JP6854278B2 - ウェハエッジ検査及びレビュー方法及びシステム - Google Patents

ウェハエッジ検査及びレビュー方法及びシステム Download PDF

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JP6854278B2
JP6854278B2 JP2018506963A JP2018506963A JP6854278B2 JP 6854278 B2 JP6854278 B2 JP 6854278B2 JP 2018506963 A JP2018506963 A JP 2018506963A JP 2018506963 A JP2018506963 A JP 2018506963A JP 6854278 B2 JP6854278 B2 JP 6854278B2
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guard ring
ring device
sample
electro
fringe
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JP2018526778A (ja
JP2018526778A5 (enExample
Inventor
シンロン ジアン
シンロン ジアン
クリストファー シアーズ
クリストファー シアーズ
ハーシュ シンハ
ハーシュ シンハ
デイヴィッド トリース
デイヴィッド トリース
ウェイ イエ
ウェイ イエ
デイヴィッド カズ
デイヴィッド カズ
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KLA Corp
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KLA Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1532—Astigmatism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1536—Image distortions due to scanning

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2018506963A 2015-08-10 2016-08-10 ウェハエッジ検査及びレビュー方法及びシステム Active JP6854278B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562203276P 2015-08-10 2015-08-10
US62/203,276 2015-08-10
US15/231,728 US10056224B2 (en) 2015-08-10 2016-08-08 Method and system for edge-of-wafer inspection and review
US15/231,728 2016-08-08
PCT/US2016/046287 WO2017027558A1 (en) 2015-08-10 2016-08-10 Method and system for edge-of-wafer inspection and review

Publications (3)

Publication Number Publication Date
JP2018526778A JP2018526778A (ja) 2018-09-13
JP2018526778A5 JP2018526778A5 (enExample) 2019-09-26
JP6854278B2 true JP6854278B2 (ja) 2021-04-07

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US (2) US10056224B2 (enExample)
JP (1) JP6854278B2 (enExample)
KR (1) KR102315789B1 (enExample)
CN (2) CN111785602B (enExample)
IL (2) IL256858B (enExample)
SG (1) SG10201913242YA (enExample)
TW (2) TWI735458B (enExample)
WO (1) WO2017027558A1 (enExample)

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JP7344047B2 (ja) * 2019-08-22 2023-09-13 株式会社ジェーイーエル 基板の位置合わせ方法
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TWI872403B (zh) * 2022-12-05 2025-02-11 易發精機股份有限公司 用於晶圓的自動光學檢測系統及其影像處理方法
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Also Published As

Publication number Publication date
CN108419448B (zh) 2020-08-04
TWI754599B (zh) 2022-02-01
SG10201913242YA (en) 2020-03-30
US10056224B2 (en) 2018-08-21
US10770258B2 (en) 2020-09-08
TW201715225A (zh) 2017-05-01
JP2018526778A (ja) 2018-09-13
TWI735458B (zh) 2021-08-11
WO2017027558A1 (en) 2017-02-16
IL285052B (en) 2022-03-01
CN111785602A (zh) 2020-10-16
CN108419448A (zh) 2018-08-17
KR20180030236A (ko) 2018-03-21
US20170047193A1 (en) 2017-02-16
KR102315789B1 (ko) 2021-10-20
US20190006143A1 (en) 2019-01-03
IL285052A (en) 2021-08-31
CN111785602B (zh) 2021-09-03
IL256858A (en) 2018-03-29
TW202138799A (zh) 2021-10-16
IL256858B (en) 2021-09-30

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