JP6856388B2 - ケイ素含有膜の高温原子層堆積 - Google Patents

ケイ素含有膜の高温原子層堆積 Download PDF

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JP6856388B2
JP6856388B2 JP2017008324A JP2017008324A JP6856388B2 JP 6856388 B2 JP6856388 B2 JP 6856388B2 JP 2017008324 A JP2017008324 A JP 2017008324A JP 2017008324 A JP2017008324 A JP 2017008324A JP 6856388 B2 JP6856388 B2 JP 6856388B2
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oxygen
reactor
composition containing
plasma
source
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JP2017130665A (ja
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メイリヤン ワン
メイリヤン ワン
レイ シンジエン
レイ シンジエン
マリカージュナン アヌパマ
マリカージュナン アヌパマ
チャンドラ ハリピン
チャンドラ ハリピン
ビン ハン
ビン ハン
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バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Spectroscopy & Molecular Physics (AREA)
JP2017008324A 2016-01-20 2017-01-20 ケイ素含有膜の高温原子層堆積 Active JP6856388B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662280886P 2016-01-20 2016-01-20
US62/280,886 2016-01-20
US15/404,376 2017-01-12
US15/404,376 US10283348B2 (en) 2016-01-20 2017-01-12 High temperature atomic layer deposition of silicon-containing films

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JP6856388B2 true JP6856388B2 (ja) 2021-04-07

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US (1) US10283348B2 (https=)
EP (1) EP3196336A1 (https=)
JP (2) JP6856388B2 (https=)
KR (1) KR102013412B1 (https=)
CN (2) CN106992114B (https=)
SG (1) SG10201700452RA (https=)
TW (2) TW202018116A (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4092154A1 (en) * 2015-06-16 2022-11-23 Versum Materials US, LLC Processes for depositing silicon-containing films using same
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
US11591692B2 (en) * 2017-02-08 2023-02-28 Versum Materials Us, Llc Organoamino-polysiloxanes for deposition of silicon-containing films
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
US10504901B2 (en) 2017-04-26 2019-12-10 Asm Ip Holding B.V. Substrate processing method and device manufactured using the same
KR102627238B1 (ko) 2017-05-05 2024-01-19 에이에스엠 아이피 홀딩 비.브이. 산소 함유 박막의 형성을 제어하기 위한 플라즈마 강화 증착 공정
US10950454B2 (en) * 2017-08-04 2021-03-16 Lam Research Corporation Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method
KR20190065962A (ko) 2017-12-04 2019-06-12 에이에스엠 아이피 홀딩 비.브이. 유전체와 금속 표면 상에 SiOC의 균일한 증착
WO2019118019A1 (en) * 2017-12-12 2019-06-20 Dow Silicones Corporation Method of depositing a silicon-containing film on a substrate using organo(halo) siloxane precursors
US10431695B2 (en) 2017-12-20 2019-10-01 Micron Technology, Inc. Transistors comprising at lease one of GaP, GaN, and GaAs
US10825816B2 (en) 2017-12-28 2020-11-03 Micron Technology, Inc. Recessed access devices and DRAM constructions
US10319586B1 (en) * 2018-01-02 2019-06-11 Micron Technology, Inc. Methods comprising an atomic layer deposition sequence
US10734527B2 (en) 2018-02-06 2020-08-04 Micron Technology, Inc. Transistors comprising a pair of source/drain regions having a channel there-between
US11521849B2 (en) * 2018-07-20 2022-12-06 Applied Materials, Inc. In-situ deposition process
US20200040454A1 (en) * 2018-08-06 2020-02-06 Lam Research Corporation Method to increase deposition rate of ald process
US10985010B2 (en) * 2018-08-29 2021-04-20 Versum Materials Us, Llc Methods for making silicon and nitrogen containing films
JP7256263B2 (ja) * 2018-10-05 2023-04-11 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ケイ素含有膜の高温原子層堆積
US20200131628A1 (en) * 2018-10-24 2020-04-30 Entegris, Inc. Method for forming molybdenum films on a substrate
KR102157137B1 (ko) * 2018-11-30 2020-09-17 주식회사 한솔케미칼 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법
EP3900022A4 (en) 2018-12-21 2022-09-14 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude PRECURSORS AND PROCESSES FOR DEPOSITION OF SI CONTAINING COATINGS USING ALD AT A TEMPERATURE OF 550°C OR HIGHER
WO2021025874A1 (en) 2019-08-06 2021-02-11 Lam Research Corporation Thermal atomic layer deposition of silicon-containing films
TWI834919B (zh) * 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
KR102789199B1 (ko) * 2019-12-19 2025-04-01 주식회사 원익아이피에스 박막증착방법
JP7227122B2 (ja) 2019-12-27 2023-02-21 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
US12341005B2 (en) 2020-01-17 2025-06-24 Asm Ip Holding B.V. Formation of SiCN thin films
US12142479B2 (en) 2020-01-17 2024-11-12 Asm Ip Holding B.V. Formation of SiOCN thin films
JP7386732B2 (ja) * 2020-03-06 2023-11-27 東京エレクトロン株式会社 成膜方法
JP7254044B2 (ja) * 2020-03-25 2023-04-07 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
KR102364476B1 (ko) * 2020-05-08 2022-02-18 주식회사 한솔케미칼 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법
CN116057667A (zh) * 2020-06-03 2023-05-02 朗姆研究公司 特征内的湿式蚀刻速率比减小
TWI797640B (zh) 2020-06-18 2023-04-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 基於矽之自組裝單層組成物及使用該組成物之表面製備
CN115803474A (zh) 2020-07-23 2023-03-14 朗姆研究公司 具有受控膜性质和高沉积速率的保形热cvd
KR20230043795A (ko) 2020-07-28 2023-03-31 램 리써치 코포레이션 실리콘-함유 막들의 불순물 감소
KR20230152731A (ko) * 2021-03-02 2023-11-03 버슘머트리얼즈 유에스, 엘엘씨 실리콘 유전체 필름의 선택적 증착
WO2023283144A1 (en) 2021-07-09 2023-01-12 Lam Research Corporation Plasma enhanced atomic layer deposition of silicon-containing films
US12382633B2 (en) 2022-04-26 2025-08-05 Micron Technology, Inc. Microelectronic devices including a selectively removable cap dielectric material, methods of forming the microelectronic devices, and related systems

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3642851A (en) 1968-12-27 1972-02-15 Union Carbide Corp Preparation of linear halosiloxanes and compounds derived therefrom
JP3229419B2 (ja) * 1993-02-10 2001-11-19 ダウ・コ−ニング・コ−ポレ−ション 酸化ケイ素膜の形成方法
JPH08165294A (ja) 1994-12-15 1996-06-25 Shin Etsu Chem Co Ltd １，３−ジクロロ−１，１，３，３−テトラメチルジシロキサンの製造方法
US5989998A (en) * 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film
US6013740A (en) 1998-08-27 2000-01-11 Dow Corning Corporation Sheet and tube polymers with pendant siloxane groups
KR100505668B1 (ko) 2002-07-08 2005-08-03 삼성전자주식회사 원자층 증착 방법에 의한 실리콘 산화막 형성 방법
TWI262960B (en) * 2003-02-27 2006-10-01 Samsung Electronics Co Ltd Method for forming silicon dioxide film using siloxane
US7084076B2 (en) * 2003-02-27 2006-08-01 Samsung Electronics, Co., Ltd. Method for forming silicon dioxide film using siloxane
US7022864B2 (en) * 2003-07-15 2006-04-04 Advanced Technology Materials, Inc. Ethyleneoxide-silane and bridged silane precursors for forming low k films
JP2006060066A (ja) * 2004-08-20 2006-03-02 Mitsubishi Electric Corp シリコン酸化膜の成膜方法および成膜装置
KR20060019868A (ko) * 2004-08-30 2006-03-06 삼성코닝 주식회사 이중 유기 실록산 전구체를 이용한 절연막의 제조방법
JP5019742B2 (ja) * 2005-01-31 2012-09-05 東ソー株式会社 環状シロキサン化合物、Ｓｉ含有膜形成材料、およびその用途
JP4341560B2 (ja) * 2005-01-31 2009-10-07 東ソー株式会社 Ｓｉ含有膜形成材料、Ｓｉ含有膜、Ｓｉ含有膜の製法、及び、半導体デバイス
WO2006088015A1 (ja) * 2005-02-18 2006-08-24 Nec Corporation 有機シリコン系膜の形成方法、当該有機シリコン系膜を有する半導体装置及びその製造方法
KR100660890B1 (ko) 2005-11-16 2006-12-26 삼성전자주식회사 Ａｌｄ를 이용한 이산화실리콘막 형성 방법
US7498273B2 (en) 2006-05-30 2009-03-03 Applied Materials, Inc. Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes
US8129555B2 (en) * 2008-08-12 2012-03-06 Air Products And Chemicals, Inc. Precursors for depositing silicon-containing films and methods for making and using same
US7935643B2 (en) * 2009-08-06 2011-05-03 Applied Materials, Inc. Stress management for tensile films
US9590249B2 (en) * 2010-01-15 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Electricity storage device
US8592294B2 (en) * 2010-02-22 2013-11-26 Asm International N.V. High temperature atomic layer deposition of dielectric oxides
US9460912B2 (en) * 2012-04-12 2016-10-04 Air Products And Chemicals, Inc. High temperature atomic layer deposition of silicon oxide thin films
JP6415808B2 (ja) * 2012-12-13 2018-10-31 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
US9796739B2 (en) * 2013-06-26 2017-10-24 Versum Materials Us, Llc AZA-polysilane precursors and methods for depositing films comprising same
US20150275355A1 (en) 2014-03-26 2015-10-01 Air Products And Chemicals, Inc. Compositions and methods for the deposition of silicon oxide films
JP6545093B2 (ja) 2015-12-14 2019-07-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム

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