JP6766301B2 - シリコン系溶融組成物およびこれを用いるシリコンカーバイド単結晶の製造方法 - Google Patents
シリコン系溶融組成物およびこれを用いるシリコンカーバイド単結晶の製造方法 Download PDFInfo
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- JP6766301B2 JP6766301B2 JP2019545755A JP2019545755A JP6766301B2 JP 6766301 B2 JP6766301 B2 JP 6766301B2 JP 2019545755 A JP2019545755 A JP 2019545755A JP 2019545755 A JP2019545755 A JP 2019545755A JP 6766301 B2 JP6766301 B2 JP 6766301B2
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- 239000013078 crystal Substances 0.000 title claims description 100
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 78
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 63
- 229910052710 silicon Inorganic materials 0.000 title claims description 63
- 239000010703 silicon Substances 0.000 title claims description 63
- 239000000203 mixture Substances 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 52
- 229910052799 carbon Inorganic materials 0.000 claims description 49
- 239000011651 chromium Substances 0.000 claims description 45
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 23
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 22
- 229910052804 chromium Inorganic materials 0.000 claims description 22
- 229910052720 vanadium Inorganic materials 0.000 claims description 18
- 239000000155 melt Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000004781 supercooling Methods 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 43
- 238000010438 heat treatment Methods 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000012768 molten material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 229910019589 Cr—Fe Inorganic materials 0.000 description 3
- 230000005499 meniscus Effects 0.000 description 3
- 238000005092 sublimation method Methods 0.000 description 3
- 238000003775 Density Functional Theory Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- HBXWYZMULLEJSG-UHFFFAOYSA-N chromium vanadium Chemical compound [V][Cr][V][Cr] HBXWYZMULLEJSG-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000000329 molecular dynamics simulation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
前記式1で、aは0.4以上0.9以下であり、b+cは0.1以上0.6以下であり、c/(b+c)は0.05以上0.95以下であり、dは0.01以上0.1以下である。
前記式1で、aは0.4以上0.9以下であり、b+cは0.1以上0.6以下であり、c/(b+c)は0.05以上0.95以下であり、dは0.01以上0.1以下である。
前記式1で、aは0.4以上0.9以下であり、b+cは0.1以上0.6以下であり、c/(b+c)は0.05以上0.95以下であり、dは0.01以上0.1以下であってもよい。a+b+c+dは1である。
210:種結晶
300:ルツボ
400:加熱部材
500:回転部材
Claims (10)
- シリコンカーバイド単結晶を形成するための溶液成長法に用いられ、
シリコン、クロム(Cr)、バナジウム(V)およびアルミニウム(Al)を含む下記式1で表されるシリコン系溶融組成物:
SiaCrbVcAld(式1)
前記式1で、aは0.4以上0.9以下であり、b+cは0.1以上0.6以下であり、c/(b+c)は0.05以上0.95以下であり、dは0.01以上0.1以下である。 - 前記式1で、aは0.5以上0.8以下であり、b+cは0.2以上0.5以下であり、c/(b+c)は0.1以上0.9以下であり、dは0.01以上0.05以下である、請求項1に記載のシリコン系溶融組成物。
- 前記シリコン系溶融組成物は、1800度(℃)で炭素溶解度が0.04以上である、請求項1または2に記載のシリコン系溶融組成物。
- 前記シリコン系溶融組成物は、1900度(℃)で炭素溶解度が0.06以上である、請求項1または2に記載のシリコン系溶融組成物。
- 前記クロムおよび前記バナジウムの含有量比は、9:1から1:9である、請求項1から4のいずれか一項に記載のシリコン系溶融組成物。
- シリコンカーバイド種結晶を準備する段階、
シリコン、クロム(Cr)、バナジウム(V)およびアルミニウム(Al)を含み、下記式1で表されるシリコン系溶融組成物を準備する段階、
前記シリコン系溶融組成物に炭素(C)を追加して溶融液を形成する段階、そして
前記溶融液を過冷却させて前記シリコンカーバイド種結晶上にシリコンカーバイド単結晶を成長させる段階を含むシリコンカーバイド単結晶の製造方法:
SiaCrbVcAld(式1)
前記式1で、aは0.4以上0.9以下であり、b+cは0.1以上0.6以下であり、c/(b+c)は0.05以上0.95以下であり、dは0.01以上0.1以下である。 - 前記式1で、aは0.5以上0.8以下であり、b+cは0.2以上0.5以下であり、c/(b+c)は0.1以上0.9以下であり、dは0.01以上0.05以下である、請求項6に記載のシリコンカーバイド単結晶の製造方法。
- 前記シリコン系溶融組成物は、1800度(℃)で炭素溶解度が0.04以上である、請求項6または7に記載のシリコンカーバイド単結晶の製造方法。
- 前記シリコン系溶融組成物は、1900度(℃)で炭素溶解度が0.06以上である、請求項6または7に記載のシリコンカーバイド単結晶の製造方法。
- 前記クロムおよび前記バナジウムの含有量比は、9:1から1:9である、請求項6から9のいずれか一項に記載のシリコンカーバイド単結晶の製造方法。
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KR10-2018-0121270 | 2018-10-11 | ||
KR1020180121270A KR102158624B1 (ko) | 2017-11-03 | 2018-10-11 | 실리콘계 용융 조성물 및 이를 이용하는 실리콘카바이드 단결정의 제조 방법 |
PCT/KR2018/013200 WO2019088740A2 (ko) | 2017-11-03 | 2018-11-01 | 실리콘계 용융 조성물 및 이를 이용하는 실리콘카바이드 단결정의 제조 방법 |
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US6503572B1 (en) * | 1999-07-23 | 2003-01-07 | M Cubed Technologies, Inc. | Silicon carbide composites and methods for making same |
JP4453348B2 (ja) | 2003-11-25 | 2010-04-21 | トヨタ自動車株式会社 | 炭化珪素単結晶の製造方法 |
JP4645499B2 (ja) | 2006-03-28 | 2011-03-09 | 住友金属工業株式会社 | 炭化珪素単結晶の製造方法 |
JP2008100890A (ja) * | 2006-10-20 | 2008-05-01 | Sumitomo Metal Ind Ltd | SiC単結晶の製造方法 |
JP5273130B2 (ja) * | 2010-11-26 | 2013-08-28 | 信越化学工業株式会社 | SiC単結晶の製造方法 |
EP2889397B1 (en) * | 2012-08-26 | 2019-04-03 | National University Corporation Nagoya University | Sic single crystal producing method |
US9727844B2 (en) * | 2013-01-02 | 2017-08-08 | International Business Machines Corporation | Online documentation review |
CN105705685A (zh) * | 2013-11-12 | 2016-06-22 | 新日铁住金株式会社 | SiC单晶的制造方法 |
EP2881499B1 (en) | 2013-12-06 | 2020-03-11 | Shin-Etsu Chemical Co., Ltd. | Method for growing silicon carbide crystal |
JP6129064B2 (ja) * | 2013-12-06 | 2017-05-17 | 信越化学工業株式会社 | 炭化珪素の結晶成長方法 |
KR102272432B1 (ko) | 2014-06-11 | 2021-07-05 | (주)에스테크 | 탄화규소 분말, 이의 제조방법 및 탄화규소 단결정 |
JP6119732B2 (ja) * | 2014-09-09 | 2017-04-26 | トヨタ自動車株式会社 | SiC単結晶及びその製造方法 |
US9732437B2 (en) | 2014-09-09 | 2017-08-15 | Toyota Jidosha Kabushiki Kaisha | SiC single crystal and method for producing same |
JP2016172677A (ja) | 2015-03-18 | 2016-09-29 | 国立研究開発法人産業技術総合研究所 | 炭化珪素単結晶及びその製造方法 |
JP2016172674A (ja) * | 2015-03-18 | 2016-09-29 | 国立研究開発法人産業技術総合研究所 | 炭化珪素単結晶及びそれを用いた電力制御用デバイス基板 |
JP6287941B2 (ja) | 2015-04-20 | 2018-03-07 | トヨタ自動車株式会社 | p型SiC単結晶 |
JP2017031034A (ja) | 2015-08-06 | 2017-02-09 | 信越化学工業株式会社 | SiC単結晶の製造方法 |
WO2017073984A1 (ko) * | 2015-10-26 | 2017-05-04 | 주식회사 엘지화학 | 실리콘계 용융 조성물 및 이를 이용한 sic 단결정의 제조 방법 |
KR102022693B1 (ko) | 2016-03-03 | 2019-09-18 | 주식회사 엘지화학 | 탄화규소 단결정의 제조 장치 |
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