TWI497763B - Horizontal type light emitting diode device and the manufacturing method thereof - Google Patents

Description

Horizontal light-emitting diode element and method of manufacturing same

The present invention relates to a light emitting diode (LED) element structure and a method of fabricating the same, and more particularly to a structure of a horizontal light emitting diode having a highly reflective Bragg reflection layer and a method of fabricating the same.

When the light generated by the active layer of the conventional light-emitting diode is incident on the gallium arsenide substrate, since the gallium arsenide energy gap is small, the incident light is absorbed by the gallium arsenide substrate, and the luminous efficiency is lowered. In order to avoid the light absorption of the substrate, there have been some literatures that have revealed techniques for improving the brightness of the LED, such as adding a Bragg Reflector (DBR) to the gallium arsenide substrate, thereby reflecting the incident on the gallium arsenide substrate. Light and reduce the absorption of gallium arsenide substrates. However, such a DBR reflective structure is formed by stacking quaternary epitaxial growth materials, and the refractive index difference between the laminates is not large, and can only effectively reflect light that is closer to the vertical incidence on the gallium arsenide substrate, and the reflectance is about 80%. And the wavelength range of the reflected light is small, and the effect is not large.

In addition, the electrodes are formed on different sides, which tends to cause poor adhesion between the electrodes and the substrate during the packaging process, resulting in poor electrical properties and increased resistance.

An embodiment of the present invention provides a light emitting diode device structure, comprising: a conductive growth substrate having a first region and a second region on an upper surface; and a semiconductor epitaxial laminate disposed on the first region of the conductive growth substrate The semiconductor epitaxial stack comprises: a reflective layer on the first region; a first semiconductor layer having a first conductive property on the reflective layer; and an active layer on the first semiconductor layer; And a second semiconductor layer having a second conductive property on the active layer; a first electrode on the second semiconductor layer; and a second electrode on the second region, the epitaxial stack of the conductive growth substrate and the semiconductor The layer is electrically connected, wherein the first electrode and the second electrode are located on the same side of the conductive growth substrate.

The invention provides a horizontal light-emitting diode structure with electrodes on the same side and a manufacturing method thereof. Referring to FIG. 1A and FIG. 1B , a top view of a horizontal LED structure on the same side of the first electrode and the second electrode and a dotted line along the V-V′ according to the first embodiment of the present invention are illustrated. Side view of the section. The LED structure 100 includes a conductive growth substrate 102 having an upper surface 103 defining a first region 1A and a second region 1B. A semiconductor epitaxial layer 101 is disposed on the first region 1A. The semiconductor epitaxial layer stack 101 includes a reflective layer 104 sequentially stacked on the first region 1A, an n-type semiconductor layer (eg, an n-cladding layer) 106, an active layer 108, and a p-type. A semiconductor layer (eg, a p-cladding layer) 110, a transparent conductive layer 112 is disposed on the p-type semiconductor layer 110, a first electrode 114 is disposed on the transparent conductive layer 112, and a stacked retention portion 116 is located on the conductive growth substrate. On the second region 1B of the 102, a second electrode 118 is formed on the second region 1B of the conductive growth substrate 102 and covers the laminate retention portion 116.

Fig. 1C is a schematic view showing the structure of a semiconductor epitaxial laminate according to the first embodiment of the present invention. In the horizontal LED structure process disclosed in the present invention, a conductive growth substrate 102 is first provided. In the first embodiment of the present invention, the conductive growth substrate 102 has conductivity for growing or carrying a semiconductor epitaxial stack. Layer 101 is thereon. Materials constituting the conductive growth substrate 101 include, but are not limited to, germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), tantalum carbide (SiC), germanium (Si), One or a combination of gallium nitride (GaN). The conductive growth substrate has an upper surface 103 and defines a first region 1A and a second region 1B.

Then, a reflective layer 104 is formed on the upper surface 103 of the conductive growth substrate. The reflective layer 104 is a Bragg reflection layer composed of a plurality of easily oxidized semiconductor layers and a stack of electrodes which are not easily oxidized. For example, alternating stacking of aluminum arsenide (AlAs) / aluminum gallium arsenide (AlGaAs), alternating stacking of aluminum arsenide (AlAs) / gallium arsenide (GaAs), aluminum arsenide (AlAs) / aluminum gallium phosphide (AlGaInP) Interactive stacking, or alternating stacking of aluminum arsenide (AlAs)/indium gallium phosphide (InGaP), in which aluminum arsenide is a semiconductor layer that is easily oxidized, and others that are matched with aluminum arsenide are not easily oxidized. Semiconductor layer.

Next, over the reflective layer 104, an n-type semiconductor layer 106 is formed. The material of the n-type semiconductor layer 106 includes, but is not limited to, aluminum gallium indium phosphide, gallium arsenide, or indium gallium phosphide. The composition of aluminum gallium indium phosphide is (Al _x Ga _1-x ) _0.5 In _0.5 P, of which 0.5 is only an example, such as (Al _x Ga _1-x ) _y In _y P, where x and y values only need 0 <x<1, y<1 can be.

An active layer 108 is formed on the n-type semiconductor layer 106. The material of the active layer includes, but is not limited to, aluminum gallium indium phosphide, and the composition thereof is (Al _x Ga _1-x ) _0.5 In _0.5 P, wherein 0.5 is merely an illustration. . Taking the light-emitting diode as an example, the wavelength of the emitted light can be adjusted by changing the physical and chemical composition of one or more layers in the active layer 108. Commonly used materials are aluminum gallium phosphide indium series, aluminum indium phosphide series, aluminum gallium indium nitride (AlGaInN) series, and zinc oxide (ZnO) series. It can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MWQ). Taking a multi-layer quantum well structure as an example, it has multiple barrier layers and quantum well layers stacked alternately, wherein the barrier layer is (Al _y Ga _1-y ) _0.5 In _0.5 P, 0.5≦y≦0.8; quantum well layer It is In _0.5 Ga _0.5 P.

A p-type semiconductor layer 110 is formed over the active layer 108, such as p-type gallium phosphide (GaP), and the material thereof includes, but is not limited to, aluminum gallium indium phosphide (lnGaAlP), and its composition is (Al _x Ga _{1 -x} ) _0.5 In _0.5 P, where 0.5 is only an illustration, (Al _x Ga _1-x ) _y In _y P, where x and y values need only 0 < x < 1, y < 1. The n-type semiconductor layer 106 has a thickness of about 3 μm, the p-type semiconductor layer 110 has a thickness of about 10 μm, and the active layer 1108 has a thickness of about 0.3 to 1.5 μm.

A transparent conductive layer 112 is formed by electron beam evaporation or sputtering to cover the p-type semiconductor layer 110. The transparent conductive layer 112 may be made of a metal oxide such as indium tin oxide (ITO) or cadmium tin oxide (CTO). Any of tin antimony oxide, indium zinc oxide (IZO), zinc aluminum oxide (AZO), gallium zinc oxide (GZO), zinc oxide (ZnO), and zinc tin oxide; the thickness is about 0.005 μm to 0.6 μm. .

Referring to FIG. 1D, the semiconductor epitaxial stack on the second region 1B is patterned and etched to form an exposed portion 120 and a stacked remaining portion 116. The exposed portion 120 is exposed to conductive epitaxial growth after etching the semiconductor epitaxial layer. The substrate 102 is formed, wherein the laminate retention portion 116 is formed by a portion of the semiconductor epitaxial stack retained when etching the semiconductor epitaxial stack. The stack retention portion 116 may comprise a composition material that is identical to the semiconductor epitaxial layer stack 101, for example, having a reflective layer 104, an n-type semiconductor layer 106, an active layer 108, a p-type semiconductor layer 110, or a transparent conductive layer 112. Or a reflective layer 104; or a plurality of layers having a semiconductor epitaxial layer 101, such as two layers of epitaxial structures having a reflective layer 104 and an n-type semiconductor layer 106; a reflective layer 104, an n-type semiconductor layer 106, and The three-layer epitaxial structure of the active layer 108; the four-layer epitaxial structure of the reflective layer 104, the n-type semiconductor layer 106, the active layer 108, and the p-type semiconductor layer 110.

Referring to FIG. 2A, the first electrode 114 is formed on the transparent conductive layer 112, and the second electrode 118 is formed on the second region 1B to completely cover the laminate retaining portion 116 and cover a portion of the exposed portion 120. The second electrode 118 and the exposed portion 120 are in direct contact with each other, and are electrically connected to the conductive epitaxial layer 101 through the direct contact with the conductive growth substrate 102. The LED structure 100 is completed. The second electrode 118 may also partially cover the laminate retaining portion 116 and partially cover the exposed portion 120 as shown in FIGS. 2B and 2C. The function of the layer-retaining portion 116 is to enhance the adhesion of the second electrode 118 and the conductive growth substrate 102, and to prevent the second electrode 118 from being peeled off due to poor adhesion.

3 is a side elevational view of a horizontal light emitting diode structure 1001 according to a second embodiment of the present invention. The structure of the semiconductor epitaxial layer stack 1011 and the process steps thereof are the same as those of the semiconductor epitaxial layer stack 101 of the first embodiment, except that the semiconductor epitaxial layer stack 1011 on the second region 11B is patterned and etched to form a The exposed portion 1201 and the stacked portion 1161 are formed by exposing the reflective layer 1041 after the exposed portion 1201 is etched. The laminate retention portion 1161 is formed by a portion of the semiconductor epitaxial laminate 1011 retained when the semiconductor epitaxial laminate 1011 is etched. The laminate retention portion 1161 may have a composition having only the n-type semiconductor layer 1061; or a semiconductor epitaxial laminate 1011 having a plurality of layers thereof, for example, a two-layer epitaxial structure having an n-type semiconductor layer 1061 and an active layer 1081; an n-type semiconductor The layer 1061, the active layer 1081, and the p-type semiconductor layer 1101 have a three-layer epitaxial structure; the n-type semiconductor layer 1061, the active layer 1081, the p-type semiconductor layer 1101, and the transparent conductive layer 1121 have a four-layer structure.

Finally, the first electrode 1141 is formed on the transparent conductive layer 1121, and the second electrode 1181 is formed on the second region 11B to completely cover the laminated remaining portion 1161 and cover the exposed portion 1201 of the portion. The second electrode 1181 and the exposed portion 1201 are in direct contact with each other, and the reflective layer 1041 and the conductive growth substrate 1021 are electrically connected to the semiconductor epitaxial laminate 1011. The LED structure 1001 is completed. The second electrode 1181 may also partially cover the laminate retaining portion 1161 and partially cover the exposed portion 1201. The function of the laminate retention portion 1161 is to enhance the adhesion between the second second electrode 1181 and the conductive growth substrate 1021, and to prevent the second electrode 1181 from being peeled off due to poor adhesion.

Figure 4 is a side elevational view of a horizontal light emitting diode structure 1002 in accordance with a third embodiment of the present invention. The structure of the semiconductor epitaxial layer stack 1012 and its processing steps are the same as those of the first and second embodiments of the semiconductor epitaxial layer stacks 101, 1011, except that the semiconductor epitaxial layer stack 1012 on the second region 111B is After the patterned etching, an exposed portion 1202 and a stacked remaining portion 1162 are formed. The exposed portion 1202 is formed by etching the semiconductor epitaxial layer 1012 and exposing the n-type semiconductor layer 1062. The stacked remaining portion 1162 is an etched semiconductor strip. A portion of the semiconductor epitaxial stack 1012 retained by the crystalline stack 1012 is formed. The layer retention portion 1162 may be composed of only the n-type semiconductor layer 1062; or a semiconductor epitaxial layer 1012 having a plurality of layers, for example, a two-layer epitaxial structure of the n-type semiconductor layer 1062 and the active layer 1082; an n-type semiconductor layer The optical layer 1082, the three-layer epitaxial structure of the p-type semiconductor layer 1102, and the four-layer structure of the n-type semiconductor layer 1062, the active layer 1082, the p-type semiconductor layer 1102, and the transparent conductive layer 1122.

Finally, the first electrode 1142 is formed on the transparent conductive layer 1122, and the second electrode 1182 is formed on the second region 111B, completely covering the laminate retaining portion 1162 and covering a portion of the exposed portion 1202. The second electrode 1182 is in direct contact with the partially exposed portion 1202, and is electrically connected by the n-type semiconductor layer 1062, the reflective layer 1042, and the conductive growth substrate 1022 and the semiconductor epitaxial laminate 1012. The light emitting diode structure 1002 is completed. . The second electrode 1182 may also partially cover the laminate retention portion 1162 and partially cover the exposed portion 1202. The function of the lamination retention portion 1162 is to enhance the adhesion of the second electrode 1182 and the conductive growth substrate 1022, and to prevent the second electrode 1182 from being peeled off due to poor adhesion.

As shown in FIG. 5A, the reflective layer 104 in the first embodiment described above may be a Bragg reflection layer composed of a plurality of pairs of third semiconductor layers 104c and fourth semiconductor layers 104b alternately stacked. In the figure, three pairs of the third semiconductor layer 104c and the fourth semiconductor layer 104b are alternately stacked for explanation, and the logarithm is not limited. The third semiconductor layer 104c may be aluminum arsenide (AlAs). The fourth semiconductor layer 104b may be composed of aluminum gallium arsenide, gallium arsenide, aluminum gallium phosphide, or indium gallium phosphide. As shown in FIG. 5B, since the characteristics of the third semiconductor layer 104c are more oxidized than the fourth semiconductor layer 104b, water vapor is introduced into the light-emitting diode during the process, and the temperature is about 300 ° C to 800 ° C. The three semiconductor layers 104c start to oxidize from the outside to the inside to form an aluminum oxide (Al _m O _n ) layer 104a, where m and n are integers. The intermediate portion is still the unoxidized third semiconductor layer 104c. The oxidation rate of the third semiconductor layer 104c is faster as the temperature is higher, and is also faster as the aluminum content is higher. In the oxidation process, in the present embodiment, the refractive index of alumina is 1.6, and the fourth semiconductor layer 104b, such as a low aluminum content aluminum arsenide layer or an aluminum gallium phosphide layer, has a refractive index greater than 3, The refractive index of the two is very different, so that the reflective layer 104 formed can make the reflectance between the wavelength range of 580-630 nm almost 100%, and can effectively reflect the light emitted by the active layer 108. Although in the present embodiment, the reflective layer 104 is located between the conductive growth substrate 102 and the n-type semiconductor layer 106, it is not intended to limit the present invention. The Bragg reflection layer of this embodiment can also be placed in the n-type semiconductor layer 106 to achieve the desired effect of the present invention.

Please refer to FIGS. 6A and 6B, which are a top view of the LED structure 200 and a cross-sectional view taken along the line W-W' of the fourth embodiment of the present invention. The horizontal light emitting diode structure 200 of the present embodiment includes a conductive growth substrate 202 having an upper surface 203 defining a first region 2A and a second region 2B, and a semiconductor epitaxial layer 201 being disposed on the conductive growth substrate 202. A region 2A includes a reflective layer 204, an n-type semiconductor layer 206, an active layer 208, and a p-type semiconductor layer 210 which are sequentially stacked on the conductive growth substrate 202. A transparent conductive layer 212 is on the p-type semiconductor layer 210. A first electrode 214 is formed on the transparent conductive layer 212, a laminated retention portion 216 is formed on the second region 2B of the conductive growth substrate 202, and a second electrode 218 is formed on the conductive growth substrate 202 and covers the laminate retention portion 216. . The reflective layer 204 may be a Bragg reflective layer including a third semiconductor layer 204c and a fourth semiconductor layer 204b alternately stacked. This embodiment is described by the reflection layer 204 formed by the three pairs of the third semiconductor layer 204c and the fourth semiconductor layer 204b. In order to shorten the oxidation time, the upper surface of the light emitting diode structure 200 is etched to the conductive growth substrate 202 to form a plurality of holes 240, so that the reflective layer 204 can increase the area of oxidation of the third semiconductor layer 204c by the holes 240. . Therefore, by the influence of the etching holes, the third semiconductor layer 204c starts to oxidize from the outside in four directions, and the plurality of holes 204 start to oxidize from the inside to the outside to form an aluminum oxide (Al _x O _y ) layer 204a. Finally, the first electrode 224 is formed on the transparent conductive layer 212, and the second electrode 218 is formed on the conductive growth substrate 202 and covers the laminate retention portion 216 to complete the LED structure 200. In this embodiment, the light-emitting diode structure has a plurality of holes 240 therein. Although the active layer area of the portion is sacrificed, the area of the high-reflectivity reflective layer is increased to achieve a higher reflectance. Since the Bragg reflection layer formed of the aluminum oxide layer can increase the reflectance of the visible light wavelength of 580-630 nm, the luminous efficiency of the light-emitting diode can be increased. In addition, the holes 240 in this embodiment may also be etched from the upper surface of the LED structure 200, but are not etched to the conductive growth substrate 202, and only a portion of the sidewalls of the reflective layer 204 (not shown) are exposed. The semiconductor epitaxial stacks 101, 1011, and 1012 of the first to third embodiments may also form a plurality of holes such that the reflective layers 104, 1041, and 1042 may be simultaneously oxidized by the holes in addition to the oxidation around the periphery.

Referring to FIG. 7A, a horizontal light emitting diode structure 300 according to a fifth embodiment of the present invention includes a conductive growth substrate 302 having an upper surface 303 defined with a first region 3A and a second region 3B. The semiconductor epitaxial layer stack 301 is disposed on the first region 3A of the conductive growth substrate 302. The semiconductor epitaxial layer stack 301 includes a reflective layer 304, an n-type semiconductor layer 306, and an active layer stacked on the conductive growth substrate 302. Active layer) 308, p-type semiconductor layer 310. A transparent conductive layer 312 is located on the p-type semiconductor layer 310. A first electrode 314 is formed on the transparent conductive layer 312, a recess 326 is formed on the second region 3B of the conductive growth substrate 302, and a second electrode 318 is formed on the conductive growth substrate 302 and covers the recess 326. The composition of the semiconductor epitaxial layer stack 301 and the manufacturing steps thereof are as described in the first embodiment and the fourth embodiment. After the fabrication of the semiconductor epitaxial layer stack 301 is completed, the semiconductor epitaxial layer stack 301 on the second region 3B is etched to expose the conductive growth substrate 302. The conductive grown substrate second region 3B is then patterned and etched to form a recess 326, and then a second electrode 318 is formed on the second region B and covers the recess 326 and the exposed portion 320 of the cover portion. The second electrode 318 is in direct contact with the conductive growth substrate 302, and is electrically connected to the conductive epitaxial growth substrate 302 and the semiconductor epitaxial laminate 301. The second electrode 318 may also partially cover the recess 326 and partially cover the exposed portion 320 as shown in FIG. 7B. The function of the recess 326 is to enhance the adhesion of the second electrode 318 and the conductive growth substrate 302, and to prevent the second electrode 318 from being peeled off due to poor adhesion.

Referring to FIG. 8, a horizontal LED structure 400 according to a sixth embodiment of the present invention includes a conductive growth substrate 402 having an upper surface 403 defining a first region 4A and a second region 4B. The semiconductor epitaxial layer stack 401 is formed on the first region 4A, wherein the semiconductor epitaxial layer stack 401 includes a reflective layer 404, an n-type semiconductor layer 406, an active layer 408, which are sequentially stacked on the conductive growth substrate 402, P-type semiconductor layer 410. A transparent conductive layer 412 is disposed on the p-type semiconductor layer 410, a first electrode 414 is formed on the transparent conductive layer 412, a recess 426 is formed on the second region 4B of the conductive growth substrate 402, and the second electrode 418 is formed on the conductive growth. The substrate 402 is covered and covers the recess 426. The composition of the semiconductor epitaxial layer stack 401 and the manufacturing steps thereof are as described in the first to fifth embodiments. After the fabrication of the semiconductor epitaxial layer stack 401 is completed, the semiconductor epitaxial layer stack 401 on the second region 4B is etched to expose the conductive growth substrate 402. Then, the exposed second region 4B of the conductive growth substrate is patterned and etched to form a recess 426, and then the second electrode 418 is formed on the second region B, and covers the recess 426 and the exposed portion 420 of the cover portion, and the n-type electrode 418 is directly The conductive growth substrate 402 is in contact with the conductive growth substrate 402 and electrically connected to the semiconductor epitaxial laminate 401. The second electrode 418 may also partially cover the recess 426 and partially cover the exposed portion 420. The function of the recess 426 is to enhance the adhesion of the second electrode 418 and the conductive growth substrate 402, and to prevent the second electrode 418 from being peeled off due to poor adhesion.

The reflective layer 404 of the present embodiment has a third semiconductor layer 404c and a fourth semiconductor layer 404c alternately stacked. In order to shorten the oxidation time, the upper surface of the light emitting diode structure 400 is etched to the conductive growth substrate 402 to form a plurality of holes 440, so that the reflective layer 404 can be oxidized by the holes 440 to form aluminum oxide (Al _x). O _y ) layer 404a. The first electrode 424 is formed on the transparent conductive layer 412, and the second electrode 418 is formed on the conductive growth substrate 402 and covers the recess 426 to complete the LED structure 400. In the present embodiment, the light-emitting diode structure has a plurality of holes 440 therein, and the area of the high-reflectivity reflective layer is increased although the active layer area of the portion is sacrificed. The holes 440 in the embodiment may also be etched from the upper surface of the LED structure 400, but not etched to the conductive growth substrate 402, and only the reflective layer 404 is exposed to form aluminum oxide (Al _x O _y ) by oxidation. Floor.

It should be noted that the above embodiments are not drawn to the scale of the actual article. The examples of the invention are intended to be illustrative only and not to limit the scope of the invention. Any changes or modifications of the present invention to those skilled in the art will be made without departing from the spirit and scope of the invention.

100, 200, 300, 400‧‧‧ horizontal LED structure

101, 201, 301, 401‧‧‧ semiconductor epitaxial stack

102, 202, 302, 402‧‧‧ conductive growth substrate

104, 204, 304, 404‧‧ ‧ reflection layer

106, 206, 306, 406‧‧‧n type semiconductor layer

108, 208, 308, 408‧‧‧ active layer

110, 210, 310, 410‧‧‧p type semiconductor layer

112, 212, 312, 412‧‧ ‧ transparent conductive layer

114, 214, 314, 414‧‧‧ first electrode

116, 216, 316, 416‧‧‧ laminated crystal retention

118, 218, 318, 418‧‧‧ second electrode

1A, 2A, 3A, 4A‧‧‧ first area

1B, 2B, 3B, 4B‧‧‧ second area

240‧‧‧ holes

326, 426‧‧ ‧ recess

104a‧‧‧ Alumina layer

104b‧‧‧fourth semiconductor layer

104c‧‧‧ third semiconductor layer

1A is a top view of a first embodiment of a light-emitting diode element of the present invention; FIG. 1B is a side cross-sectional view showing a first embodiment of the light-emitting diode element of the present invention; and FIG. 1C is a light-emitting diode of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1D is a side cross-sectional view of a first embodiment of a light-emitting diode device according to the present invention with a laminated retention portion; FIGS. 2A-2C are respectively 2 is a side cross-sectional view of a second electrode of a different shape of a first embodiment of the present invention; FIG. 3 is a side cross-sectional view showing a second embodiment of the light emitting diode device of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 5A is a side cross-sectional view showing a third embodiment of a light emitting diode device having a third semiconductor layer and a fourth semiconductor layer alternately stacked; FIG. The present invention is a cross-sectional view of the light-emitting diode component of the present invention after the wet oxygen process; FIG. 6A is a top view of the light-emitting diode structure of the fourth embodiment of the present invention; and FIG. 6B is a light-emitting diode of the fourth embodiment of the present invention. Dipolar structure The A cross-sectional view of the W-W' dotted line.

7A is a side view showing a structure of a light emitting diode according to a fifth embodiment of the present invention; and FIG. 7B is a view showing a second electrode portion of the light emitting diode structure covering the concave portion and partially covering the exposed portion according to the fifth embodiment of the present invention; Fig. 8 is a side cross-sectional view showing the composition of an oxidizable high aluminum content semiconductor layer and a non-oxidizable semiconductor layer stack of the light emitting diode structure of the sixth embodiment of the present invention.

200‧‧‧Horizontal LED structure

201‧‧‧Semiconductor epitaxial stack

202‧‧‧ Conductive growth substrate

204‧‧‧reflective layer

206‧‧‧n type semiconductor layer

208‧‧‧active layer

210‧‧‧p-type semiconductor layer

212‧‧‧Transparent conductive layer

214‧‧‧First electrode

216‧‧‧Crystal Retention Department

218‧‧‧second electrode

2A‧‧‧First area

2B‧‧‧Second area

240‧‧‧ holes

204a‧‧‧Alumina layer

204b‧‧‧fourth semiconductor layer

204c‧‧‧ third semiconductor layer

Claims (10)

An LED component includes: a substrate having a first region and a second region; a laminate disposed on the first region of the substrate and not located on the second region, wherein the laminate The method includes: a reflective layer on the first region; a first semiconductor layer having a first conductive property on the reflective layer; an active layer on the first semiconductor layer; and a second a second semiconductor layer having a conductive property on the active layer; a first electrode on the second semiconductor layer; and a second electrode on the second region electrically connected to the stack, wherein the first An electrode and a second electrode are located on the same side of the substrate, and the stack is not located between the second electrode and the substrate. The luminescent diode component of claim 1, wherein the substrate comprises a conductive substrate. The light-emitting diode element of claim 1, further comprising a recess between the second region and the second electrode, the recess being formed by removing a portion of the substrate. The light-emitting diode element of claim 1, wherein the reflective layer is formed by alternately stacking a plurality of third semiconductor layers and a fourth semiconductor layer. The light-emitting diode element of claim 4, wherein the third semiconductor layer is more susceptible to oxidation than the fourth semiconductor layer. The luminescent diode component of claim 1, wherein the reflective layer is not located on the second region. The luminescent diode component of claim 1, wherein the laminate further comprises a plurality of holes exposing the substrate or a portion of the reflective layer. The light-emitting diode element according to claim 1, further comprising an aluminum oxide layer adjacent to the second region and the third semiconductor layer. The light-emitting diode element according to claim 1, further comprising an aluminum oxide layer surrounding the third semiconductor layer. The light-emitting diode component of claim 7, further comprising an aluminum oxide layer surrounding the holes.