JP6930858B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6930858B2
JP6930858B2 JP2017102542A JP2017102542A JP6930858B2 JP 6930858 B2 JP6930858 B2 JP 6930858B2 JP 2017102542 A JP2017102542 A JP 2017102542A JP 2017102542 A JP2017102542 A JP 2017102542A JP 6930858 B2 JP6930858 B2 JP 6930858B2
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JP
Japan
Prior art keywords
gate
electrode
semiconductor layer
gate wiring
trench
Prior art date
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Active
Application number
JP2017102542A
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English (en)
Japanese (ja)
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JP2018198266A5 (enExample
JP2018198266A (ja
Inventor
常雄 小倉
常雄 小倉
知子 末代
知子 末代
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2017102542A priority Critical patent/JP6930858B2/ja
Priority to US15/837,453 priority patent/US10553710B2/en
Publication of JP2018198266A publication Critical patent/JP2018198266A/ja
Publication of JP2018198266A5 publication Critical patent/JP2018198266A5/ja
Application granted granted Critical
Publication of JP6930858B2 publication Critical patent/JP6930858B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2017102542A 2017-05-24 2017-05-24 半導体装置 Active JP6930858B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017102542A JP6930858B2 (ja) 2017-05-24 2017-05-24 半導体装置
US15/837,453 US10553710B2 (en) 2017-05-24 2017-12-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017102542A JP6930858B2 (ja) 2017-05-24 2017-05-24 半導体装置

Publications (3)

Publication Number Publication Date
JP2018198266A JP2018198266A (ja) 2018-12-13
JP2018198266A5 JP2018198266A5 (enExample) 2019-09-19
JP6930858B2 true JP6930858B2 (ja) 2021-09-01

Family

ID=64401830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017102542A Active JP6930858B2 (ja) 2017-05-24 2017-05-24 半導体装置

Country Status (2)

Country Link
US (1) US10553710B2 (enExample)
JP (1) JP6930858B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105226090B (zh) * 2015-11-10 2018-07-13 株洲中车时代电气股份有限公司 一种绝缘栅双极晶体管及其制作方法
JP7185875B2 (ja) * 2019-02-27 2022-12-08 株式会社デンソー スイッチング素子
JP7224979B2 (ja) * 2019-03-15 2023-02-20 株式会社東芝 半導体装置
CN110473918A (zh) * 2019-08-30 2019-11-19 丽晶美能（北京）电子技术有限公司 沟槽式栅极结构igbt

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3410286B2 (ja) * 1996-04-01 2003-05-26 三菱電機株式会社 絶縁ゲート型半導体装置
JP2000101076A (ja) * 1998-09-25 2000-04-07 Toshiba Corp 絶縁ゲート型半導体素子とその駆動方法
JP4608133B2 (ja) 2001-06-08 2011-01-05 ルネサスエレクトロニクス株式会社 縦型ｍｏｓｆｅｔを備えた半導体装置およびその製造方法
JP4854868B2 (ja) 2001-06-14 2012-01-18 ローム株式会社 半導体装置
JP3906052B2 (ja) * 2001-10-15 2007-04-18 株式会社東芝 絶縁ゲート型半導体装置
US7449354B2 (en) * 2006-01-05 2008-11-11 Fairchild Semiconductor Corporation Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch
JP5122762B2 (ja) 2006-03-07 2013-01-16 株式会社東芝 電力用半導体素子、その製造方法及びその駆動方法
JP2009038318A (ja) * 2007-08-03 2009-02-19 Toshiba Corp 半導体装置
JP2009146994A (ja) * 2007-12-12 2009-07-02 Toyota Industries Corp トレンチゲート型半導体装置
CN103855223B (zh) * 2009-03-25 2016-09-28 罗姆股份有限公司 半导体装置
WO2011074124A1 (ja) * 2009-12-18 2011-06-23 富士電機ホールディングス株式会社 半導体装置
JP2011228719A (ja) * 2011-05-23 2011-11-10 Renesas Electronics Corp Ｄｃ／ｄｃコンバータ用半導体装置
JP2013197122A (ja) * 2012-03-15 2013-09-30 Toshiba Corp 半導体装置
KR20150140270A (ko) * 2013-04-11 2015-12-15 후지 덴키 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법
JP6320808B2 (ja) * 2014-03-19 2018-05-09 富士電機株式会社 トレンチｍｏｓ型半導体装置
JP2015204374A (ja) * 2014-04-14 2015-11-16 株式会社ジェイテクト 半導体装置
JP2016040807A (ja) * 2014-08-13 2016-03-24 株式会社東芝 半導体装置
JP6320545B2 (ja) * 2014-09-26 2018-05-09 三菱電機株式会社 半導体装置
JP6588363B2 (ja) * 2016-03-09 2019-10-09 トヨタ自動車株式会社 スイッチング素子

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Publication number Publication date
JP2018198266A (ja) 2018-12-13
US20180342604A1 (en) 2018-11-29
US10553710B2 (en) 2020-02-04

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