JP6853770B2 - 半導体装置および表示装置 - Google Patents

半導体装置および表示装置 Download PDF

Info

Publication number
JP6853770B2
JP6853770B2 JP2017230723A JP2017230723A JP6853770B2 JP 6853770 B2 JP6853770 B2 JP 6853770B2 JP 2017230723 A JP2017230723 A JP 2017230723A JP 2017230723 A JP2017230723 A JP 2017230723A JP 6853770 B2 JP6853770 B2 JP 6853770B2
Authority
JP
Japan
Prior art keywords
gate electrode
film
electrode
insulating layer
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017230723A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019102602A (ja
JP2019102602A5 (enExample
Inventor
康浩 寺井
康浩 寺井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Joled Inc
Original Assignee
Joled Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Joled Inc filed Critical Joled Inc
Priority to JP2017230723A priority Critical patent/JP6853770B2/ja
Priority to US16/174,284 priority patent/US10886411B2/en
Publication of JP2019102602A publication Critical patent/JP2019102602A/ja
Publication of JP2019102602A5 publication Critical patent/JP2019102602A5/ja
Application granted granted Critical
Publication of JP6853770B2 publication Critical patent/JP6853770B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2017230723A 2017-11-30 2017-11-30 半導体装置および表示装置 Active JP6853770B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017230723A JP6853770B2 (ja) 2017-11-30 2017-11-30 半導体装置および表示装置
US16/174,284 US10886411B2 (en) 2017-11-30 2018-10-30 Semiconductor device and display unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017230723A JP6853770B2 (ja) 2017-11-30 2017-11-30 半導体装置および表示装置

Publications (3)

Publication Number Publication Date
JP2019102602A JP2019102602A (ja) 2019-06-24
JP2019102602A5 JP2019102602A5 (enExample) 2019-09-26
JP6853770B2 true JP6853770B2 (ja) 2021-03-31

Family

ID=66633563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017230723A Active JP6853770B2 (ja) 2017-11-30 2017-11-30 半導体装置および表示装置

Country Status (2)

Country Link
US (1) US10886411B2 (enExample)
JP (1) JP6853770B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN210607259U (zh) * 2019-12-13 2020-05-22 北京京东方技术开发有限公司 显示基板和显示装置
CN111682057B (zh) * 2020-07-07 2021-09-24 深圳市华星光电半导体显示技术有限公司 显示面板及显示面板的制备方法
US11843022B2 (en) * 2020-12-03 2023-12-12 Sharp Kabushiki Kaisha X-ray imaging panel and method of manufacturing X-ray imaging panel
US11916094B2 (en) * 2021-08-02 2024-02-27 Sharp Display Technology Corporation Photoelectric conversion panel and method for manufacturing photoelectric conversion panel

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4094179B2 (ja) * 1998-08-21 2008-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4472064B2 (ja) * 1998-08-31 2010-06-02 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP4202502B2 (ja) * 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
KR101058105B1 (ko) * 2009-04-06 2011-08-24 삼성모바일디스플레이주식회사 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법
KR101746198B1 (ko) * 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
KR102143924B1 (ko) * 2013-07-12 2020-08-13 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102294507B1 (ko) * 2013-09-06 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102132181B1 (ko) * 2013-12-31 2020-07-10 엘지디스플레이 주식회사 유기 발광 디스플레이 장치와 이의 제조 방법
JP6523695B2 (ja) * 2014-02-05 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
KR102524983B1 (ko) * 2014-11-28 2023-04-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 모듈, 및 전자 기기
KR20160086016A (ko) * 2015-01-08 2016-07-19 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
JP6920785B2 (ja) * 2015-08-19 2021-08-18 株式会社ジャパンディスプレイ 表示装置
JP6654466B2 (ja) 2015-08-31 2020-02-26 株式会社Ｊｏｌｅｄ 半導体装置、表示装置、表示装置の製造方法および電子機器
JP6970511B2 (ja) * 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
JP2017191917A (ja) * 2016-04-15 2017-10-19 株式会社Ｊｏｌｅｄ 薄膜トランジスタ基板の製造方法
WO2017208923A1 (ja) * 2016-05-31 2017-12-07 凸版印刷株式会社 有機薄膜トランジスタおよび画像表示装置
CN107644941A (zh) * 2016-07-22 2018-01-30 上海和辉光电有限公司 一种有机发光二极管器件的薄膜封装构件
CN109643659B (zh) * 2016-08-23 2022-07-26 凸版印刷株式会社 有机薄膜晶体管及其制造方法以及图像显示装置
US20180190672A1 (en) * 2017-01-03 2018-07-05 Innolux Corporation Display device

Also Published As

Publication number Publication date
US20190165183A1 (en) 2019-05-30
JP2019102602A (ja) 2019-06-24
US10886411B2 (en) 2021-01-05

Similar Documents

Publication Publication Date Title
US10283579B2 (en) Semiconductor device, display unit, method of manufacturing display unit, and electronic apparatus
US10580904B2 (en) Thin film transistor and display device including thin film transistor
US20170346027A1 (en) Electronic device, display unit, and electronic apparatus
JP6654466B2 (ja) 半導体装置、表示装置、表示装置の製造方法および電子機器
JP6853770B2 (ja) 半導体装置および表示装置
WO2018221294A1 (ja) アクティブマトリクス基板およびその製造方法
US10431603B2 (en) Semiconductor device
JP2018064033A (ja) 半導体装置、表示装置および電子機器
JP6811096B2 (ja) 半導体装置、表示装置および電子機器
US10825882B2 (en) Semiconductor device and display unit
JP6706587B2 (ja) 半導体装置、表示装置および電子機器
JP2017212360A (ja) 薄膜トランジスタ、表示装置および電子機器
JP7598749B2 (ja) 半導体装置
JP6781051B2 (ja) 半導体装置、表示装置および電子機器
JP2020136506A (ja) 半導体装置、表示装置および半導体装置の製造方法
JP2019192851A (ja) 半導体装置
US11239371B2 (en) Thin-film transistor including source-drain electrodes connected to a semiconducting film and extending through a semiconductor auxiliary film
US11127762B2 (en) Semiconductor device and display including wiring line having protective metal film
JP6732713B2 (ja) 半導体装置および表示装置
US11081591B2 (en) Semiconductor device and display unit
JP2018170319A (ja) 半導体装置およびその製造方法、並びに表示装置
JP6732829B2 (ja) 半導体装置および表示装置
JP2019145562A (ja) 薄膜トランジスタおよび表示装置
JP2018195630A (ja) トランジスタおよび表示装置
JP2018160518A (ja) 半導体装置、表示装置および電子機器

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190710

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190816

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200520

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200602

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200612

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20201110

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201214

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210302

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210312

R151 Written notification of patent or utility model registration

Ref document number: 6853770

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

S303 Written request for registration of pledge or change of pledge

Free format text: JAPANESE INTERMEDIATE CODE: R316303

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S803 Written request for registration of cancellation of provisional registration

Free format text: JAPANESE INTERMEDIATE CODE: R316803

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350