JP6814674B2 - シート拡張装置 - Google Patents
シート拡張装置 Download PDFInfo
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- JP6814674B2 JP6814674B2 JP2017058814A JP2017058814A JP6814674B2 JP 6814674 B2 JP6814674 B2 JP 6814674B2 JP 2017058814 A JP2017058814 A JP 2017058814A JP 2017058814 A JP2017058814 A JP 2017058814A JP 6814674 B2 JP6814674 B2 JP 6814674B2
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- 238000001514 detection method Methods 0.000 claims description 70
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- 238000003825 pressing Methods 0.000 claims description 12
- 230000003028 elevating effect Effects 0.000 description 23
- 230000007246 mechanism Effects 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 14
- 239000000758 substrate Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000001186 cumulative effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
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- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
Description
10 被加工物ユニット
11 環状フレーム
12 エキスパンドシート
13 被加工物
13a 外周
14 開口
15 分割予定ライン
16 改質層
20 フレーム固定手段
21 支持台
22 支持面
23 カバープレート
24 支持脚
25 円形開口
26 円形開口
30 昇降台(拡張手段、押圧部)
31 ボールねじ機構(拡張手段)
33 ローラー(拡張手段、押圧部)
34 段部
35 ボールねじ機構
36 シリンダロッド
40 制御手段
40a 記憶部
40b 比較部
40c 駆動制御部
41 報知手段
50 弾性波検出センサ
51 弾性波検出センサ
52 弾性波検出センサ
53 弾性波検出センサ
C チップ
Claims (1)
- 交差する複数の分割予定ラインに沿って分割起点が形成された被加工物又は分割後の個々のチップの裏面に貼着されたフィルム状接着剤の裏面に貼着されたエキスパンドシートを介して中央に開口を有する環状フレームに該被加工物が支持された形態で、該エキスパンドシートを拡張して、該分割起点に沿って該被加工物を又は個々のチップに沿って該フィルム状接着剤を分割するシート拡張装置であって、
被加工物ユニットの該環状フレームを支持する支持面を有し、該支持面上に載置された該環状フレームを固定する環状フレーム固定手段と、
該環状フレーム固定手段で固定された該環状フレームの内周と該被加工物の外周との間の該エキスパンドシートを押圧部で押圧して該エキスパンドシートを拡張する拡張手段と、
該エキスパンドシートを拡張して、該分割起点に沿って該被加工物が又は個々のチップに沿って該フィルム状接着剤が破断する際に発生する弾性波を検出する弾性波検出センサと、
制御手段と、を備え、
該制御手段は、該分割起点に沿って該被加工物が又は個々のチップに沿って該フィルム状接着剤が完全に破断した際の該弾性波検出センサからの出力信号の値を基準として閾値として予め記憶する記憶部を備え、
該エキスパンドシートを拡張して該分割起点に沿って該被加工物を又は個々のチップに沿って該フィルム状接着剤を破断する際に、該弾性波検出センサからの該出力信号が閾値に到達していない場合に、未破断領域が存在するとしてエラー信号を出力すること、を特徴とするシート拡張装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017058814A JP6814674B2 (ja) | 2017-03-24 | 2017-03-24 | シート拡張装置 |
KR1020180030690A KR102326394B1 (ko) | 2017-03-24 | 2018-03-16 | 시트 확장 장치 |
CN201810233574.1A CN108630592B (zh) | 2017-03-24 | 2018-03-21 | 片材扩展装置 |
TW107109815A TWI755505B (zh) | 2017-03-24 | 2018-03-22 | 片擴張裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017058814A JP6814674B2 (ja) | 2017-03-24 | 2017-03-24 | シート拡張装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018163917A JP2018163917A (ja) | 2018-10-18 |
JP6814674B2 true JP6814674B2 (ja) | 2021-01-20 |
Family
ID=63696167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017058814A Active JP6814674B2 (ja) | 2017-03-24 | 2017-03-24 | シート拡張装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6814674B2 (ja) |
KR (1) | KR102326394B1 (ja) |
CN (1) | CN108630592B (ja) |
TW (1) | TWI755505B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7285636B2 (ja) * | 2018-12-06 | 2023-06-02 | 株式会社ディスコ | 板状物の加工方法 |
JP7326861B2 (ja) * | 2019-05-17 | 2023-08-16 | 三菱電機株式会社 | 半導体製造装置及び半導体装置の製造方法 |
CN114999955B (zh) * | 2022-05-17 | 2024-06-28 | 合肥欣奕华智能机器股份有限公司 | 一种扩晶机及其控制方法 |
CN118651472B (zh) * | 2024-08-14 | 2024-10-18 | 东营宝丰汽车配件有限公司 | 一种刹车片加工用包装机 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004105109A1 (ja) * | 2003-05-22 | 2004-12-02 | Tokyo Seimitsu Co., Ltd. | ダイシング装置 |
JP2005251986A (ja) * | 2004-03-04 | 2005-09-15 | Disco Abrasive Syst Ltd | ウエーハの分離検出方法および分離検出装置 |
JP2007268563A (ja) * | 2006-03-31 | 2007-10-18 | Toray Eng Co Ltd | レーザスクライブ装置及びレーザスクライブ方法 |
JP2009064905A (ja) * | 2007-09-05 | 2009-03-26 | Disco Abrasive Syst Ltd | 拡張方法および拡張装置 |
JP2009272503A (ja) | 2008-05-09 | 2009-11-19 | Disco Abrasive Syst Ltd | フィルム状接着剤の破断装置及び破断方法 |
JP5931772B2 (ja) * | 2013-02-13 | 2016-06-08 | 株式会社東芝 | 半導体製造装置 |
JP2015177060A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 半導体製造装置および半導体装置の製造方法 |
JP2016001677A (ja) * | 2014-06-12 | 2016-01-07 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016004832A (ja) * | 2014-06-13 | 2016-01-12 | 株式会社ディスコ | テープ拡張装置 |
JP6320198B2 (ja) * | 2014-06-27 | 2018-05-09 | 株式会社ディスコ | テープ拡張装置 |
-
2017
- 2017-03-24 JP JP2017058814A patent/JP6814674B2/ja active Active
-
2018
- 2018-03-16 KR KR1020180030690A patent/KR102326394B1/ko active IP Right Grant
- 2018-03-21 CN CN201810233574.1A patent/CN108630592B/zh active Active
- 2018-03-22 TW TW107109815A patent/TWI755505B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201835992A (zh) | 2018-10-01 |
KR102326394B1 (ko) | 2021-11-12 |
JP2018163917A (ja) | 2018-10-18 |
CN108630592B (zh) | 2023-07-07 |
CN108630592A (zh) | 2018-10-09 |
TWI755505B (zh) | 2022-02-21 |
KR20180108457A (ko) | 2018-10-04 |
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