.M350824 _ -'；： 八、新型說明： 【新型所屬之技術領域】 本創作係有關於-種發光二極體結構’其尤指―種氣化鎵紐光二極體結 構。 【先前技術】 發光二極體(Light Emitting Diode, LED)係以Πΐ-ν或ii-vi族化合物半 ‘導體(GaAs，GaP，AlxGal-xAs，ZnSe...)為材料，所做成具有發光功能(Ught 馨Emitting)的P/N二極體。發光二極體的優點有：發熱量少、壽命長、耗電量少、 單色光發光、反應速度快、耐衝撞、耐天候性佳、體積小、易小型輕量化等等。 然而，發光二極體都是以取代小型白熾燈泡切入各應用市場，如家電產品、資 訊產品、通訊產品之指示燈、背統等，之後絲度產品開發絲並商品化， 更擴大其應用領域，如汽車第三煞車燈、大型戶外看板等等。 按，目前發光二極體的型態分為垂直型發光二極體及覆曰曰^發光二極體， 本創作針對覆晶式發光二極體進行改良，習知之覆晶式發光二極體如中華民國 專利公告第M259321號之「覆晶式發光二極體結構」，如第一圖所示，該篇專利 鲁提供一種覆晶式發光二極體，該發光二極體1’包含一透明基板1〇，、一半導體 堆疊層11’、-透光導電氧化層13，、一擴散阻隔層14，、一金屬反射層15，、 -一第—電極16’及一第二電極17，，該半導體堆疊層！！’内依序具有型氮化 鎵系層111’、-發光層112’、一p型氮化鎵系層113，，並且該半導體堆疊層 位於該透明基板10’的主要表面之上，該透光導電氧化層13，位於該半導 ，堆疊層11’之上，並於該半導體堆疊層11，和該透光導電氧化層13’之間因 歐姆接觸而形成一歐姆接觸接觸層12，’該擴散阻隔層14,位於該透光導電氧 化層13，之上，該金屬反射層15，位於該擴散阻隔層14，之上，該第一電極托， 係與該半導體堆疊層U，中的該11型氮化鎵⑽ιη，電性耦合，該第二電極 Π’係與金屬反射層電性偶合，其中，該半導體堆疊層u，的該發光層112，所 5 M350824 =的光線’直接穿透透明基棚’以及被該金屬反射祕，反射絲，而不 ，過該第一電極17，。由第一圖可知，該第一電極16，與該第二電極广並不 =同平面上’當做成覆晶式發光二極體或進行封裝時，必須利用金屬凸塊 疋於基台上，但因該第一電極與該第二電極不位於同一平面上，導致製作上 的困難。因此為解決上述問題，本創作提供―縦型電極細型電極於同一水平 面上之發光二極體結構。 【新型内容】 本創作之主要目的，在於提供-魏化齡發光二減，轉，該發光二極 構之P if：極與N型雜之-表面位於同-水平面上，以便製作覆晶式發 光二極體、進行封裝製程或進行其他製程。 為達上述咐0稱之各目的與魏，摘作係為—魏化鎵紐光三極體結構， 該發光二極體結構包含—基板、—N型半導體層、—第_^晶層、—第二蟲晶 層P型電極及一 N型電極’該N型半導體層設於該基板，該第一蠢晶層及 該第二羞晶層設於該N型半導體層，該第二蠢晶層位於該第—⑸日層之—侧， =第-蟲晶層及該第二蟲晶層分別包含—發光層及—p型半導體層，該發光層 叹於該N型半雜層’該p型轉體層設於該發光層，該p型電贼於該第— 蟲μ層該N型電極設於該第二蟲晶層，並延伸至該n型半導體層，與該n型 半導體層電性連接’該Ρ型電極與該第_蟲晶層相對之—表面與該Ν型電極與 該第二磊晶層相對之一表面位於同一水平面。 、 【實施方式】 兹為使責審查委員對本創作之結構特徵及所達成之功效有更進一步 解與認識，謹佐以較佳之實施例及配合詳細之綱，說明如後： ^ _睛參閱第二@，係本創作之—較讀施例之發光二滅結構示意圖。如圖 所不’本實施例提供一種氮化鎵系發光二極體結構，該發光二極體结構）包含 •M350824 一基板10、一 N型半導體層12、一第一磊晶層14、一第二磊晶層16、一導電 層17、一 P型電極18及一 N型電極19該基板10之材料選自a12〇3、SiC、GaAs、.M350824 _ -';: VIII. New Description: [New Technology Field] This creation is about a kind of light-emitting diode structure, which means “a gasification gallium neon diode structure”. [Prior Art] Light Emitting Diode (LED) is made of Πΐ-ν or ii-vi compound semi-conductors (GaAs, GaP, AlxGal-xAs, ZnSe...). Light-emitting function (Ught Xin Emitting) P/N diode. The advantages of the light-emitting diode are: low heat generation, long life, low power consumption, monochromatic light emission, fast reaction speed, impact resistance, weather resistance, small size, easy size and light weight, and the like. However, the light-emitting diodes are used to replace small incandescent light bulbs into various application markets, such as home appliances, information products, communication products, indicator lights, back systems, etc., and then the silk product development and commercialization, and expand its application fields. Such as the third car lights, large outdoor billboards and so on. According to the current form of the light-emitting diode, it is divided into a vertical light-emitting diode and a light-emitting diode. This is a modification of the flip-chip light-emitting diode. The conventional flip-chip light-emitting diode is known. As shown in the first figure, the patent of the Republic of China Patent No. M259321, as shown in the first figure, provides a flip-chip type light-emitting diode, and the light-emitting diode 1' includes a light-emitting diode. a transparent substrate 1 , a semiconductor stacked layer 11 ′, a transparent conductive oxide layer 13 , a diffusion barrier layer 14 , a metal reflective layer 15 , a first electrode 16 ′ and a second electrode 17 , , the semiconductor stacking layer! ! 'Inner ordering type gallium nitride layer 111', - light emitting layer 112', a p type gallium nitride layer 113, and the semiconductor stacked layer is located on the main surface of the transparent substrate 10' a photoconductive oxide layer 13 is disposed on the semiconductive, stacked layer 11', and forms an ohmic contact contact layer 12 between the semiconductor stacked layer 11 and the transparent conductive oxide layer 13' due to ohmic contact, ' The diffusion barrier layer 14 is disposed on the transparent conductive oxide layer 13. The metal reflective layer 15 is disposed on the diffusion barrier layer 14. The first electrode holder is connected to the semiconductor stacked layer U. The 11-type gallium nitride (10) is electrically coupled, and the second electrode is electrically coupled to the metal reflective layer, wherein the light-emitting layer 112 of the semiconductor stacked layer u, 5 M350824 = light is directly worn The transparent base shed 'is reflected by the metal and reflects the wire without passing through the first electrode 17. As can be seen from the first figure, the first electrode 16 and the second electrode are not in the same plane. When forming a flip-chip light-emitting diode or packaging, it is necessary to use metal bumps on the base. However, since the first electrode and the second electrode are not on the same plane, it is difficult to manufacture. Therefore, in order to solve the above problems, the present invention provides a light-emitting diode structure of a 縦-type electrode fine electrode on the same horizontal surface. [New content] The main purpose of this creation is to provide - Wei Hualing's luminescence reduction, turn, the P if: pole and N type miscellaneous - the surface is on the same-horizontal surface, in order to make a flip-chip light Polar body, encapsulation process or other processes. In order to achieve the above-mentioned objectives and Wei, the extract is a Wei-Gallium neon light-triode structure, and the light-emitting diode structure comprises a substrate, an N-type semiconductor layer, a _^ crystal layer, a second crystal layer P-type electrode and an N-type electrode 'the N-type semiconductor layer is disposed on the substrate, the first doped layer and the second smear layer are disposed on the N-type semiconductor layer, the second stupid The crystal layer is located on the side of the first (5) day layer, and the = first crystal layer and the second crystal layer respectively comprise a light-emitting layer and a p-type semiconductor layer, the light-emitting layer being sighed by the N-type semi-hybrid layer The p-type swivel layer is disposed on the light-emitting layer, and the p-type electric thief is disposed on the second insect layer in the second insect layer and extends to the n-type semiconductor layer, and the n-type semiconductor The layer is electrically connected to the surface of the Ρ-type electrode and the surface of the 磊-type electrode is at the same level as the surface of the 磊-type electrode and the second epitaxial layer. [Embodiment] In order to provide further clarification and understanding of the structural features and the achievable effects of this creation, please refer to the preferred embodiment and the detailed outline to illustrate the following: ^ _ Two @, is the creation of this book - a schematic diagram of the structure of the light-emitting two-off structure of the reading example. As shown in the figure, the gallium nitride-based light-emitting diode structure includes a substrate M10, an N-type semiconductor layer 12, a first epitaxial layer 14, and a first substrate. a second epitaxial layer 16, a conductive layer 17, a P-type electrode 18 and an N-type electrode 19. The material of the substrate 10 is selected from the group consisting of a12〇3, SiC, GaAs,
GaN、AIN、GaP、Si、ZnO、MnO及上述之任意組合中擇其一者，該n型半導體層 12係設於該基板10，該N型半導體層12之材料為選自氮化鋁、氮化鎵、氮化 紹鎵、氮化銦鎵、氮化銘銦鎵及其他由氮與I呂、銦、鎵三種元素中至少一種元One of GaN, AIN, GaP, Si, ZnO, MnO, and any combination of the above, the n-type semiconductor layer 12 is provided on the substrate 10, and the material of the N-type semiconductor layer 12 is selected from aluminum nitride. Gallium nitride, gallium nitride, indium gallium nitride, nitrided indium gallium and other elements of at least one of nitrogen, I, indium, gallium
素所組成的化合物中擇其一者，該第一磊晶層14及該第二磊晶層16設於該N 型半導體層12上，該第二磊晶層16位於該第一磊晶層14之一側，該第一磊晶 層14及該第一蟲晶層16分別包含一發光層mi、161及一P型半導體層143、 163，該發光層141、161設於該N型半導體層12，該p型半導體層143、163設 於該發光層14卜161，該發光層14卜161為多量子井結構，該發光層14卜161 及該P型半導體層143、163之材料係分別選自氮化紹、氮化鎵、氮化銘鎵、氮 化銦鎵及IUb細鎵及其他由氮触、姻、鎵三種元素巾種元素所組成 的化合物中擇其-者。該導電層17設於該第—蟲晶層14，該導電層17之材料 係選自Ni/Au、氧化铜錫、氧化鎮錫、氧化錄錫、透明導電黏劑及上述所組成材 料群凡組中之組合中擇其-者。該p型電極18設於該導電層17上，該N型電極 19設於該第二為層16上’並延伸至該N型半導體層丨2，與該n型半導體層 12電性連接^該N型電極19未與該第二蟲晶層16連接的—表面與該p型電 該導電層17的一表面位於同一水平面上，如此可便利製作覆晶式發One of the compounds consisting of the first epitaxial layer 14 and the second epitaxial layer 16 is disposed on the N-type semiconductor layer 12, and the second epitaxial layer 16 is located on the first epitaxial layer The first epitaxial layer 14 and the first crystal layer 16 respectively include a light emitting layer mi, 161 and a P type semiconductor layer 143, 163, and the light emitting layer 141, 161 is disposed on the N type semiconductor. The layer 12, the p-type semiconductor layers 143, 163 are disposed on the light-emitting layer 14 161, the light-emitting layer 14 161 is a multi-quantum well structure, and the light-emitting layer 14 161 and the material layers of the P-type semiconductor layers 143, 163 They are selected from the group consisting of nitriding, gallium nitride, nitriding gallium, indium gallium nitride and IUb fine gallium, and other compounds consisting of nitrogen, marshalling and gallium. The conductive layer 17 is disposed on the first insect layer 14 , and the material of the conductive layer 17 is selected from the group consisting of Ni/Au, copper tin oxide, oxidized tin, oxidized tin, transparent conductive adhesive, and the above-mentioned constituent materials. Select one of the combinations in the group. The p-type electrode 18 is disposed on the conductive layer 17. The N-type electrode 19 is disposed on the second layer 16 and extends to the N-type semiconductor layer 丨2, and is electrically connected to the n-type semiconductor layer 12. The surface of the N-type electrode 19 not connected to the second crystal layer 16 is on the same level as the surface of the p-type electrically conductive layer 17, so that the flip chip can be easily fabricated.
刑^麟订封褒製程。另，本創作之發光二極體結構1之P型電極18與N 鱗Π/ 5又於3亥發光二極體結構1兩侧，沒有交叉排列，減少該P型電極18 〃、該N型電極19間之電性問題。 圖所較佳實樹狀發光二極魏構轉圖。如 同在於，為了光二鋪職，本實補絲二®實施例不 電性問題，於該第I蟲!^19與該第二蟲晶層16之？型半導體層163發生 氧化石夕、-氧化石Γ 1 置一絕緣層15，舰緣層15之材料係選自二 化鋅、氧化_、ιΓ 氮化物、非晶辭物、賴晶體半導體、氧 鈦、細敗"敝餘合情其一者。 明參閱第四圖，係本_之另—較佳實_之發光二極體結構示 7 /-.M350824 '；意圖及本創作之另一較佳實施例之發光二極體結構示意圖。如圖所示，本實施 例提供一種氮化鎵系發光二極體結構，本實施例與第三圖實施例不同在於，本 實施例之發光二極體結構丨更包含一反射層13，該反射層13之材料選自A1、The penalty is to seal the process. In addition, the P-type electrode 18 of the light-emitting diode structure 1 of the present invention and the N-scale Π / 5 are on both sides of the 3 illuminating diode structure 1 without cross-arrangement, reducing the P-type electrode 18 〃, the N-type Electrical problems between the electrodes 19. The picture shows a better real tree-like luminescent dipole-like structure. For the same reason, in order to work in the light, the embodiment of the present invention is not electrical, in the first insect! ^19 and the second insect layer 16? The type semiconductor layer 163 is oxidized, and the oxidized layer is provided with an insulating layer 15. The material of the rim layer 15 is selected from the group consisting of zinc dioxide, oxidized _, ι 氮化 nitride, amorphous ruthenium, lyon crystal semiconductor, and oxygen. Titanium, fine defeat " Referring to the fourth figure, the structure of the light-emitting diode of the present invention is shown as a schematic diagram of the light-emitting diode of another preferred embodiment of the present invention. As shown in the figure, the present embodiment provides a gallium nitride-based light-emitting diode structure. The embodiment is different from the third embodiment in that the light-emitting diode structure of the present embodiment further includes a reflective layer 13 . The material of the reflective layer 13 is selected from the group A1.
Ag、Pt、Ni、Cr、Pd、Sn、Au、Zn、Ti、Pb、Ge、Cu、AuBe、AuGe、PbSn、AuZn 及上述所構成材料組群中之組合中擇其一者。該反射層13設於該基板1〇與該N 型半導體層12之間；或者，該反射層13設於該基板1〇，並與該N型半導體層 12相對，以反射該發光層141、161所發出之光線，提高該發光二極體結構i之 發光效率。另第二圖實施例至第四c圖實施例所提供之發光二極體結構，可於 該P型電極與該N型電極分別設置一金屬打線，進行封裝製程。 請參閱第五圖’係本創作之另-較佳實補之發光二極體結構示意圖。如 圖所不，本實施例提供-覆晶式發光二鋪結構，先將第三圖實酬之發光二 極體結構1倒置於-基台2上，該基台2包含一第一導電層21及一第二導電層 23 ’該第-導電層21對應該p型電極18設置於該基台2，該第二導電層四對 應該N型電極19設置⑽基台2 ’該p型電極18及該N型電極19直接分別虚 該第-導電層2丨及該第二導電層23電性連接，形成職晶式發光二鋪。因 該N型電極19與該P型電極18的表面位於同—平面上，所以不必_金屬凸 塊連接該P型電極18或該N型電極19至該基台2上。 、 請參閱第六A及六B圖，係本創作之另__較佳實施例之發光二極體 意圖及梢作之另-較佳實施例之發光二極體結構示意圖。如騎示，本實施 例知供-種覆晶式發光二極體，與第五圖實施例不同在於，該第一蟲 有一第-絕緣層ill，該第一反射層131設於該第一絕 阳 11 q洲*於兮绝—r； λι a 101 、緣層111 ’ 5亥第一絕緣層 汉於該第-反射層13卜該第一絕緣層m、該第—反 緣層113位於該導電層17之顯（請參閱第丄 -第一絕 N型電極19之間設有-第二反射層133二 ^於該絕緣層15與該 _有-第三絕緣層115 (請來閲第1 ^第:反射層133與《型電極19之 u關如此可反 射之光線，提升該覆晶式發光二極體之發光效率。 Μ層14卜⑹發 第二絕緣層113及該第三絕緣層115之材科選、以第一絕緣層出、該 氮化石夕、氮化物、非晶體铸體、非結晶體半導體、; 8 M350824 氧及上述任思組合中擇其-者，該第-反射層131及該第二反射層133 ，料刀别選自 A卜 Ag、Pt、Ni、cr、Pd、Sn、Au、Zn、Ti、Pb、Ge、Cu、AuBe、 uGe、PbSn、AuZn及上述所構成材料組群中之組合中擇其一者。 由上述可知’本創作提供_魏化鎵紐光二鋪結構，紐光二極體結 ^ P 極與N型電極之—表面位於同—水平位置，以便製作覆晶式發光二 及進行封裴製程’本創作所提供之氮化鎵系發光二極體結構亦達到提升發 光效率之功效。 進步性及可供產業利用者，應符 依法提出創作專利申請，祈鈞Ag, Pt, Ni, Cr, Pd, Sn, Au, Zn, Ti, Pb, Ge, Cu, AuBe, AuGe, PbSn, AuZn, and combinations of the above-mentioned constituent materials are selected. The reflective layer 13 is disposed between the substrate 1 and the N-type semiconductor layer 12; or the reflective layer 13 is disposed on the substrate 1A and opposed to the N-type semiconductor layer 12 to reflect the light-emitting layer 141, The light emitted by 161 increases the luminous efficiency of the light-emitting diode structure i. In another embodiment, the LED structure provided in the embodiment of the second embodiment can be provided with a metal wire for the P-type electrode and the N-type electrode to perform a packaging process. Please refer to the fifth figure, which is a schematic diagram of the structure of the light-emitting diode. As shown in the figure, the present embodiment provides a flip-chip light-emitting two-ply structure, in which the light-emitting diode structure 1 of the third figure is first placed on the base 2, and the base 2 includes a first conductive layer. 21 and a second conductive layer 23', the first conductive layer 21 is disposed on the base 2 corresponding to the p-type electrode 18, and the second conductive layer is disposed opposite to the N-type electrode 19 (10) the base 2' the p-type electrode 18 and the N-type electrode 19 directly connect the first conductive layer 2丨 and the second conductive layer 23 to each other to form a professional crystal light-emitting two-layer. Since the N-type electrode 19 and the surface of the P-type electrode 18 are located on the same plane, it is not necessary to connect the P-type electrode 18 or the N-type electrode 19 to the base 2 by a metal bump. Please refer to Figures 6A and 6B for a schematic diagram of the structure of the light-emitting diode of the preferred embodiment of the light-emitting diode of the preferred embodiment. For example, in the present embodiment, a flip-chip light-emitting diode is provided, which differs from the fifth embodiment in that the first insect has a first insulating layer ill, and the first reflective layer 131 is disposed on the first The first insulating layer m and the first insulating layer 113 are located in the first insulating layer m. The conductive layer 17 is displayed (refer to the first 丄-first N-type electrode 19 is provided between the second reflective layer 133 and the insulating layer 15 and the _--the third insulating layer 115 (please read 1st: the reflective layer 133 and the "electrode 19" are such that the light that can be reflected can enhance the luminous efficiency of the flip-chip light-emitting diode. The germanium layer 14 (6) emits the second insulating layer 113 and the third The material of the insulating layer 115 is selected from the first insulating layer, the nitride nitride, the nitride, the amorphous cast, the amorphous semiconductor, the 8 M350824 oxygen, and the above-mentioned combination of the above-mentioned ideas, the first- The reflective layer 131 and the second reflective layer 133 are selected from the group consisting of A, Ag, Pt, Ni, Cr, Pd, Sn, Au, Zn, Ti, Pb, Ge, Cu, AuBe, uGe, PbSn, AuZn and Above One of the combinations of constituent material groups. It can be seen from the above that 'this creation provides _ Weihua gallium New Light two-story structure, the neon diode junction ^ P pole and the N-type electrode - the surface is in the same - horizontal position, In order to produce a flip-chip luminescence II and a sealing process, the GaN-based luminescent diode structure provided by the present invention also achieves the effect of improving luminous efficiency. The progressive and available industrial users should submit a patent for creation according to law. Apply, pray
綜上所述’本創作係實為一具有新賴性、 合我國專利法所規定之專利巾請要件無疑，爰 局早曰賜准專利，至感為禱。 始L :僅為本創作之—較佳實施例而已，並非用來限定本創作實 施之關’舉驗本_申請專繼圍騎之 、 均等變化與修飾，均應包括於本創作之申請專利範2 精神所為之 【圖式簡單說明】 第1圖：習知覆晶式發光二極體結構示意圖； 第2圖：補作之-較佳實施例之發光二極體結構示意圖； _第3圖：本創作之另-較佳實施例之發光二極體結構示意圖； 第4A圖:本創作之另一較佳實施例之發光二極體結構示意圖； 第4B圖.本創作之另一較佳實施例之發光二極體結構示意圖； 第5圖：本創作之另—紐實細之發光二極觀構示意圖； 第6A圖.本創作之另—較佳實施例之發光二極體結構示意圖；及 第6B圖.本創作之另一較佳實施例之發光二極體結構示意圖。 M350824 >；【主要元件符號說明】 γ 發光二極體 10’ 透明基板 11’半導體堆疊層 111’ η型IU匕鎵系層 112’發光層 113’ ρ型IL化鎵系層 . 13’透光導電氧化層 14’擴散阻隔層 籲15，金屬反射層 16’第一電極 17’第二電極 1 發光二極體結構 10基板 111第一絕緣層 113第二絕緣層 115第三絕緣層 12Ν型半導體層 13 反射層 131第一反射層 133第二反射層 14 第一磊晶層 141發光層 143Ρ型半導體層 15 絕緣層 16 第二磊晶層 161發光層 10 M350824 ' 163P型半導體層 17 導電層 18P型電極 19N型電極 2 基台 21 第一導電層 23 第二導電層In summary, the Department of Creation is a new patent, and the patents required by China's Patent Law are undoubtedly required, and the Bureau has granted patents as soon as possible.始L: It is only for the purpose of this creation - the preferred embodiment, and is not intended to limit the implementation of this creation. The application of the application is subject to the patent application of this creation. Fan 2 Spirituality [Simplified Schematic Description] Figure 1: Schematic diagram of a conventional flip-chip light-emitting diode structure; Figure 2: Supplementary structure - a schematic diagram of a light-emitting diode structure of a preferred embodiment; The schematic diagram of the structure of the light-emitting diode of another preferred embodiment of the present invention; FIG. 4A is a schematic view showing the structure of the light-emitting diode of another preferred embodiment of the present invention; FIG. 4B is another preferred embodiment of the present invention. Schematic diagram of the structure of the light-emitting diode of the embodiment; FIG. 5: Schematic diagram of the light-emitting diode of the other embodiment of the present invention; FIG. 6A. Schematic diagram of the structure of the light-emitting diode of another preferred embodiment of the present invention And FIG. 6B is a schematic view showing the structure of the light-emitting diode of another preferred embodiment of the present invention. M350824 >; [Main component symbol description] γ light-emitting diode 10' transparent substrate 11' semiconductor stacked layer 111' n-type IU 匕 gallium layer 112' luminescent layer 113' p-type IL gallium layer. 13' Photoconductive oxide layer 14' diffusion barrier layer 15, metal reflective layer 16' first electrode 17' second electrode 1 light emitting diode structure 10 substrate 111 first insulating layer 113 second insulating layer 115 third insulating layer 12 Semiconductor layer 13 reflective layer 131 first reflective layer 133 second reflective layer 14 first epitaxial layer 141 light emitting layer 143 germanium semiconductor layer 15 insulating layer 16 second epitaxial layer 161 light emitting layer 10 M350824 '163P type semiconductor layer 17 conductive layer 18P type electrode 19N type electrode 2 base 21 first conductive layer 23 second conductive layer