JP6757955B2 - ｎ型ＳｉＣ単結晶基板及びその製造方法、並びにＳｉＣエピタキシャルウェハ - Google Patents

ｎ型ＳｉＣ単結晶基板及びその製造方法、並びにＳｉＣエピタキシャルウェハ Download PDF

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Publication number
JP6757955B2
JP6757955B2 JP2016186907A JP2016186907A JP6757955B2 JP 6757955 B2 JP6757955 B2 JP 6757955B2 JP 2016186907 A JP2016186907 A JP 2016186907A JP 2016186907 A JP2016186907 A JP 2016186907A JP 6757955 B2 JP6757955 B2 JP 6757955B2
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single crystal
concentration
sic single
crystal substrate
sic
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Japanese (ja)
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JP2018052749A5 (OSRAM
JP2018052749A (ja
Inventor
数馬 江藤
数馬 江藤
裕政 周防
裕政 周防
智久 加藤
智久 加藤
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National Institute of Advanced Industrial Science and Technology AIST
Resonac Holdings Corp
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Showa Denko KK
National Institute of Advanced Industrial Science and Technology AIST
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Application filed by Showa Denko KK, National Institute of Advanced Industrial Science and Technology AIST filed Critical Showa Denko KK
Priority to JP2016186907A priority Critical patent/JP6757955B2/ja
Priority to CN201780057496.8A priority patent/CN109715867B/zh
Priority to PCT/JP2017/034499 priority patent/WO2018056438A1/ja
Priority to DE112017004799.4T priority patent/DE112017004799B4/de
Priority to US16/333,269 priority patent/US10892334B2/en
Publication of JP2018052749A publication Critical patent/JP2018052749A/ja
Publication of JP2018052749A5 publication Critical patent/JP2018052749A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2016186907A 2016-09-26 2016-09-26 ｎ型ＳｉＣ単結晶基板及びその製造方法、並びにＳｉＣエピタキシャルウェハ Active JP6757955B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016186907A JP6757955B2 (ja) 2016-09-26 2016-09-26 ｎ型ＳｉＣ単結晶基板及びその製造方法、並びにＳｉＣエピタキシャルウェハ
CN201780057496.8A CN109715867B (zh) 2016-09-26 2017-09-25 n型SiC单晶基板及其制造方法以及SiC外延晶片
PCT/JP2017/034499 WO2018056438A1 (ja) 2016-09-26 2017-09-25 ｎ型ＳｉＣ単結晶基板及びその製造方法、並びにＳｉＣエピタキシャルウェハ
DE112017004799.4T DE112017004799B4 (de) 2016-09-26 2017-09-25 n-Typ-SiC-Einkristallsubstrat, Verfahren zur Herstellung desselben und SiC-Epitaxiewafer
US16/333,269 US10892334B2 (en) 2016-09-26 2017-09-25 n-Type SiC single crystal substrate, method for producing same and SiC epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016186907A JP6757955B2 (ja) 2016-09-26 2016-09-26 ｎ型ＳｉＣ単結晶基板及びその製造方法、並びにＳｉＣエピタキシャルウェハ

Publications (3)

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JP2018052749A JP2018052749A (ja) 2018-04-05
JP2018052749A5 JP2018052749A5 (OSRAM) 2019-05-30
JP6757955B2 true JP6757955B2 (ja) 2020-09-23

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US (1) US10892334B2 (OSRAM)
JP (1) JP6757955B2 (OSRAM)
CN (1) CN109715867B (OSRAM)
DE (1) DE112017004799B4 (OSRAM)
WO (1) WO2018056438A1 (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6806554B2 (ja) * 2016-12-19 2021-01-06 富士電機株式会社 半導体装置の検査方法
CN113169123B (zh) 2019-05-16 2025-03-07 富士电机株式会社 半导体装置及半导体装置的制造方法
WO2021025085A1 (ja) * 2019-08-06 2021-02-11 学校法人関西学院 ＳｉＣ基板、ＳｉＣエピタキシャル基板、ＳｉＣインゴット及びこれらの製造方法
KR102340110B1 (ko) * 2019-10-29 2021-12-17 주식회사 쎄닉 탄화규소 잉곳, 웨이퍼 및 이의 제조방법
WO2021153351A1 (ja) * 2020-01-29 2021-08-05 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
TWI766775B (zh) * 2020-07-27 2022-06-01 環球晶圓股份有限公司 碳化矽晶圓的製造方法以及半導體結構
JP7285890B2 (ja) 2021-08-04 2023-06-02 株式会社レゾナック ＳｉＣエピタキシャルウェハ及びＳｉＣエピタキシャルウェハの製造方法
JP7183358B1 (ja) * 2021-08-04 2022-12-05 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びＳｉＣエピタキシャルウェハの製造方法
CN113913930A (zh) * 2021-09-30 2022-01-11 瀚天天成电子科技（厦门）有限公司 一种具有n型缓冲层的外延结构及其制备方法
JP2025072804A (ja) * 2023-10-25 2025-05-12 株式会社レゾナック ＳｉＣエピタキシャルウェハ

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020189536A1 (en) * 2001-06-15 2002-12-19 Bridgestone Corporation Silicon carbide single crystal and production thereof
JP4162923B2 (ja) * 2001-06-22 2008-10-08 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法
JP5068423B2 (ja) 2004-10-13 2012-11-07 新日本製鐵株式会社 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法
JP4964672B2 (ja) 2007-05-23 2012-07-04 新日本製鐵株式会社 低抵抗率炭化珪素単結晶基板
JP4469396B2 (ja) * 2008-01-15 2010-05-26 新日本製鐵株式会社 炭化珪素単結晶インゴット、これから得られる基板及びエピタキシャルウェハ
JP4697235B2 (ja) * 2008-01-29 2011-06-08 トヨタ自動車株式会社 ｐ型ＳｉＣ半導体単結晶の製造方法およびそれにより製造されたｐ型ＳｉＣ半導体単結晶
JP2010064918A (ja) * 2008-09-10 2010-03-25 Showa Denko Kk 炭化珪素単結晶の製造方法、炭化珪素単結晶ウェーハ及び炭化珪素単結晶半導体パワーデバイス
US9228274B2 (en) 2008-12-08 2016-01-05 Ii-Vi Incorporated Axial gradient transport growth process and apparatus utilizing resistive heating
JP2011093771A (ja) 2009-11-02 2011-05-12 Bridgestone Corp 炭化ケイ素単結晶、炭化ケイ素単結晶基板、および炭化ケイ素単結晶の製造方法
JP5304713B2 (ja) * 2010-04-07 2013-10-02 新日鐵住金株式会社 炭化珪素単結晶基板、炭化珪素エピタキシャルウェハ、及び薄膜エピタキシャルウェハ
JP5839315B2 (ja) * 2010-07-30 2016-01-06 株式会社デンソー 炭化珪素単結晶およびその製造方法
JP2014187113A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 気相成長装置および気相成長方法
JP6152981B2 (ja) * 2013-08-02 2017-06-28 株式会社デンソー 炭化珪素単結晶
JP6082111B2 (ja) * 2014-02-27 2017-02-15 京セラ株式会社 炭化珪素の結晶のインゴット、炭化珪素のウェハ、炭化珪素の結晶のインゴットおよび炭化珪素のウェハの製造方法
JP2016186907A (ja) 2015-03-27 2016-10-27 三菱製紙株式会社 導電性材料の製造方法

Also Published As

Publication number Publication date
WO2018056438A1 (ja) 2018-03-29
DE112017004799B4 (de) 2022-06-30
US20190252504A1 (en) 2019-08-15
CN109715867B (zh) 2021-06-22
CN109715867A (zh) 2019-05-03
US10892334B2 (en) 2021-01-12
JP2018052749A (ja) 2018-04-05
DE112017004799T5 (de) 2019-09-05

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