TWM296476U - Flip chip LED with high luminous efficiency - Google Patents

Description

M296476 VIII. New Description: TECHNICAL FIELD OF THE INVENTION The present invention relates to a light-emitting diode, which is particularly related to a flip-chip light-emitting diode structure that provides high luminosity. [Prior Art] According to the development of lighting equipment, due to the high power of traditional lighting equipment, there are many disadvantages of power generation. For this reason, experts, scholars and scholars from various industries, scholars and research institutes have invested in lighting components. Research, light-emitting diode (Light Emitting DiQde; _ is here; should be born. Wide-mouth, please refer to the figure - Figure' is a diagram of the polar body of the gallium nitride series grown by the known sapphire substrate, as shown As shown, the gallium buffer layer 2, the n-type nitriding mirror two-contact layer 3', the indium nitride gallium light-emitting layer 4', the p-type nitride brittle coating layer 5, —= gallium, m contact layer 6' and -P type light-transmissive metal conductive layer 7, the crystal growth on the sapphire substrate / upper 'last' setting - anode electrode 8' on the p-type transparent metal conductive layer 7, Above and = set: electrode 9' in the N-type gallium nitride ohmic contact layer 3, and respectively connected to the anode 2, 'cathode electrode 9' wire 1 () ', 1 Γ to conduct - conductive bracket, Two electrodes.... In the above-mentioned conventional light-emitting diode structure, when the indium nitride gallium light-emitting layer 4 emits light The anode electrode 8' is a schematic diagram that shields the light emitted from the light-emitting layer 4, so that the light emission = ^ is a self-known flip-chip light-emitting diode, such as riding, this surname 15 > ^ ^ Η = fine attached When the light emitted by the light-emitting layer 4 is in the -first conductive region 13' and the -second conductive region of the pedestal 15', the anode plate 8 is not passed through, and the penetrating plate 1 (such as sapphire) is directly guided. To the outside world, thereby increasing the light-emitting area. ~ Although the flip-chip light-emitting diode shown in the second figure above can solve the problem of the light emitted by the anode light layer 4, of course, due to the flip-chip light-emitting Part of the light of the polar body M296476, the first conductive region 13, the second conductive region 14, and the pedestal i5, the flip-chip light-emitting diode structure can not effectively exhibit the luminous effect. ..., the outside world, therefore, in view of this Therefore, how to propose a high luminosity coverage. ^, has long been the user's eager hope and the creator of the winter syllabus =, and the solution of the people's many years of professional knowledge, and finally researched a book ancient A, this Enthusiasm, the theme of the people. π 5+ rate 彳 式 发光 发光 发光 H H H H H H H H H H H H H H H H H H H H H H H H [New content] Luminous 3 = The main purpose - the white enamel is to provide a kind of illuminating diode, which provides a high illuminance flip chip x = f to emit light from the illuminating layer to avoid the situation where the light is blocked. The pole 4 is fine (four) will emit two _can ± ± ν", on the substrate, worse, to shorten the thermal distance of the light-emitting diode, increase the use of the scorpion, and further reduce the package volume. OBJECT AND ADVANTAGES OF THE INVENTION A high-luminosity flip-chip light-emitting diode of the present invention is formed by a vapor-permeable layer, a metal reflective layer, a conductive layer, and a diffusion-protected semiconductor layer. In order to reflect the light-emitting efficiency of the flip-chip light-emitting body by reflecting the light emitted by the light-emitting layer, the creation of the light-emitting diode chip can be reversed on the high-heat-conducting substrate by using the flip chip technology. The heat dissipation capability of the light-emitting diode is improved, and the use period of the light-emitting diode is further extended. [Embodiment] In order to enable the reviewing committee to have a better understanding and understanding of the structural features and the effects achieved by the reviewing committee, it is necessary to carry out the implementation and the detailed outline of the present invention, as follows: Based on the conventional flip-chip illuminating The luminous efficiency of the diode is not lost. Therefore, this creation provides a flip-chip light-emitting diode with a high luminous rate to solve the above problems. The second figure is a schematic diagram of the high-luminance flip-chip light-emitting diode chip of the present invention. As shown in the figure, the light-emitting diode structure of the present invention comprises a transparent substrate 10 and a Semiconductor M296476 厗 导电 conductive layer 18, oxidized layer 20, metal reflective layer 22, conductive layer 24, - (SaP^: ), SiC) ^ ^t#(Zn〇) ^ ^^(Gap) ^ ^^(Ga:- the person' or the substrate material having the south light transmitting property. The body layer is disposed above the substrate 1 , and the semiconductor layer includes an N-type semi-conductive light layer 14 and a conductive layer The exhibition is only for the cb ^^ type semiconductor layer 12 and the p_# 1^ its towel, and the 14 layer is between the dust layer 16, and the n-type semiconductor layer is the Sun M layer. The P-type semiconductor layer 16 is a _p_GaN layer. The carrier layer 12 is a 嶋- ί ί Γ峨 layer 14 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ (QUantum wel1) structure of the towel - and the conductor of the conductor structure contains AlaInbGai』/AU Ga ^ "...里〇^y<l;x>c>a〇-中 a,b』,ba +b<1;x,sword; 6 Nimm contact to reduce contact resistance', wherein the transparent conductive layer Μ material can be selected from the group consisting of oxidation name, emulsified tin, German surface, oxidation _, zinc oxide, indium zinc oxide, magnesium zinc oxide, tin oxide, llTmnT^' "(Pt)'Nl/AU' ΉΝ'Μ' CUA1°2'LaCu〇S'CuGa〇2' touch, yttrium oxide (10)), oxidized ruthenium), yttrium oxide _ and gold (10) Moreover, the oxide layer 20 is disposed above the transparent conductive layer 18, and after the oxide layer 2 is over, the transparent conductive layer 18 and the metal reflective layer 22 are electrically disposed at appropriate positions of the oxide layer 2Q. Connection, wherein the material of the metal anti-mystery can be gold (Au), Ming (A1), silver (Ag), 姥 (10), which may be selected from the group consisting of dioxin (four), S1__), oxygen her: A1N In this embodiment, the material of the metal reflective layer 22 is exemplified by silver or Ming, and the visible light of the silver or the visible first band 'reflectivity is greater than ·' The body has a high reflectivity characteristic, and since the material of the metal reflective layer 22 has a high diffusion coefficient, it is easy to react with other metals, therefore, The oxide layer 20 is disposed as a transparent layer of the transparent conductive layer 18 and the metal reflective layer 22 M296476, thereby enabling the luminous diode of the present invention to withstand higher process temperatures without the reflection rate of the age of the lens. In addition, due to the barrier of the oxide layer 'to improve the reflection of the metal; the (10) can atlQn phenomenon), and when the light-emitting layer 14 emits light, the light-reflecting layer 22 can also be set to 'reflect light The transparent substrate 1Q is taken out, whereby the light of the light-emitting layer 14 is shielded by the cover-up property, and the problem of the light-emitting of the flip-chip light-emitting diode is not solved.

Then, the diffusion protective layer 26 is disposed above the metal reciprocating layer 22, which provides the same function as the oxide layer 2, so that the metal reflective layer 22 does not react with other metals, wherein the protective layer is dispersed. The material of 26 may be selected from the group consisting of Ti/Ni, Cr/Ni, TiN, TiW, town (W), nickel (Ni) chrome (Mo), palladium (Pd), platinum (Pt) or one of the above combinations of elements. By. Finally, the first electrode 30 is disposed on the region of the light-emitting layer 14 and the N-type semiconductor layer 12 and the p-type semiconductor layer 16 and the light-emitting layer 14 as a cathode electrode of the light-emitting diode, wherein The first electrode 30 can generate good ohmic contact with the N-type semiconductor layer 12, thereby having a lower contact resistance, and the first electrode 30 material can be selected from the group consisting of Ti/Al, Ti/Al/Ti/ Au, Ti/Al/Pt/Au,

Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Al/Cr/Au,

Cr/Al/Pt/Au > Cr/Al/Pd/Au > Cr/Al/Ti/Au ^ Cr/Al/Co/Au > Cr/Al/Ni/Au ^

Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au,

Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/Au,

Nd/Al/Co/Au, Hf/Al/Ti/Au, Hf/Al/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au,

Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au,

Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiNx/Ti/Au, TiNx/Pt/Au,

TiNx/Ni/Au, TiNx/Pd/Au, TiNx/Cr/Au, TiNx/Co/Au, TiWNx/Ti/Au, TiWNx/Pt/Au,

TiMc/Ni/Au, TiWNx/Pd/Au, TiWNx/Cr/Au, TiWNx/Co/Au, NiAl/Pt/Au,

NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au, Ti/NiAl/Cr/Au One of them. In addition, please refer to the fourth figure, which is a schematic diagram of the high-luminance flip-chip light-emitting diode of the present invention. As shown in the figure, the present invention is provided with a first metal above the diffusion protection layer 26. After the bonding layer 28 and the second metal bonding layer 32 are disposed above the first electrode 30, the LED diode created by the 8 M296476 is inverted by the flip chip technology to make the first metal bonding layer 28 and the second The metal bonding layer 32 is bonded to a thermal conductive substrate 32, wherein the first metal bonding layer 28 and the second metal bonding layer may be selected from one of gold, indium (In), and tin (Sn). The heat-conducting substrate 3 may be made of a conductive material such as gold, silver or aluminum, thereby forming a high-luminance flip-chip light-emitting diode of the present invention, and the light-emitting diode chip bonding of the present invention. The heat conductive substrate 32 can effectively dissipate heat dissipation rate and conductivity of the diode. Furthermore, the present invention is different from the conventional flip-chip structure in that a second electrode is required, and the transparent conductive layer 18, the oxide layer 20, the metal reflective layer 22 and the diffusion layer 26 can be As the second electrode, that is, the anode electrode, the negative electrode and the positive electrode are guided through the heat conductive substrate 32 to cause the light emitting diode to emit light. In summary, the present invention relates to a high-luminance, flip-chip light-emitting diode, the bean being bonded to a transparent conductive layer, the oxide layer, the metal reflective layer, the conductive layer, and the diffusion protective layer. With the person who touched the "Just, by this, the 贱 二 减 减 减 减 , , , , 此外 此外 此外 此外 ' ' ' 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本The plate type (P(8), front-illuminated type, side-illuminated type, or surface-turned type) can be used to obtain a higher luminous efficiency when the user creates the light-emitting diode product. The invention is practically - novelty, progressive and available for industrial use, should conform to my speciality, ___ (four), and the early application of the stipulation of the application of the syllabus = not only for the actual change and modification of the invention M296476 [Simplified description of the drawings] The first picture: the schematic diagram of the LEDs of the gallium nitride series grown by the sapphire substrate. · It is a sound map of a conventional flip-chip light-emitting diode · and: Ϊ Ι:Ι::Ι;Ι:::::^-^^^ -t® Create a schematic diagram of the flip-chip light-emitting body of the μ handle. [Main component symbol description] • 1 gemstone substrate 2' gallium nitride Buffer layer 3 N-type gallium nitride ohmic buffer layer 4 Indium gallium nitride light-emitting layer 5 p-type aluminum gallium nitride cladding layer 6 P-type gallium nitride ohmic contact layer 7 p-type transparent metal conductive layer 8 Anode electrode 9 'Cathode electrode•10,,11, wire 12' Conductive support 13 _ conductive region 14 second conductive region 15, pedestal 10 transparent: & plate 12 N-type semiconductor layer 14 luminescent layer 16 p-type semiconductor layer 18 transparent conductive Layer 10 M296476 20 Oxide layer 22 Metal reflective layer 24 Conductive layer 26 Diffusion protective layer 28 First metal bonding layer 30 First electrode 32 Second metal bonding layer 34 Thermally conductive substrate

Claims (1)

M296476 IX. Patent application scope: 1. A high-luminosity flip-chip type—a transparent substrate; a polar body whose main structure includes a semiconductor layer, which is disposed on the light transmissive layer and a P-type semiconductor semiconductor. Between the layers; above the solar and solar substrate, and including a conditional cast layer, wherein the light-emitting layer is interposed between the N-type semi-conductive j-body layer and the P-type transparent conductive layer, which is disposed on the P Above the semiconductor layer and the electric contact with the p-type semiconductor An oxide layer is disposed above the transparent conductive layer; a metal reflective layer is disposed over the oxide layer; electrically connecting the transparent conductive conductive layer to a suitable position of the oxide layer And the metal reflective layer is electrically connected to the metal reflective layer; and the N-type semiconductor layer is electrically connected to the N-diffusion protection layer, and is disposed on the first electrode of the metal reflective layer. a semiconductor layer of the semiconductor layer; a thermally conductive substrate having a first and a second metal connection layer on the surface of the thermally conductive substrate; wherein the first electrode of the light emitting diode and the layer are thermally conductive The substrate is electrically connected to the first and second metal contacts and layers, respectively. earth 2) The high-luminance flip-chip light-emitting diode according to the above-mentioned claim, wherein the thermally conductive substrate is selected from the group consisting of gold (Au), silver (Ag), aluminum (A1), and steel ( Cu), graphite or alloys or composites thereof. 3. The flip-chip light-emitting diode according to claim 1, wherein the transparent conductive layer, the oxide layer, the metal reflective layer and the diffusion protective layer are used as a second electrode. 4. The high-luminance flip-chip light-emitting diode according to claim 1, wherein the transparent substrate is selected from the group consisting of sapphire, SiC, zinc oxide (Zn0), a lithographically-emitting luminescent device according to the first aspect of the invention, wherein the n-type semiconductor layer It can be an N-GaN layer. 12 M296476 6. The high-luminance flip-chip light-emitting diode according to claim 1, wherein the light-emitting layer is selected from the group consisting of InGaN/GaN multiple germanium well structures and three-five elements One of the semiconductor quantum well structures. 7. The high-luminance flip-chip light-emitting diode according to claim 6, wherein the semiconductor quantum well structure comprises AUIribGai-a-bN/AlxInyGai-x-yN, wherein a, b —0 ; 0$a+b <1 ; x,y^O ; 0$x+y<l ; x>c>a. 8. The high-luminance flip-chip light-emitting diode according to claim 1, wherein the P-type semiconductor layer is a P-GaN layer. 9. The high-luminance flip-chip light-emitting diode according to claim 1, wherein the first electrode system is selected from the group consisting of Ti/Al, Ti/Al/Ti/Au, Ti/Al/ Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Al/Cr/Au, Cr/Al/Pt/ Au, Cr/Al/Pd/Au ^ Cr/Al/Ti/Au > Cr/Al/Co/Au ^ Cr/Al/Ni/Au - Pd/Al/Ti/Au ^ Pd/Al/Pt/Au , Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, M /Al/Ni/Au, Nd/Al/Cr/Au, Nd/Al/Co/Au, Hf/Al/Ti/Au, Hf/Al/Pt/Au, Hf/Al/Ni/Au, Hf/Al /Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd /Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiNx/Ti/Au, TiNx/Pt/Au, TiNx/Ni/Au, TiNx/Pd/Au, TiNx/Cr/Au, TiNx /Co/Au, TiWNx/Ti/Au, TiWNx/Pt/Au, TiWNx/Ni/Au, TiWNx/Pd/Au, TiWNx/Cr/Au, TiWNx/Co/Au, NiAl/Pt/Au, NiAl/Cr One of /Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au, Ti/NiAl/Cr/Au By. 10. The high-luminance flip-chip light-emitting diode according to claim i, wherein the transparent conductive layer is selected from the group consisting of copper oxide, tin oxide, indium oxide, indium oxide, and oxidized words. , zinc oxide, magnesia, cadmium tin oxide, indium tin oxide, nickel oxide, Ni/Au, TiN, CuAi〇2, LaCuOS, CuGa〇2, SrCu2〇2, platinum (Pt) or nickel oxide (Ni0x And one of a combination of cerium oxide (Ir〇), cerium oxide (RhO), cerium oxide (Ru0) and gold (Au). 11. The high-luminance flip-chip light-emitting diode according to claim i, wherein the oxide layer is selected from the group consisting of: (10) 2), nitridium (10) bismuth, and nitriding oxygen. One of Shi Xi (Si〇N), Oxidation Ming 13 M296476 (AI2O3), ZnO, A1N and BeN. 12. The high-luminance flip-chip light-emitting diode according to claim 2, wherein the gold-based reflective layer is selected from the group consisting of gold (An), aluminum (Α1), and silver (Ag). One of them, Rh. 13. The high-luminance flip-chip light-emitting diode according to the above-mentioned patent application, wherein the diffusion protective layer may be selected from the group consisting of Ti/M, Cr/Ni, TlN, TlW, tungsten (7), Nickel (5), chromium (9): molybdenum (Mo), palladium (Pd), platinum (Pt) or one of the above combinations of elements. 14. High-luminosity flip chip as described in Item 1 of The light-emitting diode, wherein the first metal bonding layer may be selected from one of gold, indium (ln), and tin (Sn). 15. High luminosity as described in claim i The flip-chip light emitting diode, wherein the second metal bonding layer is selected from one of gold, indium and tin. 14