | 2019-10-01 | 2023-09-14 | 福電資材株式会社 | 半導体ウェーハの製造方法 |
KR20220058042A (ko) * | 2020-10-30 | 2022-05-09 | 삼성전자주식회사 | 반도체 웨이퍼 및 그 제조 방법 |
CN112935731A (zh) * | 2021-03-11 | 2021-06-11 | 贵州航天新力科技有限公司 | 一种"o"型密封环固定片小批量生产的加工方法 |
CN115107179B (zh) * | 2022-08-29 | 2022-12-09 | 江苏京创先进电子科技有限公司 | 晶圆定位缺口切割方法及系统 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58159332A (ja) * | 1982-03-17 | 1983-09-21 | Sumitomo Electric Ind Ltd | 表面保護皮膜を有する半導体ウエハ |
JPS6389305A (ja) * | 1986-10-03 | 1988-04-20 | 株式会社東芝 | ペレツト製造方法 |
JPH10334461A (ja) * | 1997-05-30 | 1998-12-18 | Shin Etsu Chem Co Ltd | 磁気記録媒体基板の製造方法 |
US6718612B2 (en) * | 1999-08-04 | 2004-04-13 | Asahi Glass Company, Ltd. | Method for manufacturing a magnetic disk comprising a glass substrate using a protective layer over a glass workpiece |
JP2001093865A (ja) * | 1999-09-20 | 2001-04-06 | Mitsubishi Materials Silicon Corp | 半導体ウェーハの製造方法 |
EP1467402A4 (en) * | 2002-01-15 | 2009-02-11 | Sekisui Chemical Co Ltd | METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT CHIP |
WO2005028172A1 (ja) * | 2003-09-24 | 2005-03-31 | Mitsuboshi Diamond Industrial Co., Ltd. | 基板分断システム、基板製造装置および基板分断方法 |
JP4666583B2 (ja) * | 2005-01-18 | 2011-04-06 | 株式会社ディスコ | 保護被膜の被覆方法 |
JP2006237055A (ja) * | 2005-02-22 | 2006-09-07 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの製造方法および半導体ウェーハの鏡面面取り方法 |
US20100252959A1 (en) * | 2009-03-27 | 2010-10-07 | Electro Scientific Industries, Inc. | Method for improved brittle materials processing |
JP6048654B2 (ja) * | 2012-12-04 | 2016-12-21 | 不二越機械工業株式会社 | 半導体ウェーハの製造方法 |
JP2015095508A (ja) * | 2013-11-11 | 2015-05-18 | 株式会社ディスコ | ウェーハの加工方法 |
JP6441088B2 (ja) * | 2015-01-13 | 2018-12-19 | 株式会社Sumco | シリコンウェーハの製造方法及び半導体装置の製造方法 |
JP2016207737A (ja) * | 2015-04-17 | 2016-12-08 | 株式会社ディスコ | 分割方法 |
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2017
- 2017-11-14 JP JP2017218842A patent/JP6987448B2/ja active Active
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2018
- 2018-11-08 CN CN201811323040.4A patent/CN109786325B/zh active Active
- 2018-11-08 US US16/184,022 patent/US20190148132A1/en not_active Abandoned
- 2018-11-13 TW TW107140166A patent/TWI796383B/zh active
- 2018-11-13 KR KR1020180139010A patent/KR102599910B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN109786325A (zh) | 2019-05-21 |
US20190148132A1 (en) | 2019-05-16 |
CN109786325B (zh) | 2024-01-02 |
TW201919125A (zh) | 2019-05-16 |
JP2019091779A (ja) | 2019-06-13 |
KR102599910B1 (ko) | 2023-11-07 |
KR20190054983A (ko) | 2019-05-22 |
TWI796383B (zh) | 2023-03-21 |
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