JP6802883B2 - プラズマ処理方法 - Google Patents
プラズマ処理方法 Download PDFInfo
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- JP6802883B2 JP6802883B2 JP2019110321A JP2019110321A JP6802883B2 JP 6802883 B2 JP6802883 B2 JP 6802883B2 JP 2019110321 A JP2019110321 A JP 2019110321A JP 2019110321 A JP2019110321 A JP 2019110321A JP 6802883 B2 JP6802883 B2 JP 6802883B2
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- 238000003672 processing method Methods 0.000 title claims description 17
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 107
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 90
- 229910052796 boron Inorganic materials 0.000 claims description 90
- 238000012545 processing Methods 0.000 claims description 51
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 39
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 238000009832 plasma treatment Methods 0.000 claims description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 23
- 238000001020 plasma etching Methods 0.000 claims description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052721 tungsten Inorganic materials 0.000 claims description 12
- 239000010937 tungsten Substances 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- 230000006641 stabilisation Effects 0.000 claims description 8
- 238000011105 stabilization Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 182
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- 238000007254 oxidation reaction Methods 0.000 description 3
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- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000002956 ash Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
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- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 235000002918 Fraxinus excelsior Nutrition 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- 238000003682 fluorination reaction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
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Description
また、代表的な本発明に係るプラズマ処理方法の一つは、ホウ素が含有されたアモルファスカーボン膜を有するマスクを用いてプラズマエッチングした後、プラズマを用いてシリコン窒化膜、シリコン酸化膜またはタングステン膜に対して前記アモルファスカーボン膜を選択的に除去するプラズマ処理方法において、O 2 ガスとCH 3 Fガスの混合ガスにより生成されたプラズマを用いて前記アモルファスカーボン膜を除去する除去工程を有し、
前記ホウ素の含有率は、50%以上であり、前記除去工程は、前記アモルファスカーボン膜が除去される試料の温度を121〜182℃の温度にして行われることにより達成される。
また、代表的な本発明に係るプラズマ処理方法の一つは、ホウ素が含有されたアモルファスカーボン膜を有するマスクを用いてプラズマエッチングした後、プラズマを用いてシリコン窒化膜、またはシリコン酸化膜に対して前記アモルファスカーボン膜を選択的に除去するプラズマ処理方法において、O 2 ガスとCH 2 F 2 ガスの混合ガスにより生成されたプラズマを用いて前記アモルファスカーボン膜を除去する除去工程を有し、前記ホウ素の含有率は、50%以上であり、
前記除去工程は、前記アモルファスカーボン膜が除去される試料が載置される試料台の温度を20〜100℃の温度にして行われることにより達成される。
上記した以外の課題、構成及び効果は、以下の実施形態の説明により明らかにされる。
図1は、本実施形態で使用する、ダウンフロータイプの誘導結合型プラズマ源を搭載したプラズマアッシング装置を示す概略図である。真空処理室は、ガス供給プレート101と石英製チャンバ102とチャンバ103で構成されている。ガス供給機構であるガス供給プレート101には、不図示のガス源から処理ガスを導入するためのガス供給口が配置され、更にガス供給口の直下には、処理ガスを石英製チャンバ102内にガスを効率良く外周へ分散するため、分散板104を設けている。
以下、実施形態2について説明する。本実施形態では、O2ガスとCH2F2ガスを図1のプラズマアッシング装置に供給しつつ、図2(a)に示す積層膜(96層以上)を有するウエハに対し、図3のフローに従ってアッシング処理を行うものとする。ホウ素含有アモルファスカーボン膜204のホウ素の含有率は、エッチング工程での選択比向上のため50%以上とした。特に示さない限り、上述した実施の形態と同様な構成及び処理を用いるものとし、重複する説明を省略する。
102 石英製チャンバ、
103 チャンバ、
104 分散板、
105 誘導コイル、
106 試料台、
107 ウエハ、
108 温度調整器、
109 高周波電源、
110 高周波整合器、
111 圧力調整バルブ、
112 分光器、
113 排気口、
114 カバー、
115 圧力スイッチ、
116 ガスバルブ、
201 シリコン、
202 シリコン窒化膜、
203 シリコン酸化膜、
204 ホウ素含有アモルファスカーボン膜、
205 サイドエッチング、
1201 B−ACLアッシング速度、
1202 対SiO2選択比、
1203 対SiN選択比、
1301 B−ACLアッシング速度、
1302 対SiO2選択比、
1303 対SiN選択比
Claims (11)
- ホウ素が含有されたアモルファスカーボン膜を有するマスクを用いてプラズマエッチングした後、プラズマを用いてシリコン窒化膜、シリコン酸化膜またはタングステン膜に対して前記アモルファスカーボン膜を選択的に除去するプラズマ処理方法において、
O2ガスとCH3Fガスの混合ガスにより生成されたプラズマを用いて前記アモルファスカーボン膜を除去する除去工程を有し、
前記ホウ素の含有率は、50%以上であり、
前記除去工程は、前記アモルファスカーボン膜が除去される試料が載置される試料台の温度を80〜120℃の温度にして行われることを特徴とするプラズマ処理方法。 - ホウ素が含有されたアモルファスカーボン膜を有するマスクを用いてプラズマエッチングした後、プラズマを用いてシリコン窒化膜、シリコン酸化膜またはタングステン膜に対して前記アモルファスカーボン膜を選択的に除去するプラズマ処理方法において、
O 2 ガスとCH 3 Fガスの混合ガスにより生成されたプラズマを用いて前記アモルファスカーボン膜を除去する除去工程を有し、
前記ホウ素の含有率は、50%以上であり、
前記除去工程は、前記アモルファスカーボン膜が除去される試料の温度を121〜182℃の温度にして行われることを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記除去工程前、前記O2ガスとCH3Fガスの混合ガスを前記除去工程が行われる処理室に供給しながら前記試料台の温度を前記除去工程と同じ温度にして行われる安定化工程をさらに有することを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記除去工程において、OHを示す波長の発光強度をCOを示す波長の発光強度により除した値の時間変化を用いて前記アモルファスカーボン膜の除去の終了が判定されることを特徴とするプラズマ処理方法。 - 請求項4に記載のプラズマ処理方法において、
前記OHを示す波長は、309nmであり、
前記COを示す波長は、451nmであることを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記除去工程において、処理圧力を250〜1000Paの範囲内の圧力とし、前記混合ガスの流量に対するCH3Fガスの流量の比を5〜12%の範囲内の流量比とし、前記混合ガスの流量を21.5L/min以上とすることを特徴とするプラズマ処理方法。 - 請求項3に記載のプラズマ処理方法において、
前記安定化工程は、プラズマを生成せずに行われることを特徴とするプラズマ処理方法。 - ホウ素が含有されたアモルファスカーボン膜を有するマスクを用いてプラズマエッチングした後、プラズマを用いてシリコン窒化膜、シリコン酸化膜またはタングステン膜に対して前記アモルファスカーボン膜を選択的に除去するプラズマ処理方法において、
O 2 ガスとCH 3 Fガスの混合ガスにより生成されたプラズマを用いて前記アモルファスカーボン膜を除去する除去工程を有し、
前記O2ガスとCH3Fガスの混合ガスの流量に対する前記CH3Fガスの流量の比は、5〜12%の範囲内の値であることを特徴とするプラズマ処理方法。 - ホウ素が含有されたアモルファスカーボン膜を有するマスクを用いてプラズマエッチングした後、プラズマを用いてシリコン窒化膜、またはシリコン酸化膜に対して前記アモルファスカーボン膜を選択的に除去するプラズマ処理方法において、
O2ガスとCH2F2ガスの混合ガスにより生成されたプラズマを用いて前記アモルファスカーボン膜を除去する除去工程を有し、
前記ホウ素の含有率は、50%以上であり、
前記除去工程は、前記アモルファスカーボン膜が除去される試料が載置される試料台の温度を20〜100℃の温度にして行われることを特徴とするプラズマ処理方法。 - ホウ素が含有されたアモルファスカーボン膜を有するマスクを用いてプラズマエッチングした後、プラズマを用いてシリコン窒化膜、またはシリコン酸化膜に対して前記アモルファスカーボン膜を選択的に除去するプラズマ処理方法において、
O 2 ガスとCH 2 F 2 ガスの混合ガスにより生成されたプラズマを用いて前記アモルファスカーボン膜を除去する除去工程を有し、
前記除去工程において、処理圧力を250〜550Paの範囲内の圧力とし、前記混合ガスの流量に対するCH2F2ガスの流量の比を5〜7.5%の範囲内の流量比とし、前記混合ガスの流量を21.5L/min以上とすることを特徴とするプラズマ処理方法。 - 請求項9に記載のプラズマ処理方法において、
前記除去工程において、処理圧力を250〜550Paの範囲内の圧力とし、前記混合ガスの流量に対するCH2F2ガスの流量の比を5〜7.5%の範囲内の流量比とし、前記混合ガスの流量を21.5L/min以上とすることを特徴とするプラズマ処理方法。
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