JP6932552B2 - マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法 - Google Patents

マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法 Download PDF

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Publication number
JP6932552B2
JP6932552B2 JP2017107767A JP2017107767A JP6932552B2 JP 6932552 B2 JP6932552 B2 JP 6932552B2 JP 2017107767 A JP2017107767 A JP 2017107767A JP 2017107767 A JP2017107767 A JP 2017107767A JP 6932552 B2 JP6932552 B2 JP 6932552B2
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Japan
Prior art keywords
light
shielding film
mask
film
translucent substrate
Prior art date
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JP2017107767A
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English (en)
Japanese (ja)
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JP2018205400A (ja
JP2018205400A5 (enExample
Inventor
雅広 橋本
雅広 橋本
真理子 内田
真理子 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Electronics Singapore Pte Ltd
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Hoya Electronics Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to JP2017107767A priority Critical patent/JP6932552B2/ja
Application filed by Hoya Electronics Singapore Pte Ltd filed Critical Hoya Electronics Singapore Pte Ltd
Priority to CN201880031374.6A priority patent/CN110651225B/zh
Priority to US16/615,542 priority patent/US20200166833A1/en
Priority to PCT/JP2018/018707 priority patent/WO2018221201A1/ja
Priority to KR1020197030979A priority patent/KR102565111B1/ko
Priority to TW107117658A priority patent/TWI768050B/zh
Publication of JP2018205400A publication Critical patent/JP2018205400A/ja
Publication of JP2018205400A5 publication Critical patent/JP2018205400A5/ja
Application granted granted Critical
Publication of JP6932552B2 publication Critical patent/JP6932552B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2017107767A 2017-05-31 2017-05-31 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法 Active JP6932552B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2017107767A JP6932552B2 (ja) 2017-05-31 2017-05-31 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
US16/615,542 US20200166833A1 (en) 2017-05-31 2018-05-15 Mask blank, method of manufacturing transfer mask, and method for manufacturing semiconductor device
PCT/JP2018/018707 WO2018221201A1 (ja) 2017-05-31 2018-05-15 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
KR1020197030979A KR102565111B1 (ko) 2017-05-31 2018-05-15 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
CN201880031374.6A CN110651225B (zh) 2017-05-31 2018-05-15 光罩基底、转印用光罩的制造方法以及半导体设备的制造方法
TW107117658A TWI768050B (zh) 2017-05-31 2018-05-24 光罩基底、轉印用光罩之製造方法及半導體裝置之製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017107767A JP6932552B2 (ja) 2017-05-31 2017-05-31 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2018205400A JP2018205400A (ja) 2018-12-27
JP2018205400A5 JP2018205400A5 (enExample) 2020-06-11
JP6932552B2 true JP6932552B2 (ja) 2021-09-08

Family

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JP2017107767A Active JP6932552B2 (ja) 2017-05-31 2017-05-31 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法

Country Status (6)

Country Link
US (1) US20200166833A1 (enExample)
JP (1) JP6932552B2 (enExample)
KR (1) KR102565111B1 (enExample)
CN (1) CN110651225B (enExample)
TW (1) TWI768050B (enExample)
WO (1) WO2018221201A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7329033B2 (ja) 2020-12-31 2023-08-17 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
JP7329031B2 (ja) * 2020-12-31 2023-08-17 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
KR102465982B1 (ko) 2021-07-13 2022-11-09 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR20240055741A (ko) 2021-09-08 2024-04-29 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법
KR102503790B1 (ko) * 2021-10-07 2023-02-23 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3115185B2 (ja) * 1993-05-25 2000-12-04 株式会社東芝 露光用マスクとパターン形成方法
JP2878143B2 (ja) * 1994-02-22 1999-04-05 インターナショナル・ビジネス・マシーンズ・コーポレイション 減衰位相シフト・マスク作成用の薄膜材料及びその作成方法
JP3286103B2 (ja) 1995-02-15 2002-05-27 株式会社東芝 露光用マスクの製造方法及び製造装置
JP3247306B2 (ja) * 1995-11-17 2002-01-15 株式会社トプコン フォトマスクのパターンの微小欠陥検査方法及びその装置
JP2002214793A (ja) * 2001-01-22 2002-07-31 Mitsubishi Electric Corp 反射防止膜及び半導体装置の製造方法
JP2004537758A (ja) 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
JP2004109592A (ja) * 2002-09-19 2004-04-08 Renesas Technology Corp フォトマスクおよびその製造方法
JP4494173B2 (ja) * 2004-11-26 2010-06-30 パナソニック株式会社 固体撮像装置の製造方法
JP2009122566A (ja) * 2007-11-19 2009-06-04 Dainippon Printing Co Ltd 低反射型フォトマスクブランクスおよびフォトマスク
JP5208011B2 (ja) 2009-02-13 2013-06-12 セイコーインスツル株式会社 メモリ回路装置
WO2010092899A1 (ja) * 2009-02-13 2010-08-19 Hoya株式会社 フォトマスクブランク及びその製造方法、並びにフォトマスク及びその製造方法
KR101702682B1 (ko) * 2009-04-16 2017-02-06 호야 가부시키가이샤 마스크 블랭크 및 전사용 마스크
JP6005530B2 (ja) 2013-01-15 2016-10-12 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
WO2015072478A1 (ja) * 2013-11-18 2015-05-21 株式会社ニコン 空間光変調素子モジュール、光描画装置、露光装置、空間光変調素子モジュール製造方法およびデバイス製造方法
US9933698B2 (en) * 2014-03-18 2018-04-03 Hoya Corporation Mask blank, phase-shift mask and method for manufacturing semiconductor device
JP6394496B2 (ja) * 2014-07-15 2018-09-26 信越化学工業株式会社 バイナリフォトマスクブランク、その製造方法、及びバイナリフォトマスクの製造方法
CN106200256B (zh) * 2014-08-25 2020-07-10 株式会社 S&S Tech 相位反转空白掩模及光掩模
JP6743679B2 (ja) * 2016-03-02 2020-08-19 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
US11112690B2 (en) * 2016-08-26 2021-09-07 Hoya Corporation Mask blank, transfer mask, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
KR20200014272A (ko) 2020-02-10
JP2018205400A (ja) 2018-12-27
WO2018221201A1 (ja) 2018-12-06
CN110651225A (zh) 2020-01-03
TWI768050B (zh) 2022-06-21
CN110651225B (zh) 2023-10-03
KR102565111B1 (ko) 2023-08-09
US20200166833A1 (en) 2020-05-28
TW201903516A (zh) 2019-01-16

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