JP6951714B2 - p型酸化物半導体及びその製造方法 - Google Patents
p型酸化物半導体及びその製造方法 Download PDFInfo
- Publication number
- JP6951714B2 JP6951714B2 JP2018537303A JP2018537303A JP6951714B2 JP 6951714 B2 JP6951714 B2 JP 6951714B2 JP 2018537303 A JP2018537303 A JP 2018537303A JP 2018537303 A JP2018537303 A JP 2018537303A JP 6951714 B2 JP6951714 B2 JP 6951714B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- oxide semiconductor
- semiconductor
- metal
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 298
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims description 72
- 229910052751 metal Inorganic materials 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 70
- 239000013078 crystal Substances 0.000 claims description 53
- 229910052741 iridium Inorganic materials 0.000 claims description 51
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 45
- 239000012159 carrier gas Substances 0.000 claims description 36
- 239000003595 mist Substances 0.000 claims description 33
- 239000002994 raw material Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 27
- 229910044991 metal oxide Inorganic materials 0.000 claims description 25
- 150000004706 metal oxides Chemical class 0.000 claims description 25
- 229910052593 corundum Inorganic materials 0.000 claims description 22
- 239000010431 corundum Substances 0.000 claims description 22
- 230000000737 periodic effect Effects 0.000 claims description 17
- 229910021482 group 13 metal Inorganic materials 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 238000010030 laminating Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 168
- 239000010408 film Substances 0.000 description 49
- 239000000243 solution Substances 0.000 description 25
- 150000002739 metals Chemical class 0.000 description 22
- 229910052782 aluminium Inorganic materials 0.000 description 14
- 229910052738 indium Inorganic materials 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 12
- 229910052733 gallium Inorganic materials 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 239000012212 insulator Substances 0.000 description 11
- 239000012528 membrane Substances 0.000 description 11
- 239000010948 rhodium Substances 0.000 description 11
- 229910001195 gallium oxide Inorganic materials 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 238000000889 atomisation Methods 0.000 description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000005669 field effect Effects 0.000 description 7
- 230000001771 impaired effect Effects 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011575 calcium Substances 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052790 beryllium Inorganic materials 0.000 description 5
- 229910052791 calcium Inorganic materials 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 229910052703 rhodium Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052712 strontium Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 230000005355 Hall effect Effects 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 4
- -1 iridium halide Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229910052716 thallium Inorganic materials 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002003 electron diffraction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 2
- KZMGYPLQYOPHEL-UHFFFAOYSA-N Boron trifluoride etherate Chemical compound FB(F)F.CCOCC KZMGYPLQYOPHEL-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910021638 Iridium(III) chloride Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910019603 Rh2O3 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 229910001867 inorganic solvent Inorganic materials 0.000 description 2
- 239000003049 inorganic solvent Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- DANYXEHCMQHDNX-UHFFFAOYSA-K trichloroiridium Chemical compound Cl[Ir](Cl)Cl DANYXEHCMQHDNX-UHFFFAOYSA-K 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910020203 CeO Inorganic materials 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 150000003842 bromide salts Chemical class 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000013505 freshwater Substances 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- HLYTZTFNIRBLNA-LNTINUHCSA-K iridium(3+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ir+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O HLYTZTFNIRBLNA-LNTINUHCSA-K 0.000 description 1
- 229910001509 metal bromide Inorganic materials 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910001511 metal iodide Inorganic materials 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical compound [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000013535 sea water Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000002349 well water Substances 0.000 description 1
- 235000020681 well water Nutrition 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Description
[2] 前記原料溶液がイリジウム及び他の金属を含み、該他の金属が、周期律表の第2族金属、イリジウム以外の第9族金属又は第13族金属である前記[1]記載の製造方法。
[3] 前記の熱反応を、大気圧下で行う前記[1]又は[2]に記載の製造方法。
[4] 前記基体がコランダム構造を有する基板である前記[1]〜[3]のいずれかに記載の製造方法。
[5] 結晶性酸化物半導体を主成分とするp型酸化物半導体であって、前記結晶性酸化物半導体が、イリジウムを含有する金属酸化物の結晶又は混晶を含むことを特徴とするp型酸化物半導体。
[6] 前記金属酸化物がIr2O3である前記[5]記載のp型酸化物半導体。
[7] 前記結晶性酸化物半導体が、イリジウムと、周期律表の第2族金属、イリジウム以外の第9族金属又は第13族金属とを含有する混晶である前記[5]又は[6]に記載のp型酸化物半導体。
[8] 前記結晶性酸化物半導体が、コランダム構造又はβガリア構造を有する前記[5]〜[7]のいずれかに記載のp型酸化物半導体。
[9] 結晶性酸化物半導体を主成分とするp型酸化物半導体であって、バンドギャップが2.4eV以上であることを特徴とするp型酸化物半導体。
[10] 半導体層及び電極を少なくとも備える半導体装置であって、前記半導体層が、前記[5]〜[9]のいずれかに記載のp型酸化物半導体を含むことを特徴とする半導体装置。
[11] さらに、n型半導体層を備えており、該n型半導体層は酸化物半導体を主成分とする前記[10]記載の半導体装置。
[12] 前記n型半導体層が、周期律表の第2族金属、第9族金属又は第13族金属を含む酸化物半導体を主成分とする前記[11]記載の半導体装置。
[13] 前記n型半導体層の主成分である酸化物半導体と、前記p型酸化物半導体との格子定数差が1.0%以下である前記[11]又は[12]に記載の半導体装置。
[14] 前記n型半導体層が、Gaを含む結晶性酸化物半導体を主成分とする前記[11]〜[13]のいずれかに記載の半導体装置。
[15] ヘテロ接合型バイポーラトランジスタ(HBT)である前記[10]〜[14]のいずれかに記載の半導体装置。
[16] 少なくともp型半導体層とn型半導体層とを積層する工程を含む前記[11]〜[15]のいずれかに記載の半導体装置の製造方法であって、前記p型半導体層が、前記[5]〜[9]のいずれかに記載のp型酸化物半導体を主成分として含むことを特徴とする、半導体装置の製造方法。
[17] 前記n型半導体層が、前記p型酸化物半導体との格子定数差が1.0%以内である酸化物半導体を主成分として含む前記[16]記載の製造方法。
[18] 前記n型半導体層が、Gaを含む結晶性酸化物半導体を主成分とする前記[16]又は[17]に記載の製造方法。
[19] 半導体装置を備える半導体システムであって、前記半導体装置が前記[10]〜[15]のいずれかに記載の半導体装置である半導体システム。
[20] 金属酸化物の結晶又は混晶を形成することにより酸化物半導体を製造する方法であって、前記の金属酸化物の結晶又は混晶の形成を、イリジウム及び所望により他の金属を含む原料を用いて、コランダム構造を有する基体上に、直接または他の層を介して、イリジウムを含有する金属酸化物の結晶又は混晶を結晶成長させることにより行うことを特徴とする酸化物半導体の製造方法。
[21]
前記原料が、ハロゲン化イリジウムを含む前記[20]記載の製造方法。
霧化工程は、イリジウム及び所望により他の金属を含む原料溶液を霧化する。霧化手段は、前記原料溶液を霧化できさえすれば特に限定されず、公知の手段であってよいが、本発明においては、超音波を用いる霧化手段が好ましい。超音波を用いて得られたミストは、初速度がゼロであり、空中に浮遊するので好ましく、例えば、スプレーのように吹き付けるのではなく、空間に浮遊してガスとして搬送することが可能なミストであるので衝突エネルギーによる損傷がないため、非常に好適である。ミストの液滴のサイズは、特に限定されず、数mm程度であってもよいが、好ましくは50μm以下であり、より好ましくは100nm〜10μmである。
前記原料溶液は、イリジウム及び所望により他の金属を含んでいれば特に限定されず、無機材料が含まれていても、有機材料が含まれていてもよい。前記原料溶液がイリジウム及び他の金属を含む場合には、該他の金属が、周期律表の第2族金属、イリジウム以外の第9族金属又は第13族金属であるのが好ましい。また、前記原料溶液がイリジウム及び他の金属を含む場合には、イリジウムを含む原料溶液と、他の金属を含む原料溶液とに分けてそれぞれ霧化工程に付し、搬送工程又は製膜工程にてそれぞれの原料溶液から得られたミストを合流させてもよい。本発明においては、イリジウム及び所望により他の金属を錯体又は塩の形態で有機溶媒または水に溶解又は分散させたものを前記原料溶液として好適に用いることができる。錯体の形態としては、例えば、アセチルアセトナート錯体、カルボニル錯体、アンミン錯体、ヒドリド錯体などが挙げられる。塩の形態としては、例えば、有機金属塩(例えば金属酢酸塩、金属シュウ酸塩、金属クエン酸塩等)、硫化金属塩、硝化金属塩、リン酸化金属塩、ハロゲン化金属塩(例えば塩化金属塩、臭化金属塩、ヨウ化金属塩等)などが挙げられる。なお、本発明のミストCVD法によれば、原料濃度が低くても、好適に製膜することができる。
前記基体は、前記p型酸化物半導体を支持できるものであれば特に限定されない。前記基体の材料も、本発明の目的を阻害しない限り特に限定されず、公知の基体であってよく、有機化合物であってもよいし、無機化合物であってもよい。前記基体の形状としては、どのような形状のものであってもよく、あらゆる形状に対して有効であり、例えば、平板や円板等の板状、繊維状、棒状、円柱状、角柱状、筒状、螺旋状、球状、リング状などが挙げられるが、本発明においては、基板が好ましい。基板の厚さは、本発明においては特に限定されない。
搬送工程では、前記キャリアガスによって前記ミストを基体へ搬送する。キャリアガスの種類としては、本発明の目的を阻害しない限り特に限定されず、例えば、酸素、オゾン、窒素やアルゴン等の不活性ガス、または水素ガスやフォーミングガス等の還元ガスなどが挙げられるが、本発明においては、キャリアガスとして酸素を用いるのが好ましい。酸素が用いられているキャリアガスとしては、例えば空気、酸素ガス、オゾンガス等が挙げられるが、とりわけ酸素ガス及び/又はオゾンガスが好ましい。また、キャリアガスの種類は1種類であってよいが、2種類以上であってもよく、キャリアガス濃度を変化させた希釈ガス(例えば10倍希釈ガス等)などを、第2のキャリアガスとしてさらに用いてもよい。また、キャリアガスの供給箇所も1箇所だけでなく、2箇所以上あってもよい。本発明においては、霧化室、供給管及び製膜室を用いる場合には、前記霧化室及び前記供給管にそれぞれキャリアガスの供給箇所を設けるのが好ましく、前記霧化室にはキャリアガスの供給箇所を設け、前記供給管には希釈ガスの供給箇所を設けるのがより好ましい。また、キャリアガスの流量は、特に限定されないが、0.01〜20L/分であるのが好ましく、1〜10L/分であるのがより好ましい。希釈ガスの場合には、希釈ガスの流量が、0.001〜2L/分であるのが好ましく、0.1〜1L/分であるのがより好ましい。
製膜工程では、前記ミストを前記基体表面近傍で反応させて、前記基体表面の一部または全部に製膜する。前記熱反応は、前記ミストから膜が形成される熱反応であれば特に限定されず、熱でもって前記ミストが反応すればそれでよく、反応条件等も本発明の目的を阻害しない限り特に限定されない。本工程においては、前記熱反応を、通常、溶媒の蒸発温度以上の温度で行うが、あまり高すぎない温度以下が好ましい。本発明においては、前記熱反応を、1200℃以下で行うのが好ましく、300℃〜700℃または750℃〜1200℃の温度で行うのがより好ましく、350℃〜600℃または750℃〜1100℃で行うのが最も好ましい。また、熱反応は、本発明の目的を阻害しない限り、真空下、非酸素雰囲気下、還元ガス雰囲気下および酸化雰囲気下のいずれの雰囲気下で行われてもよく、また、大気圧下、加圧下および減圧下のいずれの条件下で行われてもよいが、本発明においては、酸化雰囲気下で行われるのが好ましく、大気圧下で行われるのも好ましく、酸化雰囲気下でかつ大気圧下で行われるのがより好ましい。なお、「酸化雰囲気」は、イリジウムを含有する金属酸化物の結晶又は混晶が前記熱反応により形成できる雰囲気であれば特に限定されない。例えば、酸素を含むキャリアガスを用いたり、酸化剤を含む原料溶液からなるミストを用いたりして酸化雰囲気とすること等が挙げられる。また、膜厚は、製膜時間を調整することにより、設定することができ、本発明においては、膜厚が1nm〜1mmであるのが好ましく、1nm〜100μmであるのが、半導体特性がより向上するのでより好ましく、1nm〜10μmであるのが最も好ましい。
なお、本発明においては、前記p型半導体層の製膜前又は製膜後に、n型半導体層を形成するのが好ましい。より具体的には、前記半導体装置の製造方法において、少なくともp型半導体層とn型半導体層とを積層する工程を含むのが好ましい。n型半導体層の形成手段は特に限定されず、公知の手段であってよいが、本発明においては、ミストCVD法が好ましい。前記n型半導体層は、酸化物半導体を主成分とするのが好ましく、周期律表の第2族金属(例えばBe、Mg、Ca、Sr、Ba等)、第9族金属(例えばCo、Rh、Ir等)又は第13族金属(例えばAl、Ga、In、Tl等)を含む酸化物半導体を主成分とするのがより好ましい。また、前記n型半導体層は、結晶性酸化物半導体を主成分とするのも好ましく、Gaを含む結晶性酸化物半導体を主成分とするのがより好ましく、コランダム構造を有し且つGaを含む結晶性酸化物半導体を主成分とするのが最も好ましい。また、本発明においては、前記n型半導体の主成分である酸化物半導体と、前記p型酸化物半導体との格子定数差が、1.0%以下であるのも、良好なpn接合を形成することができるため、好ましく、0.3%以下であるのがより好ましい。ここで、「格子定数差」とは、前記n型半導体の主成分である酸化物半導体の格子定数から、前記p型酸化物半導体の格子定数を差し引いた値を、前記p型酸化物半導体の格子定数で除した数値の絶対値を100倍した数値(%)と定義される。前記格子定数差が1.0%以下である場合の例としては、p型酸化物半導体がコランダム構造を有する場合であって、n型半導体の主成分である酸化物半導体もコランダム構造を有する場合等が挙げられ、より好適には、p型酸化物半導体が、Ir2O3の単結晶又は混晶であって、n型半導体の主成分である酸化物半導体が、Ga2O3の単結晶又は混晶である場合等が挙げられる。
本発明の半導体装置が発光ダイオード(LED)である場合の一例を図8に示す。図8の半導体発光素子は、第2の電極165b上にn型半導体層161を備えており、n型半導体層161上には、発光層163が積層されている。そして、発光層163上には、p型半導体層162が積層されている。p型半導体層162上には、発光層163にて発生する光を透過する透光性電極167を備えており、透光性電極167上には、第1の電極165aが積層されている。発光層に用いられる発光体は公知のものであってもよい。なお、図8の半導体発光素子は、電極部分を除いて保護層で覆われていてもよい。
本発明の半導体装置がヘテロ接合型バイポーラトランジスタ(HBT)である場合の一例を図13に示す。図13のHBTは、npn構造及びpnp構造のいずれの構造をとることもできる。以下、npn構造について詳しく説明するが、pnp構造の場合も同様であって、npn構造のp型層をpnp構造のn型層で置換することができ、その逆も行うことができる。基板60は、半絶縁性の基体でよく、高い抵抗率(例えば105Ωcmを超える抵抗率等)を有し得る。なお、基板60はn型であってもよい。
なお、pnp HBTは、pnp HBTのp型層をnpn HBTのn型層で置換すると共に、その逆も行うことで形成できる。
1.製膜装置
図1を用いて、本実施例で用いたミストCVD装置を説明する。ミストCVD装置19は、基板20を載置するサセプタ21と、キャリアガスを供給するキャリアガス供給手段22aと、キャリアガス供給手段22aから送り出されるキャリアガスの流量を調節するための流量調節弁23aと、キャリアガス(希釈)を供給するキャリアガス(希釈)供給手段22bと、キャリアガス(希釈)供給手段22bから送り出されるキャリアガスの流量を調節するための流量調節弁23bと、原料溶液24aが収容されるミスト発生源24と、水25aが入れられる容器25と、容器25の底面に取り付けられた超音波振動子26と、内径40mmの石英管からなる供給管27と、供給管27の周辺部に設置されたヒーター28とを備えている。サセプタ21は、石英からなり、基板20を載置する面が水平面から傾斜している。成膜室となる供給管27とサセプタ21をどちらも石英で作製することにより、基板20上に形成される膜内に装置由来の不純物が混入することを抑制している。
イリジウムアセチルアセトナート(イリジウム濃度0.005mol/L)に、マグネシウムアセチルアセトナードをモル比で1%、塩酸を同じモル数となるように加えて水溶液を調整し、これを原料溶液とした。
上記2.で得られた原料溶液24aミスト発生源24内に収容した。次に、基板20として、c面サファイア基板をサセプタ21上に設置し、ヒーター28の温度を500℃にまで昇温させた。次に、流量調節弁23a、23bを開いて、キャリアガス源であるキャリアガス供給手段22a、22bからキャリアガスを供給管27内に供給し、供給管27内の雰囲気をキャリアガスで十分に置換した後、キャリアガスの流量を5.0L/分に、キャリアガス(希釈)の流量を0.5L/分にそれぞれ調節した。なお、キャリアガスとして酸素を用いた。
次に、超音波振動子を振動させ、その振動を、水25を通じて原料溶液24aに伝播させることによって、原料溶液24aを霧化させてミストを生成させた。このミストが、キャリアガスによって、供給管27に搬送され、大気圧下、500℃にて、ミストが熱反応して基板20上に膜が形成された。なお、製膜時間は1時間であり、膜厚は20nmであった。
また、上記4.にて得られた膜について、TEMを用いて、図14のとおり、電子線回折像を得た。図14の電子線回折像からも、上記4.で得られた膜が、基板で用いたサファイアのコランダム構造と同じ構造を有することがわかる。
実施例1の実験値を用いて、α―Ir2O3の格子定数を算出したところ、α―Ga2O3との格子定数差が0.3%であることがわかった。そのため、n型半導体の主成分である酸化物半導体として、α―Ga2O3の結晶を用いることが有用であることがわかる。
原料溶液として、塩化イリジウム(III)(イリジウム濃度0.05mol/L)に塩酸を体積比で20%となるように加えて調整した水溶液を用いたこと、キャリアガスの流量を1.0L/minとしたこと、製膜温度を1000℃としたこと、および製膜時間を20分としたこと以外は、実施例1と同様にして、製膜を行った。得られた膜につき、実施例1と同様にして膜の同定を行ったところ、得られた膜はα−Ir2O3膜であった。なお、XRDの結果を図15に示す。また、得られたα−Ir2O3膜の膜厚は2μmであった。
原料溶液として、塩化イリジウム(III)(イリジウム濃度0.02mol/L)および塩化ガリウム(III)(ガリウム濃度0.02mol/L)を混合し、さらに塩酸を体積比で20%となるように加えて調整した水溶液を用いたこと、キャリアガスの流量を1.5L/minとしたこと、製膜温度を750℃としたこと、製膜時間を20分としたこと以外は、実施例1と同様にして、製膜を行った。得られた膜につき、実施例1と同様にして膜の同定を行ったところ、得られた膜はα―(Ir0.95,Ga0.05)2O3であった。なお、膜厚は2μmであった。また、得られたα―(Ir0.95,Ga0.05)2O3につき、実施例1と同様にしてホール効果測定を実施して、p型半導体であることを確認した。なお、F値は0.905であった。また、キャリア濃度は3.7×1020(/cm3)であり、移動度は2.9(cm2/V・s)であった。
再現性を確認するために、実施例3と同様にして、製膜を行った。得られた膜につき、実施例1と同様にして膜の同定を行ったところ、得られた膜はα―(Ir0.95,Ga0.05)2O3であった。なお、膜厚は2μmであった。また、得られたα―(Ir0.95,Ga0.05)2O3につき、実施例1と同様にしてホール効果測定を実施して、p型半導体であることを確認した。なお、F値は0.927であった。また、キャリア濃度は2.0×1020(/cm3)であり、移動度は5.8(cm2/V・s)であった。
20 基板
21 サセプタ
22a キャリアガス供給手段
22b キャリアガス(希釈)供給手段
23a 流量調節弁
23b 流量調節弁
24 ミスト発生源
24a 原料溶液
25 容器
25a 水
26 超音波振動子
27 供給管
28 ヒーター
29 排気口
40 サブコレクタ層
42 コレクタ層
44 ベース層
46 エミッタ層
48 キャップ層
52 コレクタ電極
54 ベース電極
56 エミッタ電極
60 基板
101a n−型半導体層
101b n+型半導体層
102 p型半導体層
103 金属層
104 絶縁体層
105a ショットキー電極
105b オーミック電極
121a バンドギャップの広いn型半導体層
121b バンドギャップの狭いn型半導体層
121c n+型半導体層
123 p型半導体層
125a ゲート電極
125b ソース電極
125c ドレイン電極
128 緩衝層
129 基板
131a n−型半導体層
131b 第1のn+型半導体層
131c 第2のn+型半導体層
132 p型半導体層
134 ゲート絶縁膜
135a ゲート電極
135b ソース電極
135c ドレイン電極
138 緩衝層
139 半絶縁体層
141a n−型半導体層
141b 第1のn+型半導体層
141c 第2のn+型半導体層
142 p型半導体層
145a ゲート電極
145b ソース電極
145c ドレイン電極
151 n型半導体層
151a n−型半導体層
151b n+型半導体層
152 p型半導体層
154 ゲート絶縁膜
155a ゲート電極
155b エミッタ電極
155c コレクタ電極
161 n型半導体層
162 p型半導体層
163 発光層
165a 第1の電極
165b 第2の電極
167 透光性電極
169 基板
Claims (18)
- 金属酸化物の結晶又は混晶を形成して結晶性酸化物半導体を主成分とするp型酸化物半導体を製造する方法であって、イリジウム及び所望により他の金属を含む原料溶液を霧化してミストを生成し、キャリアガスを用いて、基体の表面近傍まで前記ミストを搬送した後、前記ミストを前記基体表面近傍にて熱反応させることにより、前記基体上にイリジウムを含有する金属酸化物の結晶又は混晶を形成することを特徴とするp型酸化物半導体の製造方法。
- 前記原料溶液がイリジウム及び他の金属を含み、該他の金属が、周期律表の第2族金属、イリジウム以外の第9族金属又は第13族金属である請求項1記載の製造方法。
- 前記の熱反応を、大気圧下で行う請求項1又は2に記載の製造方法。
- 前記基体がコランダム構造を有する基板である請求項1〜3のいずれかに記載の製造方法。
- 結晶性酸化物半導体を主成分とするp型酸化物半導体であって、前記結晶性酸化物半導体が、イリジウムを含有する金属酸化物の結晶又は混晶を含むことを特徴とするp型酸化物半導体。
- 前記金属酸化物がIr2O3である請求項5記載のp型酸化物半導体。
- 前記結晶性酸化物半導体が、イリジウムと、周期律表の第2族金属、イリジウム以外の第9族金属又は第13族金属とを含有する混晶である請求項5又は6に記載のp型酸化物半導体。
- 前記結晶性酸化物半導体が、コランダム構造又はβガリア構造を有する請求項5〜7のいずれかに記載のp型酸化物半導体。
- 半導体層及び電極を少なくとも備える半導体装置であって、前記半導体層が、請求項5〜8のいずれかに記載のp型酸化物半導体を含むことを特徴とする半導体装置。
- さらに、n型半導体層を備えており、該n型半導体層は酸化物半導体を主成分とする請求項9記載の半導体装置。
- 前記n型半導体層が、周期律表の第2族金属、第9族金属又は第13族金属を含む酸化物半導体を主成分とする請求項10記載の半導体装置。
- 前記n型半導体層の主成分である酸化物半導体と、前記p型酸化物半導体との格子定数差が1.0%以下である請求項10又は11に記載の半導体装置。
- 前記n型半導体層が、Gaを含む結晶性酸化物半導体を主成分とする請求項10〜12のいずれかに記載の半導体装置。
- ヘテロ接合型バイポーラトランジスタ(HBT)である請求項9〜13のいずれかに記載の半導体装置。
- 少なくともp型半導体層とn型半導体層とを積層する工程を含む請求項10〜14のいずれかに記載の半導体装置の製造方法であって、前記p型半導体層が、請求項5〜8のいずれかに記載のp型酸化物半導体を主成分として含むことを特徴とする、半導体装置の製造方法。
- 前記n型半導体層が、前記p型酸化物半導体との格子定数差が1.0%以内である酸化物半導体を主成分として含む請求項15記載の製造方法。
- 前記n型半導体層が、Gaを含む結晶性酸化物半導体を主成分とする請求項15又は16に記載の製造方法。
- 半導体装置を備える半導体システムであって、前記半導体装置が請求項9〜14のいずれかに記載の半導体装置である半導体システム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016170330 | 2016-08-31 | ||
JP2016170330 | 2016-08-31 | ||
JP2016186343 | 2016-09-24 | ||
JP2016186343 | 2016-09-24 | ||
PCT/JP2017/031007 WO2018043503A1 (ja) | 2016-08-31 | 2017-08-29 | p型酸化物半導体及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018043503A1 JPWO2018043503A1 (ja) | 2019-07-04 |
JP6951714B2 true JP6951714B2 (ja) | 2021-10-20 |
Family
ID=61300723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018537303A Active JP6951714B2 (ja) | 2016-08-31 | 2017-08-29 | p型酸化物半導体及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11087977B2 (ja) |
EP (1) | EP3509090A4 (ja) |
JP (1) | JP6951714B2 (ja) |
KR (1) | KR102329576B1 (ja) |
CN (1) | CN109643660B (ja) |
WO (1) | WO2018043503A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11545586B2 (en) | 2017-09-29 | 2023-01-03 | Intel Corporation | Group III-nitride Schottky diode |
DE112017007912T5 (de) * | 2017-09-29 | 2020-07-02 | Intel Corporation | Gruppe-iii-nitrid-antennendiode |
WO2019098297A1 (ja) * | 2017-11-15 | 2019-05-23 | 株式会社Flosfia | 半導体装置 |
JP7453612B2 (ja) | 2017-11-15 | 2024-03-21 | 株式会社Flosfia | 半導体装置 |
WO2020013242A1 (ja) * | 2018-07-12 | 2020-01-16 | 株式会社Flosfia | 半導体装置 |
TW202018819A (zh) * | 2018-07-12 | 2020-05-16 | 日商Flosfia股份有限公司 | 半導體裝置和半導體系統 |
TW202013716A (zh) | 2018-07-12 | 2020-04-01 | 日商Flosfia股份有限公司 | 半導體裝置和半導體系統 |
JP7404594B2 (ja) * | 2018-07-12 | 2023-12-26 | 株式会社Flosfia | 半導体装置および半導体装置を含む半導体システム |
US20210320176A1 (en) * | 2018-07-12 | 2021-10-14 | Flosfia Inc. | Semiconductor device |
TW202006945A (zh) * | 2018-07-12 | 2020-02-01 | 日商Flosfia股份有限公司 | 半導體裝置和半導體系統 |
JP7315137B2 (ja) * | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物膜 |
JP7315136B2 (ja) * | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物半導体 |
JP7247945B2 (ja) * | 2020-04-24 | 2023-03-29 | トヨタ自動車株式会社 | 酸化ガリウム系半導体及びその製造方法 |
KR20210153244A (ko) | 2020-06-10 | 2021-12-17 | 박문석 | P,n 반도체 방식 압전소자의 p형 반도체 제조를 위한 혼합조성물 |
CN114361253A (zh) * | 2021-12-29 | 2022-04-15 | 东南大学 | 一种氧化物半导体双极型晶体管及其制备方法 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4103415A (en) * | 1976-12-09 | 1978-08-01 | Fairchild Camera And Instrument Corporation | Insulated-gate field-effect transistor with self-aligned contact hole to source or drain |
JPS61139074A (ja) * | 1984-12-10 | 1986-06-26 | Sanyo Electric Co Ltd | 光起電力素子 |
JP3586939B2 (ja) | 1994-12-22 | 2004-11-10 | 株式会社デンソー | El素子およびその製造方法 |
FR2733228B1 (fr) | 1995-04-20 | 1997-05-23 | Rhone Poulenc Chimie | Procede d'hydroxycarbonylation du butadiene |
JP3912557B2 (ja) | 1997-07-07 | 2007-05-09 | 株式会社ジーエス・ユアサコーポレーション | 固体高分子型水電解セル |
KR100269309B1 (ko) * | 1997-09-29 | 2000-10-16 | 윤종용 | 고집적강유전체메모리장치및그제조방법 |
US6362034B1 (en) * | 1999-12-20 | 2002-03-26 | Intel Corporation | Method of forming MOSFET gate electrodes having reduced depletion region growth sensitivity to applied electric field |
JP4262433B2 (ja) * | 2002-02-20 | 2009-05-13 | 株式会社日立製作所 | 半導体装置の製造方法 |
TWI243496B (en) * | 2003-12-15 | 2005-11-11 | Canon Kk | Piezoelectric film element, method of manufacturing the same, and liquid discharge head |
JP4831940B2 (ja) | 2004-05-24 | 2011-12-07 | 株式会社光波 | 半導体素子の製造方法 |
JP4576201B2 (ja) * | 2004-10-26 | 2010-11-04 | 創世理工株式会社 | 三酸化モリブデン層の作製方法 |
KR20070116080A (ko) * | 2005-03-30 | 2007-12-06 | 목스트로닉스 인코포레이티드 | 금속 옥사이드 반도체 필름, 구조 및 방법 |
JP4568197B2 (ja) * | 2005-09-15 | 2010-10-27 | 三洋電機株式会社 | 酸化物半導体素子 |
US7329915B2 (en) | 2005-11-21 | 2008-02-12 | Hewlett-Packard Development Company, L.P. | Rectifying contact to an n-type oxide material or a substantially insulating oxide material |
TWM296476U (en) * | 2005-12-09 | 2006-08-21 | Formosa Epitaxy Inc | Flip chip LED with high luminous efficiency |
JP2008289967A (ja) * | 2007-05-23 | 2008-12-04 | Samco Inc | 薄膜形成方法及び薄膜形成装置 |
US8252649B2 (en) * | 2008-12-22 | 2012-08-28 | Infineon Technologies Ag | Methods of fabricating semiconductor devices and structures thereof |
JP5487615B2 (ja) * | 2008-12-24 | 2014-05-07 | サンケン電気株式会社 | 電界効果半導体装置及びその製造方法 |
KR101720244B1 (ko) * | 2010-06-01 | 2017-03-27 | 삼성전자주식회사 | 전기 변색 소자 |
JP5648126B2 (ja) * | 2011-06-10 | 2015-01-07 | 株式会社アルバック | 抵抗変化素子及びその製造方法 |
CN102916097B (zh) * | 2011-08-01 | 2017-08-18 | 潘才法 | 一种电致发光器件 |
JP5948581B2 (ja) | 2011-09-08 | 2016-07-06 | 株式会社Flosfia | Ga2O3系半導体素子 |
JP2013102081A (ja) * | 2011-11-09 | 2013-05-23 | Tamura Seisakusho Co Ltd | ショットキーバリアダイオード |
JP2013165189A (ja) * | 2012-02-10 | 2013-08-22 | Univ Of Electro-Communications | NiO系酸化物半導体発光素子および酸化物半導体単結晶層の成長方法 |
JP6108858B2 (ja) | 2012-02-17 | 2017-04-05 | 株式会社半導体エネルギー研究所 | p型半導体材料および半導体装置 |
JP5826094B2 (ja) * | 2012-03-30 | 2015-12-02 | 株式会社半導体エネルギー研究所 | p型半導体材料、および光電変換装置の作製方法 |
JP2013229449A (ja) * | 2012-04-25 | 2013-11-07 | Advanced Power Device Research Association | 窒化物系半導体素子 |
JP6467171B2 (ja) * | 2013-09-17 | 2019-02-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6349592B2 (ja) | 2014-07-22 | 2018-07-04 | 株式会社Flosfia | 半導体装置 |
JP2016081946A (ja) * | 2014-10-09 | 2016-05-16 | 株式会社Flosfia | 半導体構造および半導体装置 |
JP6478103B2 (ja) * | 2015-01-29 | 2019-03-06 | 株式会社Flosfia | 成膜装置および成膜方法 |
WO2018004009A1 (ja) * | 2016-06-30 | 2018-01-04 | 株式会社Flosfia | p型酸化物半導体及びその製造方法 |
-
2017
- 2017-08-29 JP JP2018537303A patent/JP6951714B2/ja active Active
- 2017-08-29 WO PCT/JP2017/031007 patent/WO2018043503A1/ja unknown
- 2017-08-29 US US16/326,569 patent/US11087977B2/en active Active
- 2017-08-29 EP EP17846508.4A patent/EP3509090A4/en active Pending
- 2017-08-29 CN CN201780053309.9A patent/CN109643660B/zh active Active
- 2017-08-29 KR KR1020197002509A patent/KR102329576B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN109643660B (zh) | 2024-03-05 |
EP3509090A1 (en) | 2019-07-10 |
WO2018043503A1 (ja) | 2018-03-08 |
CN109643660A (zh) | 2019-04-16 |
US20190189441A1 (en) | 2019-06-20 |
EP3509090A4 (en) | 2020-04-29 |
JPWO2018043503A1 (ja) | 2019-07-04 |
US11087977B2 (en) | 2021-08-10 |
KR20190042552A (ko) | 2019-04-24 |
KR102329576B1 (ko) | 2021-11-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6951714B2 (ja) | p型酸化物半導体及びその製造方法 | |
JP6994183B2 (ja) | 酸化物半導体膜及びその製造方法 | |
CN107799584B (zh) | 结晶性氧化物半导体膜、半导体装置及半导体系统 | |
JP6994181B2 (ja) | 結晶性酸化物半導体膜および半導体装置 | |
JP7065443B2 (ja) | p型酸化物半導体及びその製造方法 | |
JP6904517B2 (ja) | 結晶性酸化物半導体膜およびその製造方法 | |
JP7391290B2 (ja) | 結晶性酸化物半導体膜および半導体装置 | |
JP7358718B2 (ja) | 結晶性酸化物半導体膜および半導体装置 | |
JP7274701B2 (ja) | p型酸化物半導体膜及びその形成方法 | |
WO2022030647A2 (ja) | 酸化物半導体及び酸化物半導体を含む半導体装置 | |
US20220140083A1 (en) | Oxide semiconductor film and semiconductor device | |
JP2022030646A (ja) | 酸化物半導体及び酸化物半導体を含む半導体装置 | |
JPWO2019098298A1 (ja) | 半導体装置 | |
JPWO2020013260A1 (ja) | 半導体装置および半導体装置を含む半導体システム | |
WO2022030648A2 (ja) | p型酸化物半導体及びp型酸化物半導体を含む半導体装置 | |
WO2021010238A1 (ja) | 酸化物膜及び半導体装置 | |
JP2022030645A (ja) | p型酸化物半導体及びp型酸化物半導体を含む半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20190128 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200826 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20200831 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210525 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210726 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210817 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210915 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6951714 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |