JP6775854B2 - 磁気素子 - Google Patents
磁気素子 Download PDFInfo
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- JP6775854B2 JP6775854B2 JP2019538190A JP2019538190A JP6775854B2 JP 6775854 B2 JP6775854 B2 JP 6775854B2 JP 2019538190 A JP2019538190 A JP 2019538190A JP 2019538190 A JP2019538190 A JP 2019538190A JP 6775854 B2 JP6775854 B2 JP 6775854B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/325—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/032—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials
- H01F1/04—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
- H01F10/3259—Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Measuring Magnetic Variables (AREA)
Description
本発明の解決しようとする技術的課題は、ホイートストンブリッジ構造の磁気センサで磁化困難軸方向の外部磁場に対するセンシング範囲を増加させることである。
図11Bは、本発明の一実施例によるGMR抵抗素子を示す断面図である。
Claims (12)
- 面内磁化方向を有する固定層と、
面内磁化方向を有して前記固定層と垂直に離隔されて整列された自由層と、
前記固定層と前記自由層との間に配置された導電スペーサ層と、
前記固定層の磁化方向を固定し、前記固定層と垂直に離隔されて整列された反強磁性層と、
前記固定層と前記反強磁性層との間に配置された貴金属スペーサ層と、を含むことを特徴とする磁気素子。 - 前記貴金属スペーサ層は、銅又は白金の単層薄膜、銅及び白金の多層薄膜であり、
前記貴金属スペーサ層の厚さは、0.1 nmないし0.8 nmであることを特徴とする請求項1に記載の磁気素子。 - 前記自由層は形状磁気異方性を有し、
前記磁気素子はホイートストンブリッジ構造で連結されることを特徴とする請求項1に記載の磁気素子。 - 前記導電スペーサ層は銅であり、2.2 nmの厚さを有することを特徴とする請求項1に記載の磁気素子。
- 前記貴金属スペーサ層はPt2Cu1、Cu2Pt1、又はCu3Pt2であり、
ここで下付き文字はオングストローム単位の厚さであることを特徴とする請求項1に記載の磁気素子。 - 前記固定層はCoFeであり、
前記自由層はNiFeの第1強磁性層及びCoFeの第2強磁性層を含むことを特徴とする請求項1に記載の磁気素子。 - 面内磁化方向を有する固定層と、
面内磁化方向を有して前記固定層と垂直に離隔されて整列された自由層と、
前記固定層と前記自由層との間に配置されたトンネル絶縁層と、
前記固定層の磁化方向を固定し、前記固定層と垂直に離隔されて整列された反強磁性層と、
前記固定層と前記反強磁性層との間に配置された貴金属スペーサ層と、を含むことを特徴とする磁気素子。 - 前記貴金属スペーサ層は、銅又は白金の単層薄膜、銅及び白金の多層薄膜であり、
前記貴金属スペーサ層の厚さは、0.1 nmないし0.8 nmであることを特徴とする請求項7に記載の磁気素子。 - 前記自由層は形状磁気異方性を有し、
前記磁気素子はホイートストンブリッジ構造で連結されることを特徴とする請求項7に記載の磁気素子。 - 前記トンネル絶縁層はMgO、AlOx、又はGdOxであることを特徴とする請求項7に記載の磁気素子。
- 前記貴金属スペーサ層はPt2Cu1、Cu2Pt1、又はCu3Pt2であり、
ここで下付き文字はオングストローム単位の厚さであることを特徴とする請求項7に記載の磁気素子。 - 前記固定層はCoFeであり、
前記自由層はNiFeの第1強磁性層及びCoFeの第2強磁性層を含むことを特徴とする請求項7に記載の磁気素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0044205 | 2018-04-17 | ||
KR1020180044205A KR102127043B1 (ko) | 2018-04-17 | 2018-04-17 | 자기 소자 |
PCT/KR2019/003114 WO2019203454A1 (ko) | 2018-04-17 | 2019-03-18 | 자기 소자 |
Publications (2)
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JP2020522119A JP2020522119A (ja) | 2020-07-27 |
JP6775854B2 true JP6775854B2 (ja) | 2020-10-28 |
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JP2019538190A Active JP6775854B2 (ja) | 2018-04-17 | 2019-03-18 | 磁気素子 |
Country Status (5)
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US (1) | US11163023B2 (ja) |
JP (1) | JP6775854B2 (ja) |
KR (1) | KR102127043B1 (ja) |
CN (1) | CN110612582B (ja) |
WO (1) | WO2019203454A1 (ja) |
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US11209505B2 (en) * | 2019-08-26 | 2021-12-28 | Western Digital Technologies, Inc. | Large field range TMR sensor using free layer exchange pinning |
CN111613662B (zh) * | 2020-05-27 | 2021-06-11 | 东北大学 | 偏压诱导共线反铁磁材料产生自旋极化电流的调控方法 |
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EP0905802B1 (en) * | 1997-09-29 | 2004-11-24 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device, magnetoresistance head and method for producing magnetoresistance effect device |
US6738236B1 (en) * | 1998-05-07 | 2004-05-18 | Seagate Technology Llc | Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature |
US6201671B1 (en) * | 1998-12-04 | 2001-03-13 | International Business Machines Corporation | Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor |
JP2000242913A (ja) * | 1999-02-23 | 2000-09-08 | Matsushita Electric Ind Co Ltd | 磁気抵抗効果素子および磁気抵抗効果型ヘッド |
JP4338060B2 (ja) * | 1999-05-27 | 2009-09-30 | Fdk株式会社 | 磁気センサの製造方法 |
JP2003008104A (ja) * | 2001-06-25 | 2003-01-10 | Hitachi Ltd | ハーフメタルマグネタイト膜を固定層化させたtmr素子 |
JP2003124540A (ja) * | 2001-10-12 | 2003-04-25 | Sony Corp | 磁気抵抗効果型素子、磁気抵抗効果型ヘッド |
JP4487472B2 (ja) * | 2002-07-05 | 2010-06-23 | 株式会社日立製作所 | 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ |
US7081658B2 (en) * | 2004-06-28 | 2006-07-25 | International Business Machines Corporation | Techniques for reducing Neel coupling in toggle switching semiconductor devices |
US7859034B2 (en) * | 2005-09-20 | 2010-12-28 | Grandis Inc. | Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer |
US7973349B2 (en) * | 2005-09-20 | 2011-07-05 | Grandis Inc. | Magnetic device having multilayered free ferromagnetic layer |
US7777261B2 (en) * | 2005-09-20 | 2010-08-17 | Grandis Inc. | Magnetic device having stabilized free ferromagnetic layer |
US7286395B2 (en) * | 2005-10-27 | 2007-10-23 | Grandis, Inc. | Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells |
KR101446334B1 (ko) * | 2008-05-07 | 2014-10-01 | 삼성전자주식회사 | 자기 저항 소자 |
US9007055B2 (en) * | 2008-09-12 | 2015-04-14 | Hitachi Metals, Ltd. | Self-pinned spin valve magnetoresistance effect film and magnetic sensor using the same, and rotation angle detection device |
JP2010129105A (ja) * | 2008-11-25 | 2010-06-10 | Fujitsu Ltd | 磁気抵抗効果素子、磁気ヘッドの製造方法及び磁気再生記録装置 |
US20140110804A1 (en) * | 2012-10-18 | 2014-04-24 | Agency For Science, Technology And Research | Magnetoresistive device and method for forming the same |
KR101521013B1 (ko) * | 2013-04-03 | 2015-05-28 | 인하대학교 산학협력단 | 수직 방향 자기저항 소자 |
US20160202330A1 (en) * | 2013-09-09 | 2016-07-14 | Hitachi, Ltd. | Magnetic sensor element |
CN105449096B (zh) * | 2015-11-17 | 2017-10-24 | 四川大学 | 磁性薄膜结构及其制造、使用方法和磁敏传感单元、阵列 |
JP6581516B2 (ja) * | 2016-01-26 | 2019-09-25 | 株式会社東芝 | 磁気センサおよび磁気センサ装置 |
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- 2018-04-17 KR KR1020180044205A patent/KR102127043B1/ko active IP Right Grant
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- 2019-03-18 JP JP2019538190A patent/JP6775854B2/ja active Active
- 2019-03-18 WO PCT/KR2019/003114 patent/WO2019203454A1/ko active Application Filing
- 2019-03-18 CN CN201980001174.0A patent/CN110612582B/zh active Active
- 2019-06-20 US US16/446,962 patent/US11163023B2/en active Active
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WO2019203454A1 (ko) | 2019-10-24 |
KR20190120867A (ko) | 2019-10-25 |
JP2020522119A (ja) | 2020-07-27 |
US11163023B2 (en) | 2021-11-02 |
CN110612582A (zh) | 2019-12-24 |
KR102127043B1 (ko) | 2020-06-25 |
US20190339341A1 (en) | 2019-11-07 |
CN110612582B (zh) | 2021-10-29 |
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