JP6760721B2 - バナジウムでドープしたＳｉＣ塊状単結晶の製造方法及びバナジウムでドープしたＳｉＣ基板 - Google Patents

バナジウムでドープしたＳｉＣ塊状単結晶の製造方法及びバナジウムでドープしたＳｉＣ基板 Download PDF

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JP6760721B2
JP6760721B2 JP2015176543A JP2015176543A JP6760721B2 JP 6760721 B2 JP6760721 B2 JP 6760721B2 JP 2015176543 A JP2015176543 A JP 2015176543A JP 2015176543 A JP2015176543 A JP 2015176543A JP 6760721 B2 JP6760721 B2 JP 6760721B2
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sic
growth
vanadium
crystal
single crystal
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JP2016056088A (ja
JP2016056088A5 (enExample
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ミュラー ラルフ
ミュラー ラルフ
シュトックマイアー マティアス
シュトックマイアー マティアス
フォーゲル ミヒァエル
フォーゲル ミヒァエル
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エスアイクリスタル ゲゼルシャフト ミット ベシュレンクテル ハフツング
エスアイクリスタル ゲゼルシャフト ミット ベシュレンクテル ハフツング
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2015176543A 2014-09-09 2015-09-08 バナジウムでドープしたＳｉＣ塊状単結晶の製造方法及びバナジウムでドープしたＳｉＣ基板 Active JP6760721B2 (ja)

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DE102014217956.4 2014-09-09
DE102014217956.4A DE102014217956B4 (de) 2014-09-09 2014-09-09 Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat

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JP2016056088A JP2016056088A (ja) 2016-04-21
JP2016056088A5 JP2016056088A5 (enExample) 2018-06-07
JP6760721B2 true JP6760721B2 (ja) 2020-09-23

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US (1) US9732438B2 (enExample)
JP (1) JP6760721B2 (enExample)
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Families Citing this family (13)

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Publication number Priority date Publication date Assignee Title
US20180265970A1 (en) * 2017-03-14 2018-09-20 Eastman Kodak Company Porous gas-bearing backer
EP3382068B1 (en) 2017-03-29 2022-05-18 SiCrystal GmbH Silicon carbide substrate and method of growing sic single crystal boules
KR102381395B1 (ko) * 2017-09-18 2022-04-01 한국전기연구원 절연 또는 반절연 ６Ｈ-ＳｉＣ 기판에 구현된 ＳｉＣ 반도체 소자 및 그 제조 방법
JP7258273B2 (ja) * 2018-09-06 2023-04-17 株式会社レゾナック ＳｉＣ単結晶の製造方法及び被覆部材
KR102276450B1 (ko) 2019-10-29 2021-07-12 에스케이씨 주식회사 탄화규소 잉곳의 제조방법, 탄화규소 웨이퍼의 제조방법 및 이의 성장 시스템
TWI723650B (zh) * 2019-11-26 2021-04-01 國家中山科學研究院 一種均勻碳化矽晶體製備裝置
US11072871B2 (en) 2019-12-20 2021-07-27 National Chung-Shan Institute Of Science And Technology Preparation apparatus for silicon carbide crystals comprising a circular cylinder, a doping tablet, and a plate
DE102020104226A1 (de) 2020-02-18 2021-08-19 Friedrich-Alexander-Universität Erlangen-Nürnberg Verfahren zur Herstellung eines Einkristalls in einem Wachstumstiegel
DE102020117661A1 (de) * 2020-07-03 2022-01-20 Friedrich-Alexander-Universität Erlangen-Nürnberg Kristallzüchtungsanlage zur Herstellung eines Einkristalls
TWI766776B (zh) * 2020-07-27 2022-06-01 環球晶圓股份有限公司 碳化矽晶碇及其製備方法
US20220251725A1 (en) * 2021-02-09 2022-08-11 National Chung Shan Institute Of Science And Technology Method of growing on-axis silicon carbide single crystal by regulating silicon carbide source material in size
WO2023283472A1 (en) * 2021-07-09 2023-01-12 Pallidus, Inc. Sic p-type, and low resistivity, crystals, boules, wafers and devices, and methods of making the same
WO2024095640A1 (ja) * 2022-10-31 2024-05-10 住友電気工業株式会社 炭化珪素基板、エピタキシャル基板、半導体装置の製造方法および炭化珪素基板の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0788274B2 (ja) * 1985-09-18 1995-09-27 三洋電機株式会社 ＳｉＣ単結晶の成長方法
JP2868328B2 (ja) * 1991-03-01 1999-03-10 新日本製鐵株式会社 大口径炭化珪素単結晶インゴットの作製方法および種結晶用炭化珪素単結晶
JPH0710697A (ja) * 1993-06-28 1995-01-13 Nisshin Steel Co Ltd 炭化ケイ素単結晶の製造装置
US5611955A (en) 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
US6396080B2 (en) 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
JP2005008472A (ja) * 2003-06-18 2005-01-13 Nippon Steel Corp 高品質４ｈ型炭化珪素単結晶、および単結晶ウェハ
JP5068423B2 (ja) 2004-10-13 2012-11-07 新日本製鐵株式会社 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法
US7608524B2 (en) 2005-04-19 2009-10-27 Ii-Vi Incorporated Method of and system for forming SiC crystals having spatially uniform doping impurities
DE102008063124B4 (de) 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat
DE102008063129B4 (de) 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat
JP5779171B2 (ja) * 2009-03-26 2015-09-16 トゥー‐シックス・インコーポレイテッド ＳｉＣ単結晶の昇華成長方法及び装置
JP2011102205A (ja) * 2009-11-10 2011-05-26 Sumitomo Osaka Cement Co Ltd α型炭化ケイ素粉体の粒径制御方法及び炭化ケイ素単結晶
US8377806B2 (en) * 2010-04-28 2013-02-19 Cree, Inc. Method for controlled growth of silicon carbide and structures produced by same
US20130153836A1 (en) 2010-09-02 2013-06-20 Bridgestone Corporation Method of producing silicon carbide single crystal, silicon carbide single crystal, and silicon carbide single crystal substrate
EP2664695B1 (en) * 2012-05-16 2015-07-15 SiCrystal AG Physical vapor transport growth system for simultaneously growing more than one SiC single crystal, and method of growing

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DE102014217956A1 (de) 2016-03-10
JP2016056088A (ja) 2016-04-21
US9732438B2 (en) 2017-08-15
US20160068994A1 (en) 2016-03-10
DE102014217956B4 (de) 2018-05-09

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