JP6966646B2 - 絶縁ゲートバイポーラトランジスタおよびその製造方法 - Google Patents
絶縁ゲートバイポーラトランジスタおよびその製造方法 Download PDFInfo
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- JP6966646B2 JP6966646B2 JP2020530373A JP2020530373A JP6966646B2 JP 6966646 B2 JP6966646 B2 JP 6966646B2 JP 2020530373 A JP2020530373 A JP 2020530373A JP 2020530373 A JP2020530373 A JP 2020530373A JP 6966646 B2 JP6966646 B2 JP 6966646B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000010410 layer Substances 0.000 claims description 94
- 238000005530 etching Methods 0.000 claims description 53
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 53
- 238000002955 isolation Methods 0.000 claims description 31
- 238000000206 photolithography Methods 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 230000000717 retained effect Effects 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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Description
熱酸化工程を用いてゲート酸化層32を形成することができ、第1のトレンチ21の内面は、シリコン(第1の導電型ベース20)の表面のみにゲート酸化層32が形成され、アイソレーション構造36の表面にはゲート酸化層32が形成されない(図3c参照)。
Claims (15)
- 基板と、
前記基板上に設けられ、下向きに延在する第1のトレンチが表面に設けられた第1の導電型ベースと、
前記第1の導電型ベース上に設けられて、前記第1のトレンチの両側に設けられた第1の導電型バッファ領域と、
第2の導電型を有し、前記第1の導電型バッファ領域上に設けられて、前記第1のトレンチの両側に設けられたコレクタドーピング領域と、
前記基板と前記第1の導電型ベースとの間に設けられ、前記第1のトレンチが下向きに延在する第2の導電型ベースと、
前記第1のトレンチの内面に設けられたゲート酸化層と、
前記ゲート酸化層の内側に位置し、前記第1のトレンチの底部および側壁の一部の領域に充填される多結晶シリコンゲートと、
第1の導電型を有し、前記第2の導電型ベース内で、前記多結晶シリコンゲートの間において第1のトレンチの下部に設けられたエミッタドーピング領域と、
前記第1のトレンチの上方から下向きに延在し、前記エミッタドーピング領域を貫通してから、前記第2の導電型ベースと接触すると共に、前記エミッタドーピング領域と接続する導電プラグと、
前記第1のトレンチ内において、前記導電プラグと多結晶シリコンゲートとの間に充填され、前記多結晶シリコンゲートを覆い、前記多結晶シリコンゲートと前記エミッタドーピング領域とを絶縁分離する絶縁酸化層と、を含み、
前記第1の導電型および第2の導電型は、逆の導電型である、絶縁ゲートバイポーラトランジスタ。 - 前記コレクタドーピング領域と前記第1のトレンチとの間に、さらにアイソレーション構造が設けられていることを特徴とする請求項1に記載の絶縁ゲートバイポーラトランジスタ。
- 前記アイソレーション構造は、シャロートレンチアイソレーション構造であることを特徴とする請求項2に記載の絶縁ゲートバイポーラトランジスタ。
- 前記アイソレーション構造は、シリコンの一部が酸化して形成されたフィールド酸化膜であることを特徴とする請求項2に記載の絶縁ゲートバイポーラトランジスタ。
- 第2のトレンチと、
前記第2のトレンチの底部から上向きに堆積し、前記第2のトレンチから露出するゲート引き出し構造をさらに含むことを特徴とする請求項1に記載の絶縁ゲートバイポーラトランジスタ。 - 前記導電プラグの材質は、金属もしくは合金であり、または、金属と金属窒化物とを含むことを特徴とする請求項1に記載の絶縁ゲートバイポーラトランジスタ。
- 前記第1の導電型バッファ領域は、前記コレクタドーピング領域の下方に位置することを特徴とする請求項1に記載の絶縁ゲートバイポーラトランジスタ。
- 第1の導電型ベースが基板上に形成されたウエハを提供するステップS110と、
下向きに延在する、第1のトレンチを含むトレンチを前記第1の導電型ベースの表面に設けるステップS120と、
前記第1のトレンチの内面にゲート酸化層を形成するステップS130と、
前記第1のトレンチを埋めるように前記第1のトレンチ内に多結晶シリコンを充填するステップS140と、
前記多結晶シリコンを所定の厚さまでエッチングし、前記所定の厚さの多結晶シリコン層を前記第1のトレンチの底部に形成するステップS150と、
前記多結晶シリコン層の表面および前記第1のトレンチの側壁に第1の絶縁酸化層を形成するステップS160と、
前記第1の絶縁酸化層および前記多結晶シリコン層を下向きにエッチングし、前記第1のトレンチの底部を露出させ、前記第1のトレンチの前記側壁の多結晶シリコン層および第1の絶縁酸化層を保留するステップS170と、
前記第1のトレンチの下方に第2の導電型ベースを形成し、前記第2の導電型ベース内に第1の導電型のエミッタドーピング領域を形成するステップS180と、
前記多結晶シリコン層と前記エミッタドーピング領域とを絶縁分離するように前記第1のトレンチ内に第2の絶縁酸化層を形成するステップS190と、
第1の導電型バッファ領域、コレクタドーピング領域、および導電プラグを形成するステップS210と、を含み、
前記第1の導電型および第2の導電型は、逆の導電型である、絶縁ゲートバイポーラトランジスタの製造方法。 - 前記ステップS110で提供されるウエハには、さらにアイソレーション構造が形成され、
前記ステップS120は、フォトリソグラフィ後に前記アイソレーション構造の一部をエッチングし、前記アイソレーション構造を貫くまでエッチングしたフォトレジストで保護されエッチングされていないアイソレーション構造をハードマスクとし、継続して前記第1の導電型ベースを下向きにエッチングし、前記第1のトレンチを形成することを特徴とする請求項8に記載の製造方法。 - 前記ステップS120は、同時に第2のトレンチを設けることをさらに含み、
前記ステップS130は、同時に前記第2のトレンチの内面にゲート酸化層を形成することをさらに含み、
前記ステップS140は、前記第2のトレンチにも多結晶シリコンを埋めることをさらに含み、
前記ステップS150は、フォトリソグラフィ後にエッチングを行い、フォトリソグラフィで形成されたフォトレジストは、少なくとも一部が前記第2のトレンチ内の多結晶シリコンを遮蔽することにより、エッチング後に前記第2のトレンチが露出したゲート引き出し構造を形成することを特徴とする請求項8に記載の製造方法。 - 前記ステップS210は、具体的には、
前記第1のトレンチが埋められていない状態で、前記第1のトレンチ内に絶縁酸化材料を注入するステップS211と、
1回目のフォトリソグラフィを行い、第1の導電型のイオンを注入して、前記第1のトレンチの両側、前記エミッタドーピング領域の斜め上方に前記第1の導電型バッファ領域を形成するステップS213と、
レジスト除去後に2回目のフォトリソグラフィを行い、第2の導電型のイオンを注入し、前記第1の導電型バッファ領域内にコレクタドーピング領域を形成するステップS214と、
レジスト除去後に3回目のフォトリソグラフィを行い、フォトレジストによって前記導電プラグを形成すべき位置でエッチング窓を露出させるステップS215と、
前記エッチング窓を介して前記導電プラグに必要な深さまで下向きにエッチングするステップS217と、
前記第1のトレンチ内に導電材料を注入し、前記導電プラグを形成するステップS219と、を含むことを特徴とする請求項8に記載の製造方法。 - 前記ステップS215は、レジスト除去後に前記コレクタドーピング領域の表面に第3の絶縁酸化層を形成してから、再度フォトリソグラフィを行うステップであり、
前記エッチング窓を介して前記導電プラグに必要な深さまで下向きにエッチングするステップは、第1のエッチング液を採用して、前記エッチング窓を介して前記第1のトレンチの底部まで下向きにエッチングしてから、レジストを除去し、前記第3の絶縁酸化層をエッチングマスクとし、第2のエッチング液を採用して、継続して前記導電プラグに必要な深さまでエッチングするステップであることを特徴とする請求項11に記載の製造方法。 - 前記ステップS170は、
前記第1の絶縁酸化層のエッチバックを行うことであって、第1のトレンチの側壁に位置する第1の絶縁酸化層はエッチバック後にも保留され、第1のトレンチ中央に位置する第1の絶縁酸化層はエッチングされ、前記多結晶シリコン層が露出し、エッチバックには酸化ケイ素のエッチングに適したエッチング液が採用され、フォトレジストが用いられていない、前記第1の絶縁酸化層のエッチバックを行うことと、
保留された第1の絶縁酸化層をマスクとして前記多結晶シリコン層をエッチングし、前記第1のトレンチの底部を露出させることと、を含むことを特徴とする請求項8に記載の製造方法。 - 前記ステップS180は、
保留された第1の絶縁酸化層をバリア層とし、前記第1のトレンチ内に第2の導電型のイオンを注入し、前記第1のトレンチの下方にドライブインして前記第2の導電型ベースを形成することと、
ドライブイン後に、保留された第1の絶縁酸化層をバリア層とし、第1の導電型のイオンを注入し、前記第2の導電型ベース内に前記エミッタドーピング領域を形成することと、を含むことを特徴とする請求項8に記載の製造方法。 - 前記ステップS210で導電プラグを形成した後に、
層間誘電体層を形成することと、
フォトリソグラフィを行い、前記層間誘電体層をエッチングしてコンタクトホールを形成することと、
前記コンタクトホール内に金属タングステンを充填してタングステンプラグを形成し、前記導電プラグおよびコレクタドーピング領域を引き出すことと、をさらに含むことを特徴とする請求項8に記載の製造方法。
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