KR102565111B1 - 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 - Google Patents

마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 Download PDF

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KR102565111B1
KR102565111B1 KR1020197030979A KR20197030979A KR102565111B1 KR 102565111 B1 KR102565111 B1 KR 102565111B1 KR 1020197030979 A KR1020197030979 A KR 1020197030979A KR 20197030979 A KR20197030979 A KR 20197030979A KR 102565111 B1 KR102565111 B1 KR 102565111B1
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South Korea
Prior art keywords
light
shielding film
bonds
mask
film
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Korean (ko)
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KR20200014272A (ko
Inventor
마사히로 하시모토
마리코 우치다
Original Assignee
호야 가부시키가이샤
호야 일렉트로닉스 싱가포르 프라이빗 리미티드
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
KR1020197030979A 2017-05-31 2018-05-15 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 Active KR102565111B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2017-107767 2017-05-31
JP2017107767A JP6932552B2 (ja) 2017-05-31 2017-05-31 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
PCT/JP2018/018707 WO2018221201A1 (ja) 2017-05-31 2018-05-15 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20200014272A KR20200014272A (ko) 2020-02-10
KR102565111B1 true KR102565111B1 (ko) 2023-08-09

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KR1020197030979A Active KR102565111B1 (ko) 2017-05-31 2018-05-15 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법

Country Status (6)

Country Link
US (1) US20200166833A1 (enExample)
JP (1) JP6932552B2 (enExample)
KR (1) KR102565111B1 (enExample)
CN (1) CN110651225B (enExample)
TW (1) TWI768050B (enExample)
WO (1) WO2018221201A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7329033B2 (ja) 2020-12-31 2023-08-17 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
JP7329031B2 (ja) * 2020-12-31 2023-08-17 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
KR102465982B1 (ko) 2021-07-13 2022-11-09 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR20240055741A (ko) 2021-09-08 2024-04-29 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법
KR102503790B1 (ko) * 2021-10-07 2023-02-23 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004109592A (ja) 2002-09-19 2004-04-08 Renesas Technology Corp フォトマスクおよびその製造方法
JP2009122566A (ja) 2007-11-19 2009-06-04 Dainippon Printing Co Ltd 低反射型フォトマスクブランクスおよびフォトマスク
JP2012003283A (ja) 2009-02-13 2012-01-05 Hoya Corp フォトマスクブランク及びその製造方法、並びにフォトマスク及びその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3115185B2 (ja) * 1993-05-25 2000-12-04 株式会社東芝 露光用マスクとパターン形成方法
JP2878143B2 (ja) * 1994-02-22 1999-04-05 インターナショナル・ビジネス・マシーンズ・コーポレイション 減衰位相シフト・マスク作成用の薄膜材料及びその作成方法
JP3286103B2 (ja) 1995-02-15 2002-05-27 株式会社東芝 露光用マスクの製造方法及び製造装置
JP3247306B2 (ja) * 1995-11-17 2002-01-15 株式会社トプコン フォトマスクのパターンの微小欠陥検査方法及びその装置
JP2002214793A (ja) * 2001-01-22 2002-07-31 Mitsubishi Electric Corp 反射防止膜及び半導体装置の製造方法
JP2004537758A (ja) 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
JP4494173B2 (ja) * 2004-11-26 2010-06-30 パナソニック株式会社 固体撮像装置の製造方法
JP5208011B2 (ja) 2009-02-13 2013-06-12 セイコーインスツル株式会社 メモリ回路装置
KR101702682B1 (ko) * 2009-04-16 2017-02-06 호야 가부시키가이샤 마스크 블랭크 및 전사용 마스크
JP6005530B2 (ja) 2013-01-15 2016-10-12 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
WO2015072478A1 (ja) * 2013-11-18 2015-05-21 株式会社ニコン 空間光変調素子モジュール、光描画装置、露光装置、空間光変調素子モジュール製造方法およびデバイス製造方法
US9933698B2 (en) * 2014-03-18 2018-04-03 Hoya Corporation Mask blank, phase-shift mask and method for manufacturing semiconductor device
JP6394496B2 (ja) * 2014-07-15 2018-09-26 信越化学工業株式会社 バイナリフォトマスクブランク、その製造方法、及びバイナリフォトマスクの製造方法
CN106200256B (zh) * 2014-08-25 2020-07-10 株式会社 S&S Tech 相位反转空白掩模及光掩模
JP6743679B2 (ja) * 2016-03-02 2020-08-19 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
US11112690B2 (en) * 2016-08-26 2021-09-07 Hoya Corporation Mask blank, transfer mask, and method for manufacturing semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004109592A (ja) 2002-09-19 2004-04-08 Renesas Technology Corp フォトマスクおよびその製造方法
JP2009122566A (ja) 2007-11-19 2009-06-04 Dainippon Printing Co Ltd 低反射型フォトマスクブランクスおよびフォトマスク
JP2012003283A (ja) 2009-02-13 2012-01-05 Hoya Corp フォトマスクブランク及びその製造方法、並びにフォトマスク及びその製造方法

Also Published As

Publication number Publication date
KR20200014272A (ko) 2020-02-10
JP2018205400A (ja) 2018-12-27
WO2018221201A1 (ja) 2018-12-06
CN110651225A (zh) 2020-01-03
TWI768050B (zh) 2022-06-21
CN110651225B (zh) 2023-10-03
JP6932552B2 (ja) 2021-09-08
US20200166833A1 (en) 2020-05-28
TW201903516A (zh) 2019-01-16

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