CN110651225B - 光罩基底、转印用光罩的制造方法以及半导体设备的制造方法 - Google Patents

光罩基底、转印用光罩的制造方法以及半导体设备的制造方法 Download PDF

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Publication number
CN110651225B
CN110651225B CN201880031374.6A CN201880031374A CN110651225B CN 110651225 B CN110651225 B CN 110651225B CN 201880031374 A CN201880031374 A CN 201880031374A CN 110651225 B CN110651225 B CN 110651225B
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CN
China
Prior art keywords
light
shielding film
light shielding
mask
film
Prior art date
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Active
Application number
CN201880031374.6A
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English (en)
Chinese (zh)
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CN110651225A (zh
Inventor
桥本雅广
内田真理子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Hoya Electronics Singapore Pte Ltd
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Hoya Corp
Hoya Electronics Singapore Pte Ltd
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Publication of CN110651225A publication Critical patent/CN110651225A/zh
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CN201880031374.6A 2017-05-31 2018-05-15 光罩基底、转印用光罩的制造方法以及半导体设备的制造方法 Active CN110651225B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-107767 2017-05-31
JP2017107767A JP6932552B2 (ja) 2017-05-31 2017-05-31 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
PCT/JP2018/018707 WO2018221201A1 (ja) 2017-05-31 2018-05-15 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
CN110651225A CN110651225A (zh) 2020-01-03
CN110651225B true CN110651225B (zh) 2023-10-03

Family

ID=64455904

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880031374.6A Active CN110651225B (zh) 2017-05-31 2018-05-15 光罩基底、转印用光罩的制造方法以及半导体设备的制造方法

Country Status (6)

Country Link
US (1) US20200166833A1 (enExample)
JP (1) JP6932552B2 (enExample)
KR (1) KR102565111B1 (enExample)
CN (1) CN110651225B (enExample)
TW (1) TWI768050B (enExample)
WO (1) WO2018221201A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7329033B2 (ja) 2020-12-31 2023-08-17 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
JP7329031B2 (ja) * 2020-12-31 2023-08-17 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
KR102465982B1 (ko) 2021-07-13 2022-11-09 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR20240055741A (ko) 2021-09-08 2024-04-29 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법
KR102503790B1 (ko) * 2021-10-07 2023-02-23 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Citations (5)

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US5939225A (en) * 1994-02-22 1999-08-17 International Business Machines Corporation Thin film materials for the preparation of attenuating phase shift masks
JP2006156578A (ja) * 2004-11-26 2006-06-15 Matsushita Electric Ind Co Ltd 固体撮像装置の製造方法
TW201527896A (zh) * 2013-11-18 2015-07-16 尼康股份有限公司 空間光調變元件模組、光描繪裝置、曝光裝置、空間光調變元件模組製造方法及元件製造方法
CN105301890A (zh) * 2014-07-15 2016-02-03 信越化学工业株式会社 二元光掩模坯料、其制备、和二元光掩模的制备
CN106200256A (zh) * 2014-08-25 2016-12-07 株式会社S&Stech 相位反转空白掩模及光掩模

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JP3115185B2 (ja) * 1993-05-25 2000-12-04 株式会社東芝 露光用マスクとパターン形成方法
JP3286103B2 (ja) 1995-02-15 2002-05-27 株式会社東芝 露光用マスクの製造方法及び製造装置
JP3247306B2 (ja) * 1995-11-17 2002-01-15 株式会社トプコン フォトマスクのパターンの微小欠陥検査方法及びその装置
JP2002214793A (ja) * 2001-01-22 2002-07-31 Mitsubishi Electric Corp 反射防止膜及び半導体装置の製造方法
JP2004537758A (ja) 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
JP2004109592A (ja) * 2002-09-19 2004-04-08 Renesas Technology Corp フォトマスクおよびその製造方法
JP2009122566A (ja) * 2007-11-19 2009-06-04 Dainippon Printing Co Ltd 低反射型フォトマスクブランクスおよびフォトマスク
JP5208011B2 (ja) 2009-02-13 2013-06-12 セイコーインスツル株式会社 メモリ回路装置
WO2010092899A1 (ja) * 2009-02-13 2010-08-19 Hoya株式会社 フォトマスクブランク及びその製造方法、並びにフォトマスク及びその製造方法
KR101702682B1 (ko) * 2009-04-16 2017-02-06 호야 가부시키가이샤 마스크 블랭크 및 전사용 마스크
JP6005530B2 (ja) 2013-01-15 2016-10-12 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
US9933698B2 (en) * 2014-03-18 2018-04-03 Hoya Corporation Mask blank, phase-shift mask and method for manufacturing semiconductor device
JP6743679B2 (ja) * 2016-03-02 2020-08-19 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
US11112690B2 (en) * 2016-08-26 2021-09-07 Hoya Corporation Mask blank, transfer mask, and method for manufacturing semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939225A (en) * 1994-02-22 1999-08-17 International Business Machines Corporation Thin film materials for the preparation of attenuating phase shift masks
JP2006156578A (ja) * 2004-11-26 2006-06-15 Matsushita Electric Ind Co Ltd 固体撮像装置の製造方法
TW201527896A (zh) * 2013-11-18 2015-07-16 尼康股份有限公司 空間光調變元件模組、光描繪裝置、曝光裝置、空間光調變元件模組製造方法及元件製造方法
CN105301890A (zh) * 2014-07-15 2016-02-03 信越化学工业株式会社 二元光掩模坯料、其制备、和二元光掩模的制备
CN106200256A (zh) * 2014-08-25 2016-12-07 株式会社S&Stech 相位反转空白掩模及光掩模

Also Published As

Publication number Publication date
KR20200014272A (ko) 2020-02-10
JP2018205400A (ja) 2018-12-27
WO2018221201A1 (ja) 2018-12-06
CN110651225A (zh) 2020-01-03
TWI768050B (zh) 2022-06-21
JP6932552B2 (ja) 2021-09-08
KR102565111B1 (ko) 2023-08-09
US20200166833A1 (en) 2020-05-28
TW201903516A (zh) 2019-01-16

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