JP5498955B2 - 試料を分析及び/又は加工するための装置及び方法 - Google Patents
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- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
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Description
Claims (30)
- 試料(4)を分析及び/又は加工するための装置であって、
a. 荷電粒子源、
b. 前記荷電粒子源が放射する荷電粒子の荷電粒子ビームを形成する少なくとも1つの粒子光要素、
c. 前記荷電粒子ビームから荷電粒子プローブを生成し、かつ粒子光軸を画定する対物レンズ、及び
d. 前記対物レンズの、前記荷電粒子源が放射する荷電粒子の伝播の方向における下流に配置される第1静電偏向要素を備え、
e. 前記静電偏向要素は、前記荷電粒子ビームを、前記荷電粒子光軸の垂直方向へ偏向し、かつ少なくとも10MHzの偏向帯域幅を有し、
f. 前記装置は、前記荷電粒子ビームが通過する開口部を有する導電性シールド要素を更に備え、前記シールド要素は、前記偏向要素の、前記荷電粒子源が放射する荷電粒子の前記伝播の方向における下流に配置され、
g. 1本以上の管を有するガス供給システムを更に備え、該各管は末端を有し、前記管の前記末端は、前記対物レンズと前記導電性シールド要素の間に配置される
装置。 - 前記静電偏向要素は電極を有し、前記電極は、互いに対して、かつ、前記電極に隣接する、前記装置の更なる構成要素に対して、50pF未満の、好ましくは10pF未満の静電容量を有する、請求項1に記載の装置。
- 前記対物レンズは、前記荷電粒子源に向く源側と、該源側とは反対側のプローブ側とを有し、前記対物レンズは、前記荷電粒子の動的エネルギーを、前記源側から前記プローブ側へ前記対物レンズを通過するとき、5keV以下の動的最終エネルギーまで減少させる静電界浸レンズを備える、請求項2に記載の装置。
- 前記対物レンズは、追加的に、磁気レンズを備える、請求項3に記載の装置。
- 前記ガス供給システムは、前記荷電粒子ビームによる励起の後、前記試料に化学反応を生じさせる反応ガスを供給する、請求項1から4のいずれか一項に記載の装置。
- 反応ガスが前記試料に供給された後、前記試料が前記荷電粒子ビームによって特定の位置を走査されるように、前記ガス供給システム及び前記静電偏向要素を制御する制御システムを更に備える、請求項5に記載の装置。
- 前記試料は、前記荷電粒子ビームによって、前記荷電粒子ビームが前記試料に衝突する位置が、選択可能な滞留時間の間、一定に維持されるように走査され、その後、100ns未満の時間の間、前記試料の他の位置へ走査される、請求項6に記載の装置。
- 前記静電偏向要素と前記シールド要素との間の距離d1は、10μm≦d1≦2.5mmの範囲内にある、請求項1から7のいずれか一項に記載の装置。
- 前記シールド要素の前記開口部は、直線状の、100μm未満の開口寸法を有する、請求項1から8のいずれか一項に記載の装置。
- 前記シールド要素と、前記プローブが前記対物レンズによって内部で生成されるプローブ平面との間の距離d2は、50μm未満である、請求項1から8のいずれか一項に記載の装置。
- 前記静電偏向要素(6、22)は、直径d3<100μm、好ましくはd3<30μmの直径を有する視野において、前記荷電粒子ビームを遮らない寸法の内側開口部を有する、請求項1から10のいずれか一項に記載の装置。
- 前記静電偏向要素(6、22)は、0.05mm≦d4≦5mmの範囲にある直径d4と、好ましくは、0.05mm≦l≦20mmの範囲にある長さlとをもつ内側開口部を有する、請求項7に記載の装置。
- 前記静電偏向要素(6、22)は、50μm≦w≦3mmの幅wを有するスリット(9)によって分離される複数の電極(6)を備える、請求項1から12のいずれか一項に記載の装置。
- 前記対物レンズ(21)の源側に配置される第2静電偏向要素(20)を更に備える、請求項1から13のいずれか一項に記載の装置。
- 前記プローブが前記対物レンズによって内部で生成されるプローブ平面内の前記荷電粒子プローブの位置が一定に維持されている間、前記荷電粒子ビーム(26、27)が角度偏向されるように、前記第1(22)及び前記第2(20)静電偏向要素に適用される偏向電圧を制御する偏向制御器を更に備える、請求項14に記載の装置。
- 前記第1静電偏向要素(22)と前記試料(4)の表面との間に配置され、かつ、前記ビーム(26、27)が偏向される時、前記荷電粒子ビーム(26、27)を少なくとも一部遮断する遮断要素(23)を更に備える、請求項1から15のいずれか一項に記載の装置。
- 前記第1(22)及び/又は第2(20)静電偏向要素は、双極子、4極子、6極子、8極子、10極子からなる群の一つである、請求項1から16のいずれか一項に記載の装置。
- 試料を分析及び/又は加工するための方法であって、
a. 荷電粒子の一次ビームを前記試料の表面に向け、前記粒子の一次ビームが前記試料の表面に到達する前に、前記粒子の一次ビームに、対物レンズ、第1静電偏向要素及び導電性シールド要素をこの順に通過させるステップ、
b. 前記荷電粒子の一次ビームを、前記試料の表面上の複数の位置へ、該各位置で100ナノ秒以下の最短滞留時間をもって偏向するステップ、及び
c. 前記試料の表面を1種以上のガスに晒すステップ
を含む方法。 - 前記最短滞留時間を60ナノ秒以下とする、請求項18に記載の方法。
- ある位置における滞留時間を、該位置のためのリフレッシュ時間とは独立して制御する、請求項18又は19に記載の方法。
- 前記複数の位置を、連続する走査経路(100)が実質的に分離されるように走査する、請求項18から20のいずれか一項に記載の方法。
- 前記複数の位置を、1より大きく、好ましくは2を超え20未満である整数をnとして、前記荷電粒子プローブの直径のn倍のラインステップ寸法(102)をもつ、1本以上の蛇行ライン(100)内で走査する、請求項18から21のいずれか一項に記載の方法。
- 前記荷電粒子プローブの前記位置を、前記荷電粒子ビームの前記試料への照射により前記試料上に生成される第2荷電粒子を評価するユニットによる制御に基づいて走査する、請求項18から22のいずれか一項に記載の方法。
- 前記試料はクロム層を備え、前記ガスは、ハロゲン及び酸素を放出する化合物を含む化合物を備える、請求項18から23のいずれか一項に記載の方法。
- 前記ガスは、XeF2及びH2Oを備える、請求項18から24のいずれか一項に記載の方法。
- 前記1以上のガスの分圧を、前記ガスを前記試料へ供給する容器を冷却することにより制御する、請求項18から25のいずれか一項に記載の方法。
- 前記試料でのH2Oの分圧を、前記試料のクロム層の本質的に平面的なエッチングを確実にするのに十分な低さとする、請求項25に記載の方法。
- 前記H2Oは、容器内で−30℃と−40℃の間の温度に保ち、前記XeF2は、容器内で0℃の温度に保つ、請求項25又は27に記載の方法。
- 請求項1から17のいずれか一項に記載の装置を使用する、請求項18から28のいずれか一項に記載の、試料を分析及び/又は加工する方法。
- 請求項18から27のいずれか一項に記載の方法により処理されるデバイスであって、特にリソグラフィーマスク又は半導体デバイス。
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DE102008037943B4 (de) | 2008-08-14 | 2018-04-26 | Nawotec Gmbh | Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens |
CN102597312B (zh) * | 2009-11-16 | 2015-08-05 | Fei公司 | 用于束处理系统的气体传输 |
JP5123349B2 (ja) * | 2010-04-19 | 2013-01-23 | Hoya株式会社 | 多階調マスクの製造方法 |
US8686379B1 (en) * | 2010-09-07 | 2014-04-01 | Joseph C. Robinson | Method and apparatus for preparing serial planar cross sections |
US8853078B2 (en) * | 2011-01-30 | 2014-10-07 | Fei Company | Method of depositing material |
US9090973B2 (en) | 2011-01-31 | 2015-07-28 | Fei Company | Beam-induced deposition of low-resistivity material |
JP5581248B2 (ja) * | 2011-03-08 | 2014-08-27 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
CN102179326B (zh) * | 2011-04-29 | 2012-08-22 | 厦门大学 | 连续工作可控静电喷射装置 |
EP2575159B1 (en) * | 2011-09-30 | 2016-04-20 | Carl Zeiss Microscopy GmbH | Particle beam system and method for operating the same |
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