JP6755911B2 - 半導体素子パッケージ - Google Patents

半導体素子パッケージ Download PDF

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Publication number
JP6755911B2
JP6755911B2 JP2018165079A JP2018165079A JP6755911B2 JP 6755911 B2 JP6755911 B2 JP 6755911B2 JP 2018165079 A JP2018165079 A JP 2018165079A JP 2018165079 A JP2018165079 A JP 2018165079A JP 6755911 B2 JP6755911 B2 JP 6755911B2
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Japan
Prior art keywords
metal body
groove
insulating member
cavity
region
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JP2018165079A
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English (en)
Japanese (ja)
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JP2019047123A5 (enExample
JP2019047123A (ja
Inventor
イ，コウン
カン，ヒソン
キム，ガヨン
イ，ヨンジュネ
チン，ミンジ
ユン，ジェジュン
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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Publication of JP2019047123A publication Critical patent/JP2019047123A/ja
Publication of JP2019047123A5 publication Critical patent/JP2019047123A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Landscapes

  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP2018165079A 2017-09-05 2018-09-04 半導体素子パッケージ Active JP6755911B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2017-0113439 2017-09-05
KR20170113439 2017-09-05
KR10-2018-0101576 2018-08-28
KR1020180101576A KR102641336B1 (ko) 2017-09-05 2018-08-28 반도체 소자 패키지

Publications (3)

Publication Number Publication Date
JP2019047123A JP2019047123A (ja) 2019-03-22
JP2019047123A5 JP2019047123A5 (enExample) 2019-06-13
JP6755911B2 true JP6755911B2 (ja) 2020-09-16

Family

ID=65761758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018165079A Active JP6755911B2 (ja) 2017-09-05 2018-09-04 半導体素子パッケージ

Country Status (5)

Country Link
US (1) US11335843B2 (enExample)
JP (1) JP6755911B2 (enExample)
KR (1) KR102641336B1 (enExample)
CN (1) CN109427946B (enExample)
TW (1) TWI802587B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102650690B1 (ko) * 2018-10-23 2024-03-25 주식회사 루멘스 Uv led 패키지
KR102747406B1 (ko) * 2019-05-27 2024-12-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 패키지
JP7173347B2 (ja) * 2019-07-25 2022-11-16 株式会社大真空 発光装置のリッド材、リッド材の製造方法および発光装置
JP7370274B2 (ja) * 2020-02-18 2023-10-27 日機装株式会社 半導体パッケージ及び半導体発光装置
JP7450466B2 (ja) * 2020-06-22 2024-03-15 スタンレー電気株式会社 発光装置及び発光装置の製造方法
US12181741B2 (en) * 2021-06-21 2024-12-31 Saint-Gobain Glass France Segmented multilayer film with electrically controllable optical properties

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4003866B2 (ja) * 2001-12-04 2007-11-07 シチズン電子株式会社 表面実装型発光ダイオード及びその製造方法
JP2003304000A (ja) 2002-04-08 2003-10-24 Citizen Electronics Co Ltd 発光ダイオード用パッケージの製造方法
KR100593943B1 (ko) 2005-04-30 2006-06-30 삼성전기주식회사 발광 다이오드 패키지의 제조 방법
US8044418B2 (en) * 2006-07-13 2011-10-25 Cree, Inc. Leadframe-based packages for solid state light emitting devices
JP4205135B2 (ja) 2007-03-13 2009-01-07 シャープ株式会社 半導体発光装置、半導体発光装置用多連リードフレーム
JP5326705B2 (ja) 2009-03-17 2013-10-30 日亜化学工業株式会社 発光装置
JP5367668B2 (ja) * 2009-11-17 2013-12-11 スタンレー電気株式会社 発光装置およびその製造方法
KR101157530B1 (ko) 2009-12-16 2012-06-22 인탑스엘이디 주식회사 발광다이오드 패키지 및 그 제조방법
JP5383611B2 (ja) 2010-01-29 2014-01-08 株式会社東芝 Ｌｅｄパッケージ
TW201250964A (en) * 2011-01-27 2012-12-16 Dainippon Printing Co Ltd Resin-attached lead frame, method for manufacturing same, and lead frame
KR101852388B1 (ko) 2011-04-28 2018-04-26 엘지이노텍 주식회사 발광 소자 패키지
CN103078040B (zh) 2011-08-22 2016-12-21 Lg伊诺特有限公司 发光器件封装件和光装置
KR101853067B1 (ko) * 2011-08-26 2018-04-27 엘지이노텍 주식회사 발광 소자 패키지
JP6015231B2 (ja) 2011-08-26 2016-10-26 大日本印刷株式会社 Ｌｅｄ素子搭載用基板及びその製造方法、並びにｌｅｄ素子搭載用基板を用いた半導体装置
US9263658B2 (en) * 2012-03-05 2016-02-16 Seoul Viosys Co., Ltd. Light-emitting device and method of manufacturing the same
KR101400271B1 (ko) 2012-08-03 2014-05-28 (주)포인트엔지니어링 광디바이스 제조 방법 및 이에 의해 제조된 광디바이스
KR101373710B1 (ko) * 2012-12-12 2014-03-13 (주)포인트엔지니어링 엘이디 금속기판 패키지 및 그 제조방법
CN104103734B (zh) * 2013-04-02 2017-03-01 展晶科技(深圳)有限公司 发光二极管封装结构
KR20150001268A (ko) 2013-06-27 2015-01-06 엘지이노텍 주식회사 발광 소자 패키지
US9583689B2 (en) * 2013-07-12 2017-02-28 Lite-On Opto Technology (Changzhou) Co., Ltd. LED package
KR101541035B1 (ko) 2013-08-16 2015-08-03 (주)포인트엔지니어링 절단에 따른 버를 방지하는 칩원판 및 이를 제조하는 방법
DE102014102810A1 (de) 2014-03-04 2015-09-10 Osram Opto Semiconductors Gmbh Herstellung optoelektronischer Bauelemente
DE102014103034A1 (de) 2014-03-07 2015-09-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
US10014456B2 (en) * 2014-03-25 2018-07-03 3M Innovative Properties Company Flexible circuits with coplanar conductive features and methods of making same
JP6185415B2 (ja) 2014-03-27 2017-08-23 株式会社東芝 半導体発光装置
EP2950358B1 (en) * 2014-05-29 2021-11-17 Suzhou Lekin Semiconductor Co., Ltd. Light emitting device package
CN104037316B (zh) 2014-06-19 2017-06-20 鸿利智汇集团股份有限公司 一种led无机封装支架及其封装方法
EP3179525B1 (en) 2014-08-05 2018-10-24 Citizen Electronics Co., Ltd Semiconductor device and method for producing same
KR20160038568A (ko) * 2014-09-30 2016-04-07 (주)포인트엔지니어링 복수의 곡면 캐비티를 포함하는 칩 기판
KR101668353B1 (ko) * 2014-11-03 2016-10-21 (주)포인트엔지니어링 칩 기판 및 칩 패키지 모듈
JP6765804B2 (ja) * 2014-11-28 2020-10-07 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
US10211378B2 (en) * 2016-01-29 2019-02-19 Nichia Corporation Light emitting device and method for manufacturing same
US9893250B1 (en) * 2016-12-16 2018-02-13 Nichia Corporation Light emitting device having silicone resin-based sealing member

Also Published As

Publication number Publication date
CN109427946A (zh) 2019-03-05
KR20190026581A (ko) 2019-03-13
TWI802587B (zh) 2023-05-21
US20190074422A1 (en) 2019-03-07
CN109427946B (zh) 2022-05-20
TW201921728A (zh) 2019-06-01
US11335843B2 (en) 2022-05-17
JP2019047123A (ja) 2019-03-22
KR102641336B1 (ko) 2024-02-28

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