CN111785602B - 用于晶片边缘检验及复检的方法及系统 - Google Patents

用于晶片边缘检验及复检的方法及系统 Download PDF

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Publication number
CN111785602B
CN111785602B CN202010668841.5A CN202010668841A CN111785602B CN 111785602 B CN111785602 B CN 111785602B CN 202010668841 A CN202010668841 A CN 202010668841A CN 111785602 B CN111785602 B CN 111785602B
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electron
sample
optical
processors
electron beam
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CN111785602A (zh
Inventor
姜辛容
C·西尔斯
H·辛哈
D·特雷斯
叶伟
D·卡兹
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KLA Corp
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KLA Tencor Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1532—Astigmatism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1536—Image distortions due to scanning

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN202010668841.5A 2015-08-10 2016-08-10 用于晶片边缘检验及复检的方法及系统 Active CN111785602B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562203276P 2015-08-10 2015-08-10
US62/203,276 2015-08-10
US15/231,728 US10056224B2 (en) 2015-08-10 2016-08-08 Method and system for edge-of-wafer inspection and review
US15/231,728 2016-08-08
CN201680045818.2A CN108419448B (zh) 2015-08-10 2016-08-10 用于晶片边缘检验及复检的方法及系统

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CN111785602A CN111785602A (zh) 2020-10-16
CN111785602B true CN111785602B (zh) 2021-09-03

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US (2) US10056224B2 (enExample)
JP (1) JP6854278B2 (enExample)
KR (1) KR102315789B1 (enExample)
CN (2) CN111785602B (enExample)
IL (2) IL256858B (enExample)
SG (1) SG10201913242YA (enExample)
TW (2) TWI735458B (enExample)
WO (1) WO2017027558A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10056224B2 (en) * 2015-08-10 2018-08-21 Kla-Tencor Corporation Method and system for edge-of-wafer inspection and review
CN106769162B (zh) * 2017-02-20 2023-06-06 广西大学 一种透射电镜磁性样品预处理器
JP6979107B2 (ja) * 2017-02-24 2021-12-08 株式会社日立ハイテク 荷電粒子線装置
JP6740448B2 (ja) 2017-02-24 2020-08-12 株式会社日立ハイテク 荷電粒子線装置
US11174515B2 (en) 2017-03-15 2021-11-16 The Broad Institute, Inc. CRISPR effector system based diagnostics
US20200071773A1 (en) 2017-04-12 2020-03-05 Massachusetts Eye And Ear Infirmary Tumor signature for metastasis, compositions of matter methods of use thereof
KR102449594B1 (ko) 2017-09-04 2022-10-04 에이에스엠엘 네델란즈 비.브이. 전자 빔 검사 장치 스테이지 위치설정
US20200255828A1 (en) 2017-10-04 2020-08-13 The Broad Institute, Inc. Methods and compositions for altering function and structure of chromatin loops and/or domains
WO2019094955A1 (en) 2017-11-13 2019-05-16 The Broad Institute, Inc. Methods and compositions for targeting developmental and oncogenic programs in h3k27m gliomas
US12402610B2 (en) 2018-11-09 2025-09-02 The Broad Institute, Inc. Methods and compositions for modulating innate lymphoid cell pathogenic effectors
US11739156B2 (en) 2019-01-06 2023-08-29 The Broad Institute, Inc. Massachusetts Institute of Technology Methods and compositions for overcoming immunosuppression
US11600497B2 (en) 2019-04-06 2023-03-07 Kla Corporation Using absolute Z-height values for synergy between tools
JP7232935B2 (ja) 2019-04-10 2023-03-03 エーエスエムエル ネザーランズ ビー．ブイ． 粒子ビーム装置に適したステージ装置
JP7344047B2 (ja) * 2019-08-22 2023-09-13 株式会社ジェーイーエル 基板の位置合わせ方法
JP2021077492A (ja) * 2019-11-07 2021-05-20 株式会社ニューフレアテクノロジー 電子ビーム検査装置及び電子ビーム検査方法
US12165747B2 (en) 2020-01-23 2024-12-10 The Broad Institute, Inc. Molecular spatial mapping of metastatic tumor microenvironment
US11056312B1 (en) 2020-02-05 2021-07-06 Kla Corporation Micro stigmator array for multi electron beam system
CN116917478A (zh) 2020-12-22 2023-10-20 亥姆霍兹慕尼黑中心-德国健康与环境研究中心(有限公司) Crispr/cas13在rna病毒和/或细菌诱导的疾病的治疗中的应用
TWI872403B (zh) * 2022-12-05 2025-02-11 易發精機股份有限公司 用於晶圓的自動光學檢測系統及其影像處理方法
CN117276112B (zh) * 2023-11-22 2024-04-12 宁德时代新能源科技股份有限公司 缺陷检测方法、装置、设备及计算机可读存储介质

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5973323A (en) * 1997-11-05 1999-10-26 Kla-Tencor Corporation Apparatus and method for secondary electron emission microscope
US6465781B1 (en) * 1999-06-11 2002-10-15 Hitachi, Ltd. Method and apparatus for inspecting or measuring a sample based on charged-particle beam imaging, and a charged-particle beam apparatus
CN101452867A (zh) * 2007-11-28 2009-06-10 上海华虹Nec电子有限公司 自动检测硅片边缘的方法
TW200939283A (en) * 2005-03-03 2009-09-16 Ebara Corp Mapping projection type electron beam apparatus and defects inspection system using such apparatus

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3924156A (en) * 1974-06-26 1975-12-02 Ibm Method and system for correcting an aberration of a beam of charged particles
US4420691A (en) * 1978-12-28 1983-12-13 Fujitsu Limited Method of aligning electron beam apparatus
US6352799B1 (en) * 1999-03-03 2002-03-05 Nikon Corporation Charged-particle-beam pattern-transfer methods and apparatus including beam-drift measurement and correction, and device manufacturing methods comprising same
US6664546B1 (en) * 2000-02-10 2003-12-16 Kla-Tencor In-situ probe for optimizing electron beam inspection and metrology based on surface potential
JP2002359170A (ja) * 2001-05-30 2002-12-13 Nikon Corp ステージ装置及び露光装置
KR20040062609A (ko) * 2001-11-02 2004-07-07 가부시키 가이샤 에바라 세이사꾸쇼 내장형 검사장치를 구비한 반도체 제조장치 및 그것을위한 방법
WO2003067636A1 (fr) * 2002-01-22 2003-08-14 Tokyo Electron Limited Dispositif et procede de traitement de surface
US6903338B2 (en) * 2003-01-30 2005-06-07 Kla-Tencor Technologies Corporation Method and apparatus for reducing substrate edge effects in electron lenses
US7340087B2 (en) 2003-07-14 2008-03-04 Rudolph Technologies, Inc. Edge inspection
JPWO2005024807A1 (ja) * 2003-09-08 2006-11-09 松下電器産業株式会社 ディスク原盤の製造方法、ディスク原盤の製造装置、ディスク原盤の移動距離差検出方法、およびディスク原盤の移動距離差検出装置
KR101060982B1 (ko) * 2003-11-28 2011-08-31 가부시키가이샤 니콘 노광 방법 및 디바이스 제조 방법, 노광 장치, 그리고 프로그램을 기록한 컴퓨터 판독가능 기록 매체
US7205539B1 (en) * 2005-03-10 2007-04-17 Kla-Tencor Technologies Corporation Sample charging control in charged-particle systems
JP4571053B2 (ja) * 2005-09-29 2010-10-27 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置
CN101145575A (zh) * 2006-09-15 2008-03-19 应用智慧有限公司 非易失性存储单元及阵列
US8038897B2 (en) * 2007-02-06 2011-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for wafer inspection
US8492178B2 (en) 2007-02-23 2013-07-23 Rudolph Technologies, Inc. Method of monitoring fabrication processing including edge bead removal processing
US7791022B2 (en) * 2007-03-13 2010-09-07 Advantest Corp. Scanning electron microscope with length measurement function and dimension length measurement method
DE102007024525B4 (de) 2007-03-19 2009-05-28 Vistec Semiconductor Systems Gmbh Vorrichtung und Verfahren zur Bewertung von Defekten am Randbereich eines Wafers
JP5079410B2 (ja) * 2007-07-06 2012-11-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TWI479570B (zh) * 2007-12-26 2015-04-01 奈華科技有限公司 從樣本移除材料之方法及系統
JP2009302415A (ja) * 2008-06-17 2009-12-24 Hitachi High-Technologies Corp 荷電粒子線装置，試料保持システム，試料の保持方法、および、試料の離脱方法
US8010930B2 (en) * 2008-12-29 2011-08-30 International Business Machine Corporation Extracting consistent compact model parameters for related devices
US8258475B2 (en) * 2009-01-19 2012-09-04 Hitachi High-Technologies Corporation Charged particle radiation device provided with aberration corrector
JP5178558B2 (ja) * 2009-02-03 2013-04-10 株式会社日立ハイテクノロジーズ 荷電粒子線の光軸調整方法、及び荷電粒子線装置
JP5506345B2 (ja) * 2009-11-26 2014-05-28 株式会社日立ハイテクノロジーズ 荷電粒子線顕微鏡および当該荷電粒子顕微鏡の制御方法
EP2557584A1 (en) * 2011-08-10 2013-02-13 Fei Company Charged-particle microscopy imaging method
US20140118240A1 (en) * 2012-11-01 2014-05-01 Motorola Mobility Llc Systems and Methods for Configuring the Display Resolution of an Electronic Device Based on Distance
US9091650B2 (en) * 2012-11-27 2015-07-28 Kla-Tencor Corporation Apodization for pupil imaging scatterometry
EP2747121A1 (en) * 2012-12-21 2014-06-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Secondary electron optics & detection device
DE112014001109B4 (de) * 2013-04-12 2019-11-14 Hitachi High-Technologies Corporation Mit einem Strahl geladener Teilchen arbeitende Vorrichtung und Filterelement
US9082580B2 (en) * 2013-09-23 2015-07-14 Kla-Tencor Corporation Notched magnetic lens for improved sample access in an SEM
JP6353229B2 (ja) * 2014-01-22 2018-07-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
CN106030414B (zh) * 2014-02-21 2018-10-09 Asml荷兰有限公司 目标布置的优化和相关的目标
JP2015176683A (ja) * 2014-03-14 2015-10-05 株式会社日立ハイテクノロジーズ 静電チャック機構、及び荷電粒子線装置
US10056224B2 (en) * 2015-08-10 2018-08-21 Kla-Tencor Corporation Method and system for edge-of-wafer inspection and review

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5973323A (en) * 1997-11-05 1999-10-26 Kla-Tencor Corporation Apparatus and method for secondary electron emission microscope
US6465781B1 (en) * 1999-06-11 2002-10-15 Hitachi, Ltd. Method and apparatus for inspecting or measuring a sample based on charged-particle beam imaging, and a charged-particle beam apparatus
TW200939283A (en) * 2005-03-03 2009-09-16 Ebara Corp Mapping projection type electron beam apparatus and defects inspection system using such apparatus
CN101452867A (zh) * 2007-11-28 2009-06-10 上海华虹Nec电子有限公司 自动检测硅片边缘的方法

Also Published As

Publication number Publication date
CN108419448B (zh) 2020-08-04
TWI754599B (zh) 2022-02-01
SG10201913242YA (en) 2020-03-30
US10056224B2 (en) 2018-08-21
US10770258B2 (en) 2020-09-08
JP6854278B2 (ja) 2021-04-07
TW201715225A (zh) 2017-05-01
JP2018526778A (ja) 2018-09-13
TWI735458B (zh) 2021-08-11
WO2017027558A1 (en) 2017-02-16
IL285052B (en) 2022-03-01
CN111785602A (zh) 2020-10-16
CN108419448A (zh) 2018-08-17
KR20180030236A (ko) 2018-03-21
US20170047193A1 (en) 2017-02-16
KR102315789B1 (ko) 2021-10-20
US20190006143A1 (en) 2019-01-03
IL285052A (en) 2021-08-31
IL256858A (en) 2018-03-29
TW202138799A (zh) 2021-10-16
IL256858B (en) 2021-09-30

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