JP6886866B2 - 減圧乾燥装置 - Google Patents
減圧乾燥装置 Download PDFInfo
- Publication number
- JP6886866B2 JP6886866B2 JP2017107517A JP2017107517A JP6886866B2 JP 6886866 B2 JP6886866 B2 JP 6886866B2 JP 2017107517 A JP2017107517 A JP 2017107517A JP 2017107517 A JP2017107517 A JP 2017107517A JP 6886866 B2 JP6886866 B2 JP 6886866B2
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- 238000001291 vacuum drying Methods 0.000 title claims description 65
- 239000002904 solvent Substances 0.000 claims description 161
- 239000000758 substrate Substances 0.000 claims description 86
- 238000001035 drying Methods 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 25
- 239000011368 organic material Substances 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000009834 vaporization Methods 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 2
- 238000009835 boiling Methods 0.000 description 21
- 239000007789 gas Substances 0.000 description 20
- 230000008018 melting Effects 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000006837 decompression Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- UOHMMEJUHBCKEE-UHFFFAOYSA-N prehnitene Chemical compound CC1=CC=C(C)C(C)=C1C UOHMMEJUHBCKEE-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- CRUILBNAQILVHZ-UHFFFAOYSA-N 1,2,3-trimethoxybenzene Chemical compound COC1=CC=CC(OC)=C1OC CRUILBNAQILVHZ-UHFFFAOYSA-N 0.000 description 2
- MCUPBIBNSTXCPQ-UHFFFAOYSA-N 1-tert-butyl-4-methoxybenzene Chemical compound COC1=CC=C(C(C)(C)C)C=C1 MCUPBIBNSTXCPQ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- QUOSGKWSUBMOQU-UHFFFAOYSA-N 1,2-dimethoxybenzene Chemical compound COC1=CC=CC=C1OC.COC1=CC=CC=C1OC QUOSGKWSUBMOQU-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- FPEUDBGJAVKAEE-UHFFFAOYSA-N 1,3-dimethoxy-2-methylbenzene Chemical compound COC1=CC=CC(OC)=C1C FPEUDBGJAVKAEE-UHFFFAOYSA-N 0.000 description 1
- NLWCWEGVNJVLAX-UHFFFAOYSA-N 1-methoxy-2-phenylbenzene Chemical group COC1=CC=CC=C1C1=CC=CC=C1 NLWCWEGVNJVLAX-UHFFFAOYSA-N 0.000 description 1
- -1 2-ethoxynaphthalene (2-ethoxynaphthalene) Ethoxynaphthalene Chemical compound 0.000 description 1
- UEXFDEKTELCPNF-UHFFFAOYSA-N 2-propoxynaphthalene Chemical compound C1=CC=CC2=CC(OCCC)=CC=C21 UEXFDEKTELCPNF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- HHNHBFLGXIUXCM-GFCCVEGCSA-N cyclohexylbenzene Chemical compound [CH]1CCCC[C@@H]1C1=CC=CC=C1 HHNHBFLGXIUXCM-GFCCVEGCSA-N 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- KWKXNDCHNDYVRT-UHFFFAOYSA-N dodecylbenzene Chemical compound CCCCCCCCCCCCC1=CC=CC=C1 KWKXNDCHNDYVRT-UHFFFAOYSA-N 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BOTNYLSAWDQNEX-UHFFFAOYSA-N phenoxymethylbenzene Chemical compound C=1C=CC=CC=1COC1=CC=CC=C1 BOTNYLSAWDQNEX-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- RUVINXPYWBROJD-ONEGZZNKSA-N trans-anethole Chemical compound COC1=CC=C(\C=C\C)C=C1 RUVINXPYWBROJD-ONEGZZNKSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Solid Materials (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017107517A JP6886866B2 (ja) | 2017-05-31 | 2017-05-31 | 減圧乾燥装置 |
TW107116715A TWI766997B (zh) | 2017-05-31 | 2018-05-17 | 減壓乾燥裝置及減壓乾燥方法 |
KR1020180056369A KR102474469B1 (ko) | 2017-05-31 | 2018-05-17 | 감압 건조 장치 |
CN201810552163.9A CN108987310A (zh) | 2017-05-31 | 2018-05-31 | 减压干燥装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017107517A JP6886866B2 (ja) | 2017-05-31 | 2017-05-31 | 減圧乾燥装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018204810A JP2018204810A (ja) | 2018-12-27 |
JP6886866B2 true JP6886866B2 (ja) | 2021-06-16 |
Family
ID=64540249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017107517A Active JP6886866B2 (ja) | 2017-05-31 | 2017-05-31 | 減圧乾燥装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6886866B2 (zh) |
KR (1) | KR102474469B1 (zh) |
CN (1) | CN108987310A (zh) |
TW (1) | TWI766997B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6920131B2 (ja) * | 2017-08-10 | 2021-08-18 | 東京エレクトロン株式会社 | 減圧乾燥装置 |
KR102206766B1 (ko) * | 2019-02-18 | 2021-01-25 | 엘지전자 주식회사 | 감압 건조 장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4022186B2 (ja) | 2003-09-04 | 2007-12-12 | 東京エレクトロン株式会社 | 減圧乾燥装置、減圧乾燥方法及び捕集装置 |
JP5089288B2 (ja) * | 2007-01-26 | 2012-12-05 | 大日本スクリーン製造株式会社 | 減圧乾燥装置 |
TWI385266B (zh) * | 2010-05-25 | 2013-02-11 | Univ Shu Te | Atomization coating device |
JP6114636B2 (ja) * | 2013-06-06 | 2017-04-12 | 東京エレクトロン株式会社 | 乾燥装置及び乾燥処理方法 |
JP6189161B2 (ja) * | 2013-09-27 | 2017-08-30 | 東京エレクトロン株式会社 | 乾燥装置、乾燥処理方法、基板ホルダ及び溶媒吸着シート |
JP6429189B2 (ja) * | 2014-11-27 | 2018-11-28 | エリーパワー株式会社 | 真空乾燥装置、真空乾燥方法、および電池電極の製造方法 |
JP6639175B2 (ja) * | 2015-09-29 | 2020-02-05 | 東京エレクトロン株式会社 | 乾燥装置及び乾燥処理方法 |
-
2017
- 2017-05-31 JP JP2017107517A patent/JP6886866B2/ja active Active
-
2018
- 2018-05-17 TW TW107116715A patent/TWI766997B/zh active
- 2018-05-17 KR KR1020180056369A patent/KR102474469B1/ko active IP Right Grant
- 2018-05-31 CN CN201810552163.9A patent/CN108987310A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
TW201907132A (zh) | 2019-02-16 |
JP2018204810A (ja) | 2018-12-27 |
CN108987310A (zh) | 2018-12-11 |
TWI766997B (zh) | 2022-06-11 |
KR102474469B1 (ko) | 2022-12-05 |
KR20180131400A (ko) | 2018-12-10 |
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