JP6914335B2 - プラズマ処理装置用部材 - Google Patents
プラズマ処理装置用部材 Download PDFInfo
- Publication number
- JP6914335B2 JP6914335B2 JP2019532887A JP2019532887A JP6914335B2 JP 6914335 B2 JP6914335 B2 JP 6914335B2 JP 2019532887 A JP2019532887 A JP 2019532887A JP 2019532887 A JP2019532887 A JP 2019532887A JP 6914335 B2 JP6914335 B2 JP 6914335B2
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- Prior art keywords
- plasma processing
- peripheral surface
- inner peripheral
- processing apparatus
- crystal particles
- Prior art date
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- 230000002093 peripheral effect Effects 0.000 claims description 43
- 239000002245 particle Substances 0.000 claims description 40
- 239000013078 crystal Substances 0.000 claims description 26
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 18
- 239000000919 ceramic Substances 0.000 claims description 13
- 239000000843 powder Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 21
- 238000005259 measurement Methods 0.000 description 18
- 238000010304 firing Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 12
- 238000005260 corrosion Methods 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910000019 calcium carbonate Inorganic materials 0.000 description 6
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 6
- 239000000347 magnesium hydroxide Substances 0.000 description 6
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- -1 magnesium aluminate Chemical class 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000008187 granular material Substances 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
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- 238000001878 scanning electron micrograph Methods 0.000 description 2
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- 101100433727 Caenorhabditis elegans got-1.2 gene Proteins 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
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- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L9/00—Rigid pipes
- F16L9/10—Rigid pipes of glass or ceramics, e.g. clay, clay tile, porcelain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Composite Materials (AREA)
- General Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
2 :環状部材
3 :プラズマ処理装置用部材
3a:貫通孔
3b:外周面
3c:内周面
3d:結晶粒子
4 :フランジ部
5 :Oリング
Claims (3)
- 内部空間に被処理部材を配置するチャンバー内にプラズマ生成用ガスを供給するための貫通孔を軸方向に備えたセラミックスからなる筒状体のプラズマ処理装置用部材であって、
前記セラミックスは、酸化アルミニウムを主成分とし、複数の結晶粒子と、該結晶粒子間に存在する粒界相とを有し、
前記筒状体の内周面は、焼き肌面であるとともに、算術平均粗さRaが1μm以上3μm以下であり、最大高さRmaxが30μm以上130μm以下である、プラズマ処理装置用部材。 - 前記筒状体の内周面は、クルトシスRkuの平均値が6.0以上である、請求項1に記載のプラズマ処理装置用部材。
- 前記筒状体の内周面は、酸化アルミニウムの結晶粒子からなる凸部を有しており、該凸部の表面は複数の平面からなる、請求項1または2に記載のプラズマ処理装置用部材。
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JP2017146772 | 2017-07-28 | ||
JP2017146772 | 2017-07-28 | ||
PCT/JP2018/028321 WO2019022244A1 (ja) | 2017-07-28 | 2018-07-27 | プラズマ処理装置用部材 |
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JPWO2019022244A1 JPWO2019022244A1 (ja) | 2020-07-16 |
JP6914335B2 true JP6914335B2 (ja) | 2021-08-04 |
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US (1) | US11527388B2 (ja) |
JP (1) | JP6914335B2 (ja) |
KR (1) | KR102341011B1 (ja) |
CN (1) | CN110944962B (ja) |
WO (1) | WO2019022244A1 (ja) |
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JP7329610B2 (ja) * | 2019-09-27 | 2023-08-18 | 京セラ株式会社 | プラズマ処理装置用部材、その製造方法およびプラズマ処理装置 |
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Family Cites Families (15)
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JPH10167859A (ja) * | 1996-12-05 | 1998-06-23 | Ngk Insulators Ltd | セラミックス部品およびその製造方法 |
JPH11209182A (ja) * | 1998-01-22 | 1999-08-03 | Sumitomo Metal Ind Ltd | プラズマ耐食部材 |
JP4213790B2 (ja) * | 1998-08-26 | 2009-01-21 | コバレントマテリアル株式会社 | 耐プラズマ部材およびそれを用いたプラズマ処理装置 |
JP2001250814A (ja) * | 2000-03-06 | 2001-09-14 | Hitachi Ltd | プラズマ処理装置 |
KR100712715B1 (ko) * | 2001-01-31 | 2007-05-04 | 도시바세라믹스가부시키가이샤 | 표면에 미세한 돌기를 형성시킨 세라믹스부재 및 그제조방법 |
JPWO2002083597A1 (ja) * | 2001-04-12 | 2004-08-05 | イビデン株式会社 | セラミック接合体およびその製造方法、半導体ウエハ用セラミック構造体 |
JP4683783B2 (ja) * | 2001-08-02 | 2011-05-18 | コバレントマテリアル株式会社 | 半導体製造装置用耐プラズマ部材の製造方法 |
US7319080B2 (en) * | 2002-09-20 | 2008-01-15 | Tokuyama Corporation | Aluminum nitride sintered compact |
JP4126461B2 (ja) * | 2004-10-18 | 2008-07-30 | 京セラ株式会社 | プラズマプロセス装置用部材 |
CN100522870C (zh) * | 2005-01-27 | 2009-08-05 | 京瓷株式会社 | 复合陶瓷及其制法 |
JP4571561B2 (ja) * | 2005-09-08 | 2010-10-27 | トーカロ株式会社 | 耐プラズマエロージョン性に優れる溶射皮膜被覆部材およびその製造方法 |
JP5004573B2 (ja) | 2006-12-25 | 2012-08-22 | 京セラ株式会社 | 半導体製造装置用耐食性部材およびその製造方法 |
WO2010015414A1 (de) * | 2008-08-07 | 2010-02-11 | Deru Gmbh | Verfahren zum herstellen eines keramikbauteils |
JP6462449B2 (ja) * | 2015-03-26 | 2019-01-30 | 京セラ株式会社 | 高周波用窓部材および半導体製造装置用部材ならびにフラットパネルディスプレイ(fpd)製造装置用部材 |
JP6473830B2 (ja) * | 2015-10-30 | 2019-02-20 | 京セラ株式会社 | シャワープレート、半導体製造装置およびシャワープレートの製造方法 |
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- 2018-07-27 JP JP2019532887A patent/JP6914335B2/ja active Active
- 2018-07-27 CN CN201880047916.9A patent/CN110944962B/zh active Active
- 2018-07-27 US US16/633,351 patent/US11527388B2/en active Active
- 2018-07-27 KR KR1020207000799A patent/KR102341011B1/ko active IP Right Grant
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KR102341011B1 (ko) | 2021-12-20 |
US11527388B2 (en) | 2022-12-13 |
JPWO2019022244A1 (ja) | 2020-07-16 |
KR20200018608A (ko) | 2020-02-19 |
CN110944962A (zh) | 2020-03-31 |
CN110944962B (zh) | 2022-05-31 |
US20200152422A1 (en) | 2020-05-14 |
WO2019022244A1 (ja) | 2019-01-31 |
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