JP6771997B2 - 露光装置、露光方法、および物品製造方法 - Google Patents

露光装置、露光方法、および物品製造方法 Download PDF

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Publication number
JP6771997B2
JP6771997B2 JP2016163562A JP2016163562A JP6771997B2 JP 6771997 B2 JP6771997 B2 JP 6771997B2 JP 2016163562 A JP2016163562 A JP 2016163562A JP 2016163562 A JP2016163562 A JP 2016163562A JP 6771997 B2 JP6771997 B2 JP 6771997B2
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Japan
Prior art keywords
optical system
exposure apparatus
curvature
slit
projection optical
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JP2016163562A
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English (en)
Japanese (ja)
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JP2018031873A (ja
JP2018031873A5 (zh
Inventor
文靖 大野
文靖 大野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2016163562A priority Critical patent/JP6771997B2/ja
Priority to TW106124165A priority patent/TWI658333B/zh
Priority to KR1020170103409A priority patent/KR102212723B1/ko
Priority to CN201710728228.6A priority patent/CN107783383B/zh
Publication of JP2018031873A publication Critical patent/JP2018031873A/ja
Publication of JP2018031873A5 publication Critical patent/JP2018031873A5/ja
Application granted granted Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2016163562A 2016-08-24 2016-08-24 露光装置、露光方法、および物品製造方法 Active JP6771997B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016163562A JP6771997B2 (ja) 2016-08-24 2016-08-24 露光装置、露光方法、および物品製造方法
TW106124165A TWI658333B (zh) 2016-08-24 2017-07-19 Exposure device, exposure method, and article manufacturing method
KR1020170103409A KR102212723B1 (ko) 2016-08-24 2017-08-16 노광 장치, 노광 방법 및 물품 제조 방법
CN201710728228.6A CN107783383B (zh) 2016-08-24 2017-08-23 曝光装置、曝光方法以及物品制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016163562A JP6771997B2 (ja) 2016-08-24 2016-08-24 露光装置、露光方法、および物品製造方法

Publications (3)

Publication Number Publication Date
JP2018031873A JP2018031873A (ja) 2018-03-01
JP2018031873A5 JP2018031873A5 (zh) 2019-09-12
JP6771997B2 true JP6771997B2 (ja) 2020-10-21

Family

ID=61303054

Family Applications (1)

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JP2016163562A Active JP6771997B2 (ja) 2016-08-24 2016-08-24 露光装置、露光方法、および物品製造方法

Country Status (4)

Country Link
JP (1) JP6771997B2 (zh)
KR (1) KR102212723B1 (zh)
CN (1) CN107783383B (zh)
TW (1) TWI658333B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7204400B2 (ja) * 2018-09-28 2023-01-16 キヤノン株式会社 露光装置及び物品の製造方法
CN110412836A (zh) * 2019-07-31 2019-11-05 江苏盟星智能科技有限公司 一种激光直接成像曝光机及其成像方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5883836A (ja) * 1981-11-13 1983-05-19 Hitachi Ltd 円弧状照明光形成スリツト
JP2001085328A (ja) * 1993-06-11 2001-03-30 Nikon Corp 投影露光方法及び装置、並びに素子製造方法
JPH07273005A (ja) * 1994-03-29 1995-10-20 Nikon Corp 投影露光装置
JPH09283434A (ja) * 1996-04-15 1997-10-31 Canon Inc 投影露光装置及びそれを用いたデバイスの製造方法
US5880834A (en) * 1996-10-16 1999-03-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Convex diffraction grating imaging spectrometer
JP3413160B2 (ja) * 2000-06-15 2003-06-03 キヤノン株式会社 照明装置及びそれを用いた走査型露光装置
KR20020001418A (ko) * 2000-06-28 2002-01-09 박종섭 노광 장비의 어퍼처
JP3652329B2 (ja) * 2002-06-28 2005-05-25 キヤノン株式会社 走査露光装置、走査露光方法、デバイス製造方法およびデバイス
JP2004266259A (ja) * 2003-02-10 2004-09-24 Nikon Corp 照明光学装置、露光装置および露光方法
KR20050002310A (ko) * 2003-06-30 2005-01-07 주식회사 하이닉스반도체 변형 조명계 노광장치 및 이를 이용한 감광막 패턴 형성방법
WO2006131242A1 (en) * 2005-06-10 2006-12-14 Carl Zeiss Smt Ag Multiple-use projection system
JP2007158225A (ja) * 2005-12-08 2007-06-21 Canon Inc 露光装置
JP2009164355A (ja) * 2008-01-07 2009-07-23 Canon Inc 走査露光装置およびデバイス製造方法
JP2010118403A (ja) * 2008-11-11 2010-05-27 Canon Inc 走査型露光装置、及びデバイスの製造方法
WO2010061674A1 (ja) * 2008-11-28 2010-06-03 株式会社ニコン 補正ユニット、照明光学系、露光装置、およびデバイス製造方法
JP2010197517A (ja) * 2009-02-23 2010-09-09 Canon Inc 照明光学装置、露光装置およびデバイス製造方法
JP2011039172A (ja) 2009-08-07 2011-02-24 Canon Inc 露光装置およびデバイス製造方法
JP2011108697A (ja) * 2009-11-13 2011-06-02 Nikon Corp 露光量制御方法、露光方法、及びデバイス製造方法
JP2013238670A (ja) * 2012-05-11 2013-11-28 Canon Inc 露光装置、露光方法、デバイスの製造方法及び開口板
JP2014130297A (ja) * 2012-12-29 2014-07-10 Cerma Precision Inc 投影光学系、露光装置、スキャン露光装置及び表示パネルの製造方法
JP2014195048A (ja) * 2013-02-28 2014-10-09 Canon Inc 照明光学系、露光装置及びデバイスの製造方法
CN105093847B (zh) * 2015-08-04 2017-05-10 深圳市华星光电技术有限公司 曝光机

Also Published As

Publication number Publication date
KR102212723B1 (ko) 2021-02-05
JP2018031873A (ja) 2018-03-01
CN107783383A (zh) 2018-03-09
TWI658333B (zh) 2019-05-01
KR20180022578A (ko) 2018-03-06
CN107783383B (zh) 2020-06-09
TW201807508A (zh) 2018-03-01

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